A microelectronic assembly comprises a first microelectronic component; a second microelectronic component under an area of the first microelectronic component and coupled to the first component through first interconnect structures within a central region of the area, and second interconnect structures within a peripheral region of the area, adjacent to the central region. A heterogenous dielectric surface on the first or second component or both and within a gap between the first and second components has a first surface composition within the central region and at least a second surface composition within the peripheral region.

The present disclosure relates to a double-sided integrated circuit (IC) module, which includes an exposed semiconductor die on a bottom side. A double-sided IC module includes a module substrate with a top side and a bottom side. Electronic components are mounted to each of the top side and the bottom side. Generally, the electronic components are encapsulated by a mold compound. In an exemplary aspect, a portion of the mold compound on the bottom side of the module substrate is removed, exposing a semiconductor die surface of at least one of the electronic components.

A flip-chip bonding-based antenna packaging structure and its manufacturing method are provided. The flip-chip bonding-based antenna packaging structure includes a lead frame structure and a redistribution structure disposed above the lead frame structure. The redistribution structure includes a first surface and a second surface. The lead frame structure is disposed on the redistribution structure and includes a metal member, a first active element, and a passive element. The metal member includes a base portion, a first supporting portion on the base portion, and an extension portion adjacent to the first supporting portion. The extension portion extends from the base portion, and the first supporting portion is parallel to the extension portion. The first active element is disposed between the first supporting portion and the first surface. The passive element is disposed on the second surface and is electrically connected to the first active element.

Aspects of the disclosure advantageously provide one or more methods of improving microelectronic production by mitigating obstructions via strategic placement of wire bond stud bumps. A microelectronic assembly and a method of producing the same are provided. The method includes placing a set of stud bumps on a substrate defining a boundary of a location for placement of a component, wherein the set of stud bumps comprises a first stud bump and a second stud bump, the first stud bump comprising a greater amount of wire bonding material than the second stud bump; placing the component at the location on the substrate via a layer of a binding material; and forming a wire bond between the component and the first stud bump. In one or more embodiments, a microelectronic assembly is produced in accordance with the method described above.

Various aspects of the present disclosure generally relate to a bonding pad configuration. A device includes a die including multiple bonding pads, pad configuration circuitry, and control circuitry. The pad configuration circuitry is configured to, based on a routing configuration, selectively connect multiple nodes of first circuitry to a first set of bonding pads of the multiple bonding pads. The control circuitry is connected to the pad configuration circuitry and configured to obtain the routing configuration.

A wafer-to-wafer bonding structure includes a first wafer having a first bonding layer thereon, a first main pattern region, a first scribe lane surrounding the first main pattern region, and a first alignment cavity disposed in the first bonding layer within the first main pattern region; and a second wafer having a second bonding layer bonded to the first bonding layer, a second main pattern region, a second scribe lane surrounding the second main pattern region, and a second alignment cavity disposed in the second bonding layer within the second main pattern region.

A package structure is provided. The package structure includes a dielectric structure and an antenna structure disposed in the dielectric structure. The package structure also includes a semiconductor device disposed on the dielectric structure and a protective layer surrounding the semiconductor device. The package structure further includes a conductive feature electrically connecting the semiconductor device and the antenna structure. A portion of the antenna structure is between the conductive feature and the dielectric structure.

A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

Embodiments of the present disclosure relate to a semiconductor package, a method of forming the package and an electronic device. For example, the semiconductor package may comprise a first substrate assembly comprising a first surface and a second surface opposite the first surface. The semiconductor package may also comprise one or more chips connected or coupled to the first surface of the first substrate assembly by a first thermally and electrically conductive connecting material. In addition, the semiconductor package further comprises a second substrate assembly comprising a third surface and a fourth surface opposite the third surface, the third surface and the first surface being arranged to face each other, and the third surface being connected to one or more chips by a second thermally and electrically conductive connecting material. At least one of the first surface and the third surface is shaped to have a stepped pattern to match a surface of the one or more chips. Embodiments of the present disclosure may at least simplify the double-sided heat dissipation structure and improve the heat dissipation effect of the chip.

A three-dimensional semiconductor memory device may include a substrate, a stack structure including interlayer dielectric layers and gate electrodes alternately and repeatedly stacked on the substrate, and vertical channel structures provided in vertical channel holes penetrating the stack structure. Each of the vertical channel structures may include a data storage pattern covering an inner side surface of each of the vertical channel holes, a vertical semiconductor pattern covering the data storage pattern, and a gapfill insulating pattern filling an internal space enclosed by the vertical semiconductor pattern. The vertical semiconductor pattern may have a first surface which is in contact with the gapfill insulating pattern, and a second surface which is in contact with the data storage pattern. A germanium concentration in the vertical semiconductor pattern may decrease in a direction from the first surface toward the second surface.