Systems and methods are provided for adjusting a fluid dispenser for depositing drops of formable material. According to embodiments, a system obtains an image of a substrate including a film formed on the substrate by curing the formable material deposited by a first dispenser and a second dispenser. Intensity information is obtained for pixels of the image and a difference is determined between intensity values from a portion of the substrate on which the first dispenser deposited drops and intensity values from a portion on which the second dispenser deposited drops, the intensity values corresponding to a region of the substrate associated with a target thickness. Adjustments based on the intensity values are made to change a drop volume and a drop density for nozzles of the first dispenser and nozzles of the second dispenser.

A method for processing substrates includes subjecting each respective first substrate of a first plurality of substrates to a process that modifies a thickness of an outer layer of the respective first substrate, generating a plurality of groups of process parameter values; generating a plurality of removal profiles, training an artificial neural network by backpropagation using the plurality of groups of process parameter and plurality of removal profiles as training data where the artificial neural network has a plurality of input nodes to receive respective removal values from the removal profile and a plurality of output nodes to output control parameter values, for each respective second substrate of a second plurality of substrates determining a target removal profile, determining respective control parameter values to apply by applying the target removal profile to the input nodes, and subjecting each respective second substrate to the process using the respective control parameter values.

Provided is a plasma processing apparatus, a data analysis apparatus, and a semiconductor device manufacturing system, capable of assigning an appropriate chemical element or molecule on the basis of the features of a peak shape and capable of performing wavelength identification with high accuracy. The plasma processing apparatus includes: a processing chamber in which a sample is plasma-processed; a radio-frequency power supply that supplies radio-frequency power to generate plasmas; and a sample table on which the sample is placed, the plasma processing apparatus further including an analysis unit that identifies chemical elements or molecules in monitored plasmas on the basis of a match degree between a first spectral waveform and a second spectral waveform, the match degree being obtained by comparing the first spectral waveform with the second spectral waveform, the first and second spectral waveforms being spectral waveforms of the emission of the monitored plasmas, wherein the second spectral waveform is a spectral waveform multiplied by a weight coefficient corresponding to the chemical element or the molecule.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit horizontally maintaining a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photo-detector for detecting an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, and wherein the processor irradiates a first laser of a first output to the substrate, and sets a second output of a second laser for irradiating the substrate to heat the substrate, based on an energy of a first reflective light reflected from the substrate by the first laser detected from the photo-detector.

A substrate processing apparatus includes a chamber in which a substrate is disposed, an external air supply pipe connected to a first side of the chamber and extending into the chamber, a gas supply pipe disposed inside the external air supply pipe, a mesh filter disposed inside the external air supply pipe and between an end of the gas supply pipe and an end of the external air supply pipe, and a plurality of first discharge pipes connected to a second side of the chamber which is opposite to the first side and extending into the chamber.

The disclosure provides an optical signal detection system with improved spectral resolution and signal-to-noise that can be used for improved monitoring of semiconductor processes. The improved spectral resolution may be associated with improved spectral discrimination where narrow portions of spectral bandwidth are individually monitored. In one example, an optical signal detection system is provided that includes: (1) an optical interface configured to receive an optical signal, (2) a narrow bandpass filter configured to transmit a portion of the received optical signal, (3) an optical etalon in series with the narrow bandpass filter, configured to further filter the received optical signal, wherein the combination of a passband of the bandpass filter and a passband of the optical etalon is configured to provide an optical bandwidth of less than 1.0 nm for the optical signal, and (4) a multipixel optical sensor configured to essentially simultaneously collect the filtered optical signal.

An assembly for monitoring a semiconductor device under test comprising a mill configured to mill the device, a sensor configured to measure an electrical characteristic of the device, and a computer configured to determine the amount of strain in the device from the electrical characteristic when the mill is milling the device and detect an endpoint of milling at a circuit within the device. In use the endpoints of the milling process of the semiconductor device are detected measuring an electrical characteristic of the device with a sensor during milling determining the amount of strain in the device from the electrical characteristic and detecting an endpoint of the milling process within the device based on the amount of strain.

A substrate processing apparatus includes a substrate processing unit for processing a substrate by discharging a chemical liquid to the substrate; a chemical storage unit connected to the substrate processing unit by a chemical liquid supply line and a chemical liquid recovery line; and a liquid replenishment unit including an evaporation measurement member for measuring the amount of evaporation of water contained in the chemical liquid, and a water supply member for supplying water to the chemical liquid.

An apparatus diagnostic system for diagnosing conditions of a semiconductor manufacturing apparatus includes an apparatus diagnostic apparatus that outputs soundness indicators by a first algorithm with sensor data collected from the semiconductor manufacturing apparatus as an input to the first algorithm, outputs threshold spatial data under normal conditions of the semiconductor manufacturing apparatus by a second algorithm with the soundness indicators as an input to the second algorithm, and diagnoses conditions of the semiconductor manufacturing apparatus by a third algorithm with the soundness indicators and the threshold spatial data as an input to the third algorithm. The soundness indicators are indicators concerning a degree of soundness of conditions of the semiconductor manufacturing apparatus.

This method of cleaning a semiconductor wafer can reliably reduce the LPD count on the wafer surface. The method includes a first step of measuring a contact angle of a surface of a semiconductor wafer under conditions in which a volume of a droplet dripped on the surface differs, a second step of calculating a ratio of change in a measured value of the contact angle to change in the volume of the droplet based on a relationship between the volume of the droplet and the measured value of the contact angle under the conditions, a third step of determining whether pretreatment is necessary for the semiconductor wafer surface based on the ratio, a fourth step of performing the pretreatment on the semiconductor wafer surface according to the determining in the third step, and a fifth step of subsequently performing single-wafer spin cleaning on the semiconductor wafer surface.