A control device of a substrate processing apparatus is configured to execute: calculating patterns for changing an order of loading to the substrate processing apparatus for multiple substrates loaded to the substrate processing apparatus; generating, for each obtained pattern, a time table in which process end times in the polishing device, the cleaning device, and the transport device are associated, so that an idling state does not occur from a time when the substrates are loaded to the substrate processing apparatus until a cleaning process ends; selecting a time table with a shortest time from a time when a process of a substrate initially loaded to the substrate processing apparatus starts until a process of a lastly loaded substrate ends in the obtained time tables; and controlling timings of loading the substrates to the substrate processing apparatus based on the selected time table.

A measurement station for measuring particle contamination in a transport enclosure for the atmospheric transport and storage of semiconductor wafers includes a particle counter and an interface designed to be coupled to the shell of a transport enclosure in place of the door. The interface includes a sampling orifice fluidly connected to the particle counter. The measurement station also includes a clean-gas injection device having at least one injection line including at least one injection nozzle to be fluidly connected to a ventilation port of the transport enclosure coupled to the interface for injecting clean gas into the transport enclosure, from outside the transport enclosure, through the at least one ventilation port of the transport enclosure.

A semiconductor manufacturing device includes: a turntable configured to be rotatable and having a first surface; a polishing pad provided on the first surface; a first support portion configured to rotatably hold the turntable; a top ring having a second surface and including a suction mechanism that holds an object to be processed on the second surface; a second support portion configured to rotatably hold the top ring; a first member to come into contact with the turntable or top ring; a second member to come into contact with the polishing pad or suction mechanism and with the turntable or top ring via the first member; and a first AE sensor to come into contact with the second member.

A technique includes: a process chamber configured to process a substrate; a transferor configured to transfer the substrate; a component relating to at least one of the process chamber or the transferor; a memory storing a plurality of operation events; a plurality of areas in each of which at least one of the process chamber, the transferor, or the component is provided; a detector provided in at least one of the plurality of areas and configured to be capable of detecting an operating sound of the component; and a controller is configured to be capable of controlling the component and the detector to select one area of the plurality of areas, which corresponds to each of the plurality of operation events, and to acquire detection data from the detector provided in the selected one area.

Various embodiments of wet processing systems, chemical supply systems and methods are provided herein to quickly and efficiently adjust a temperature of at least one processing liquid provided to a semiconductor substrate during a wet process. In the disclosed embodiments, processing liquid(s) flow through the chemical supply system at or near room temperature and the temperature of the processing liquid(s) is adjusted at or near the location(s) at which the processing liquid(s) are supplied to at least one surface of a semiconductor substrate (e.g., at or near the point of use) by supplying a variety of heated and/or cooled fluids to the processing liquid(s).

The present disclosure relates to a contamination controlled semiconductor processing system. The contamination controlled semiconductor processing system includes a processing chamber, a contamination detection system, and a contamination removal system. The processing chamber is configured to process a wafer. The contamination detection system is configured to determine whether a contamination level on a surface of the door is greater than a baseline level. The contamination removal system is configured to remove contaminants from the surface of the door in response to the contamination level being greater than the baseline level.

A semiconductor manufacturing system and a method are capable of restraining a pattern on a semiconductor substrate from collapsing while performing wet etching on the semiconductor substrate. As an example, a semiconductor manufacturing system includes a first fluid reservoir that retains a first fluid generated by adding, to a first liquid, an adjusting substance for adjusting a pH. The first fluid supplier supplies the first fluid to a mixer. A second fluid supplier causes a second fluid to turn into a supercritical fluid and supplies the supercritical fluid to the mixer. A first heating mechanism houses the mixer and heats the mixer. A second heating mechanism heats a chamber capable of housing a substrate. A fluid mixture supplier supplies the second heating mechanism with a fluid mixture into which the first fluid and the supercritical fluid are mixed in the mixer.

A processing chamber includes a chamber body, a lid disposed over the chamber body, and one or more first laser devices disposed over the lid. The one or more first laser devices are configured to emit light having a wavelength of about 380 nm to about 600 nm. A first isolation plate is disposed within an internal volume that is at least partially defined by the chamber body. A semi-translucent layer is disposed over the first isolation plate. The semi-translucent layer configured to absorb at least part of the light emitted from the one or more first laser devices.

A grinding apparatus for grinding a wafer includes a chuck table, a grinding unit, an elevating mechanism, a grinding water supply device, a spray nozzle, a thickness measuring device, and a controller to control spraying water from a spray nozzle toward the wafer so as to expand or contract the chuck table via the wafer and thereby changing a height of a holding surface such that warm water is sprayed toward a position, of which thickness value among thickness values measured by the thickness measuring device indicates a thickness greater than a preset target thickness, or a position, of which thickness value indicates a thickness greater than an average value of the thickness values; or cold water is sprayed toward a position, of which thickness value indicates a thickness less than the preset target thickness, or a position, of which thickness value indicates a thickness less than the average value.

A substrate processing apparatus includes an electrostatic charging unit and a processing unit. The electrostatic charging unit includes an electrostatic charger positively charging a first main surface of a substrate. The processing unit includes a processing chamber, and performs a process which includes at least one of heating of the substrate in the processing chamber and supply of a processing gas to the substrate and which involves the generation of metal ions in the processing chamber.