A substrate processing device includes a platen, a polishing pad disposed on the platen, a first rotating body, a second rotating body spaced apart from the first rotating body, a caterpillar module disposed on a portion of the polishing pad and engaged with the first rotating body and the second rotating body, and a temperature controller thermally connected to the caterpillar module.

A temperature measurement method includes: a radiation temperature measurement step for detecting a brightness temperature of a semiconductor wafer from obliquely below the semiconductor wafer; an input parameter calculation step for calculating at least two input parameters from the brightness temperature detected in the radiation temperature measurement step, the at least two input parameters including a first input parameter corresponding to an emissivity ratio of the semiconductor wafer and a second input parameter corresponding to a temperature of the semiconductor wafer; an output parameter estimation step for estimating an output parameter from the first input parameter and the second input parameter; and a temperature calculation step for calculating the temperature of the semiconductor wafer from the output parameter estimated in the output parameter estimation step and the brightness temperature detected in the radiation temperature measurement step.

The present application discloses a processing furnace comprising a furnace chamber; at least one infrared temperature measurement device; at least one calibration device comprising a black body module connected to the detection field of view of the corresponding infrared temperature measurement device; a controller; wherein the infrared temperature measurement device is configured to be capable of detecting the temperature of the black body module in the corresponding calibration device and obtaining calibration temperature data, and the controller is configured to calibrate the infrared temperature measurement device according to the standard temperature data and the calibration temperature data.

Various embodiments of wet processing systems, chemical supply systems and methods are provided herein to quickly and efficiently adjust a temperature of at least one processing liquid provided to a semiconductor substrate during a wet process. In the disclosed embodiments, processing liquid(s) flow through the chemical supply system at or near room temperature and the temperature of the processing liquid(s) is adjusted at or near the location(s) at which the processing liquid(s) are supplied to at least one surface of a semiconductor substrate (e.g., at or near the point of use) by supplying a variety of heated and/or cooled fluids to the processing liquid(s).

Disclosed herein are a warpage control method and system for warpage control included in a processing chamber. The warpage control method includes heating a substrate by a heating assembly comprising a plurality of independently controllable heating zones, measuring a backside temperature of a susceptor based on radiation at a first wavelength, measuring a topside temperature of the substrate based on radiation at a second wavelength, measuring a curvature of the substrate based on radiation at a third wavelength, and controlling the heating assembly based on the backside temperature, the topside temperature, and the curvature. The warpage control system includes a first thermal sensor and an warp sensor disposed above a substrate, a second thermal sensor disposed below the substrate, a heating assembly, and a controller coupled with the heating assembly, the first thermal sensor, the second thermal sensor, and the warp sensor for controlling the warpage of the substrate.

Disclosed herein are a processing chamber and a method for processing a SiC substrate. The processing chamber includes a gas showerhead; a susceptor disposed below the gas showerhead, the gas showerhead configured to flow a process gas toward the susceptor; a protective region disposed below the susceptor; and a heating assembly having a front side facing directly a backside of the susceptor. The heat assembly further includes a plurality of lamps. Both the backside of the susceptor and the front side of the heating assembly are exposed to the protective region. The lamps are also exposed to the protective region. The processing chamber includes a chamber body formed by a lid shielded by a lid liner, an upper side section shielded by a side liner, a lower side section, and a bottom section. The lid includes cooling channels. The upper side section also includes cooling channels.

A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.

A member for a semiconductor manufacturing apparatus includes a disk-shaped or annular ceramic heater, a metal base, an adhesive element bonding the metal base and the ceramic heater, an adhesive protective element disposed between the ceramic heater and the metal base to extend along a periphery of the adhesive element, and an anti-adhesion layer disposed between the adhesive element and the protective element, the anti-adhesion layer preventing adhesion between the adhesive element and the protective element.

A wafer placement table includes a ceramic base having a wafer placement surface on its top surface and incorporating an electrode, a cooling base provided on a bottom surface side of the ceramic base, and a refrigerant flow channel groove provided in the cooling base so as to open at a bottom surface of the cooling base.

A reactor system for use in semiconductor processing that makes use of a liquid source for deposition that needs to be maintained within a specific temperature control band or range. The reactor system includes a temperature control system that includes a heating and cooling apparatus for providing both heating and cooling of a vessel that stores the liquid source to maintain the liquid source within a desired temperature control band or range. In this manner, the heating and cooling apparatus may be used in a reactor system in which the vessel needs to be cooled, needs to be heated, or uses concurrent or alternating heating and cooling to provide enhanced control of the source temperature within a particular temperature control band.