In some examples, a method for manufacturing a semiconductor package comprises coupling first and second semiconductor dies to a metal frame; covering the first and second semiconductor dies and the metal frame with a mold compound; coupling first and second passive components to the first and second semiconductor dies, the first and second passive components on an external surface of the mold compound; sawing through a portion of the metal frame from a first direction to form a first vertical surface of the metal frame, the first vertical surface having a first roughness due to the sawing; and laser cutting through the mold compound and a remainder of the metal frame from a second direction opposing the first direction to form a second vertical surface on the metal frame and a third vertical surface on the mold compound, the second vertical surface having a second roughness due to the laser cutting and the third vertical surface having a third roughness due to the laser cutting.

A semiconductor package includes a metallic substrate, the metallic substrate including a roughened surface, a semiconductor die including bond pads, and an adhesive between the roughened surface of a topside of the metallic substrate and the semiconductor die, therein bonding the semiconductor die to the metallic substrate. The adhesive includes a resin. The metallic substrate further includes a groove about a perimeter of the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic substrate. The groove straddles the topside and a sidewall of the metallic substrate.

A method comprises: covering at least part of the integrated circuit with a material, the material including an opening that penetrates through the material; and forming a layer of nanoparticles on at least part of an internal wall of the opening and over at least part of the integrated circuit.

A power module is provided. The power module includes a first lead frame, a first die, a substrate, a second lead frame, and a second die. The first lead frame has a first part and a second part. The first die is arranged on top of the first part of the first lead frame. A first power device is formed on the first die. The substrate is arranged on top of the second part of the first lead frame. The second lead frame is arranged on top of the substrate. The second die is arranged on top of the second lead frame. A first control circuit is formed on the second die, and the first control circuit is configured to control the first power device.

A semiconductor device, a semiconductor package including such a semiconductor device and a method of manufacturing such a semiconductor package are presented. The semiconductor device includes a die and a leadframe. The semiconductor device further includes a wire-bond interconnect structure including one or more pairs of wires. Herein, a pair of wires includes two wires that are bonded together at one end at the die and that are bonded together on the other end at the leadframe.

A semiconductor device includes a conductive support member with first and second die pads, a first semiconductor element on the first die pad, a second semiconductor element on the second die pad for forming a first output-side circuit, and a sealing resin. The first semiconductor element includes a circuit part forming an input-side circuit, and an insulating part that transmits a signal between the input-side and the first output-side circuits, while providing electrical insulation between the input-side and the first output-side circuits. The sealing resin includes first and second side faces spaced apart in an x direction and a third side face perpendicular to a y direction. The conductive support member includes input-side terminals protruding from the first side face and first output-side terminals protruding from the second side face. The conductive support member is not exposed on the third side face.