A semiconductor device includes: an insulated circuit substrate including a base plate, a resin layer on the base plate, and a circuit pattern on the resin layer; a semiconductor chip that is rectangular and is bonded to the circuit pattern such that a side edge of the semiconductor chip is spaced inwardly from an outer peripheral edge of the circuit pattern by a predetermined distance; a case on the resin layer and surrounds the circuit pattern and the semiconductor chip; and a sealing material that covers the insulated circuit substrate and semiconductor chip and is surrounded by the case. The predetermined distance and thickness of the circuit pattern are greater than or equal to 0.1 of a length of one side of the semiconductor chip. A peripheral region of the case and a peripheral region of the resin layer are connected to each other via an adhesive layer.

Provided herein include various examples of an apparatus, a sensor system and examples of a method for manufacturing aspects of an apparatus, a sensor system. The method may include forming bumps on a surface of one or more electrical contacts, where the one or more electrical contacts are accessible on an upper surface of a die, where the die is oriented on a substrate, and where the electrical contacts comprise bonding pads. The method may also include coupling one or more additional electrical contacts to the one or more electrical contacts, where the coupling comprises wire-bonding each additional electrical contact of the additional electrical contacts to one of the one or more electrical contacts accessible on the upper surface of the die, via a portion of the bumps on the surface of the one or more electrical contacts, thereby forming wire-bonded connections.

The present disclosure is directed to semiconductor packages manufactured utilizing a leadframe with varying thicknesses. The leadframe with varying thicknesses has a reduced likelihood of deformation while being handled during the manufacturing of the semiconductor packages as well as when being handled during a shipping process. The method of manufacturing is not required to utilize a leadframe tape based on the leadframe with varying thicknesses. This reduces the overall manufacturing costs of the semiconductor packages due to the reduced materials and steps in manufacturing the semiconductor packages as compared to a method that utilizes a leadframe tape to support a leadframe. The semiconductor packages may include leads of varying thicknesses formed by utilizing the leadframe of varying thicknesses to manufacture the semiconductor packages.

A semiconductor device includes: a first lead including a base portion; a semiconductor element mounted on a first side of the base portion in the thickness direction and including a first electrode; a second lead spaced apart from the base portion in a first direction perpendicular to the thickness direction; a first conductive member electrically bonded to the first electrode and the second lead; and a sealing resin. The first conductive member includes a first portion bonded to the first electrode via a conductive first bonding layer. The first portion includes a first surface and a second surface respectively facing the first side and a second side in the thickness direction. The first portion includes a plurality of first recesses that are recessed from the first surface and a plurality of second recesses that are recessed from the second surface.

A semiconductor device of an embodiment includes a main body which has a substrate and a chip mounted on a device surface facing one side in a first direction among outer surfaces of the substrate. The semiconductor device includes a housing which accommodates the main body. The semiconductor device includes a heat transfer pin. The housing has a lid member that faces the device surface. The heat transfer pin is held by the lid member and extends from the lid member toward the chip.

A semiconductor device, including: a semiconductor substrate having a main surface; an interlayer insulating film provided on the main surface of the semiconductor substrate; a contact hole penetrating through the interlayer insulating film to reach the semiconductor substrate; a plug electrode embedded in the contact hole; a first barrier metal provided on the interlayer insulating film, the first barrier metal being apart from the plug electrode; and a front electrode provided on the first barrier metal and the plug electrode.

A semiconductor device includes a substrate having a semiconductor chip mounted thereon, a heat dissipation plate having a front surface on which the substrate is disposed, a case including a side wall disposed on the front surface of the heat dissipation plate so as to surround a housing space accommodating the substrate therein together with the heat dissipation plate and a lid disposed on the side wall to cover the housing space, and a sealing member filling the housing space to seal the substrate. The lid has a through hole and a projection (or a groove) provided on the inner surface of the lid, configured to surround the through hole so as not to contact the sealing member such that the projection forms a plurality of circumferential patterns around the through hole in plan view.

A semiconductor package includes a package substrate including an upper pad on an upper surface of the package substrate, a first chip structure including a plurality of first chips offset-stacked in a first direction, a controller chip on the package substrate and apart from the first chip structure in a horizontal direction, a chip connection bump between the package substrate and the controller chip, and an underfill material layer covering the chip connection bump, wherein a side surface of the underfill material layer is perpendicular to the package substrate.

A semiconductor device includes: a first terminal and a second terminal; a first conductive member that is electrically connected to the first terminal; a semiconductor chip that is provided on the first conductive member; a second conductive member that is provided on the semiconductor chip and electrically connected to the second terminal; a first insulator that is provided on the second conductive member and covers the semiconductor chip; a conductive plate that is provided on at least a part of the first insulator; and a post that is electrically connected to the conductive plate and extends along a side surface of the first insulator.

The invention relates to a substrate arrangement, to a method for producing an electronic assembly and to an electronic assembly. The substrate arrangement comprises (a) a metal foil comprising an upper side and an underside, (b) a silver layer arranged on the underside of the metal foil, and (c) a silver sinter layer arranged on the silver layer, wherein the silver layer has a thickness d(Ag) in the range of 20-1500 nm.