A power semiconductor module arrangement comprises a substrate comprising a dielectric insulation layer, and a first metallization layer attached to the dielectric insulation layer, at least one semiconductor body mounted on the first metallization layer, and a first layer comprising an encapsulant, the first layer being arranged on the substrate and covering the first metallization layer the at least one semiconductor body, wherein the first layer is configured to release liquid or oil at temperatures exceeding a defined threshold temperature.

An electronic device includes: an insulating substrate including an obverse surface facing a thickness direction; a wiring portion formed on the substrate obverse surface and made of a conductive material; a lead frame arranged on the substrate obverse surface; a first and a second semiconductor elements electrically connected to the lead frame; and a first control unit electrically connected to the wiring portion to operate the first semiconductor element as a first upper arm and operate the second semiconductor element as a first lower arm. The lead frame includes a first pad portion to which the first semiconductor element is joined and a second pad portion to which the second semiconductor element is joined. The first and second pad portions are spaced apart from the wiring portion and arranged in a first direction with a first separation region sandwiched therebetween, where the first direction is orthogonal to the thickness direction. The first control unit is spaced apart from the lead frame as viewed in the thickness direction, while overlapping with the first separation region as viewed in a second direction orthogonal to the thickness direction and the first direction.

A temperature-sensor assembly comprising at least one temperature sensor and at least one supply line, wherein the temperature sensor has at least one electrically insulating substrate with an upper side and an underside, wherein a temperature-sensor structure with at least one sensor-contact surface is formed at least on parts of the upper side, wherein the supply line has at least one supply-line contact surface, wherein the supply-line contact surface is connected to the sensor-contact surface at least in part by means of a first sinter layer.

A resin enclosure includes: an inner wall portion from a wall surface defining the space to a side surface of the lead terminal close to the space; and a covering portion that covers at least a part of a top surface of a first portion of the lead terminal.

In some embodiments, a semiconductor package includes a package substrate that includes a first surface, a second surface that is opposite to the first surface, first substrate pads disposed on the first surface in a first row, and second substrate pads disposed on the first surface in a second row. The semiconductor package further includes a first semiconductor chip that includes first chip pads, lower bonding wires configured to respectively couple the first chip pads and the first substrate pads, a second semiconductor chip that includes second chip pads, upper bonding wires configured to respectively couple the second chip pads and the second substrate pads, and an encapsulant disposed on the package substrate and covering the first semiconductor chip and the second semiconductor chip. The lower bonding wires are ball-bonded to the first chip pads and stich-bonded to the first substrate pads.

A semiconductor package includes a package substrate including first and second power P-pads and first and second signal P-pads, a lower layer chip including first and second power L-pads and first and second signal L-pads, an upper layer chip offset from the lower layer chip and including first and second power U-pads and first and second signal U-pads. The first power and signal P-pads are alternatingly stacked, the first power and signal L-pads are alternatingly stacked, and the first power and signal U-pads are alternatingly stacked. The second power and signal P-pads are alternatingly stacked, the second power and signal L-pads are alternatingly stacked, and the second power and signal U-pads are alternatingly stacked. Bonding wires connect the first and second power U-pads, the first and second power L-pads, the second power U-pads and P-pads, and the second signal U-pads and P-pads.

A semiconductor device includes a substrate having a first surface, a second surface, and an opening; a semiconductor device layer having a third surface and a fourth surface; a heat transfer member; source electrodes disposed on a fourth surface; and electrically conductive vias that penetrate the semiconductor device layer and a diamond layer to electrically connect the source electrodes to a metal layer. The heat transfer member includes the diamond layer and the metal layer, the diamond layer covers a bottom surface and an inner wall surface of the opening, and the metal layer is disposed on the diamond layer.

A recording element unit includes a first electrode pad, a second electrode pad, and a wire for electrically connecting the first electrode pad and the second electrode pad. The wire has a plurality of bending points at which the wire is bent in the direction of extension of the wire between a first connection point and a second connection point. The plurality of bending points include a first bending point at a height from the first connection point of at least 100 m and not more than 200 m, a second bending point at a distance from the first bending point in the horizontal direction of at least 100 m and not more than 270 m, and a third bending point at a distance from the intermediate point between the first electrode pad and the second electrode pad in the horizontal direction of within 150 m.

A switching component configured to switch an electrical signal, the switching component includes a substrate bearing several elementary components each ensuring the switching of the electrical signal, a baseplate onto which the substrate is fixed, the baseplate being configured to discharge heat emitted in the switchings of the switching component, two electrical conductors each connected to one of the elementary components and respectively ensuring the input and the output of the elementary component concerned for the signal (I.sub.C) to be switched, a magnetic core produced in a ferromagnetic material, the magnetic core surrounding the elementary component concerned without surrounding others of the elementary components and being disposed in the component in such a way that a displacement current between the surrounded elementary component and the baseplate induces a magnetic induction in the magnetic core, and in such a way that the path followed by a conduction current of the electrical signal switched by the component does not form a turn around the magnetic core.

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.