An etching method according to the present invention includes after a step of creating a reduced pressure state, a step of supplying an etching gas containing hydrogen fluoride into a processing chamber and etching a coating film formed on a substrate, after the step of etching the coating film, a step of cleaning the substrate by supplying vapor into the processing chamber, and in the step of cleaning the substrate, a step of detecting SiF stretching vibration in the substrate by infrared spectroscopy, in which the step of cleaning the substrate ends when the SiF stretching vibration equal to or lower than a predetermined first threshold value is detected. Therefore, the time required for cleaning the substrate is prevented from being unnecessarily long.

A processing method including a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate; a step that takes an image of the end face of a process substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the process substrate; a step that calculates warp amount of the process substrate based on the obtained shape data; a step that forms a resist film on a surface of the process substrate; a step that determines the supply position from which an organic solvent is supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the process substrate.

A method of processing a substrate includes an etchant supplying operation of supplying an etchant to a substrate; a puddle operation of, by rotating the substrate at a first rotational speed, forming a liquid film of the etchant supplied to the substrate in a puddle shape; and a thickness adjusting operation of changing a rotational speed of the substrate to a rotational speed different from the first rotational speed to adjust a thickness of the liquid film of the etchant. Using the method, dispersion of the etching rate may be effectively controlled.

There is provided a configuration that includes: at least one transfer mechanism configured to transfer a substrate and at least one processing mechanism configured to process the substrate; an earthquake detector configured to detect an earthquake; and a controller configured to control the at least one transfer mechanism and the at least one processing mechanism according to a detection result of the earthquake detector, wherein the controller is configured to be capable of performing a stopping operation of the at least one transfer mechanism according to a P wave (initial tremor wave) and an S wave (principal fluctuation wave).

A processing apparatus includes a pick configured to hold and transfer a substrate, a first suction pad disposed at a position in the pick where the first suction pad comes into contact with a concavely curved substrate, a second suction pad disposed at a position in the pick where the second suction pad comes into contact with a convexly curved substrate, a pressure sensor configured to detect a pressure in a first suction path connected to the first suction pad and a pressure in a second suction path connected to the second suction pad, and a controller configured to control suction operations by the first suction pad and the second suction pad based on a detection value of the pressure sensor.

Provided is a wafer treatment apparatus capable of measuring warpage of a wafer, the wafer treatment apparatus including a support plate providing a surface on which the wafer is supported, a temperature control channel mounted in the support plate to provide a path through which a fluid flows, and a plurality of warpage measurers disposed on the support plate and having lower ends mounted to be vertically spaced apart from an upper portion of the temperature control channel.

A semiconductor equipment monitoring apparatus including a wafer-type sensor inside a process chamber and configured to sense a plasma state inside the process chamber; a light detector and analyzer configured to detect and analyze light sensed by the wafer-type sensor; and a light coupler between the wafer-type sensor and the light detector and analyzer and configured to transmit the light sensed by the wafer-type sensor to the light detector and analyzer. The wafer-type sensor includes a plurality of sensors each comprising a passive element.

An electrostatic chuck includes a base plate and a ceramic dielectric substrate. The ceramic dielectric substrate has a first major surface. The first major surface includes at least a first region and a second region. At least one first gas introduction hole connected to at least one of multiple first grooves. The first grooves include a first boundary groove, and at least one first in-region groove. Multiple second grooves and at least one second gas introduction hole are provided in the second region. The second grooves are include a second boundary groove extending along the first boundary and are provided to be most proximal to the first boundary. A groove end portion-end portion distance between the first boundary groove and the second boundary groove is smaller than a groove end portion-end portion distance between the first boundary groove and the first in-region groove.

A system for monitoring a precursor tank during a deposition process includes a sensor and a signal processor. The sensor includes a sensor chamber connected in line with the precursor tank and a deposition chamber, a radiation emitter to emit a radiation passing through a precursor-containing gas in the sensor chamber, and a radiation receiver to receive the radiation passed through the precursor-containing gas. The signal processor obtains an absorption spectrum of the precursor-containing gas from the received radiation and determines a remaining precursor amount in the precursor tank based on the absorption spectrum. The system facilitates inline monitoring the remaining precursor amount in the precursor tank during a deposition operation, thereby advantageously reducing risks of undergoing a deposition operation while the remaining precursor amount is unacceptably low and avoiding replacing the precursor tank while the remaining precursor amount is acceptable.

A method for supplying processing liquid is configured to adjust the supply amount of silica by a processing liquid supply unit in order to improve a selectivity ratio in a substrate treatment process through the processing liquid, to mix processing liquid substances, to adjust the concentration and temperature of the processing liquid on the basis of a substrate processing condition to supply the processing liquid to a substrate processing apparatus, to recover the processing liquid through a processing liquid recycling unit spatially separated from a processing liquid supply unit and to adjust the concentration of moisture and temperature of the processing liquid, and to supply the recycled processing liquid.