An assembly comprising a substrate with a first and second bond pad at a top surface; and a semiconductor die with a lower surface coupled to the top surface, an upper surface with a third and fourth bond pad thereat, and a side surface perpendicular to the upper and lower surfaces. The first bond pad can be a first distance, the second bond pad can be a second distance, the third bond pad can be a third distance, and the fourth bond pad can be a fourth distance, respectively, from the side surface. The first and third distances summed can be the same as the second and fourth distances summed. A first wire can extend between the first and third bond pads, and a second wire can extend between the second and fourth bond pads.

Provided is a metal component that is used for manufacturing a semiconductor device, the metal component including a substrate having a conductivity; and a noble metal plating layer formed on all or part of a surface of the substrate, wherein the noble metal plating layer has a lumpy protrusion on a surface of the noble metal plating layer.