An exemplary method of monitoring a bath process includes processing a first wafer by submerging the first wafer within a bath solution; capturing a video of the bath solution containing the first wafer during a first time interval; analyzing the video based on intensity of light captured in a frame of the video; and based on analyzing the video, determining a first metric of the bath solution during the first time interval.

A training device includes an experimental data acquirer that acquires a first processing amount indicating a difference between a film thickness obtained before a process for a film and a film thickness obtained after the process for the film, after a substrate processing apparatus is driven according to processing conditions including a variable condition that varies over time and executes the process for the film, and a model generator that generates a learning model, with the learning model executing machine learning using training data that includes the variable condition and the first processing amount corresponding to the processing conditions and predicting a second processing amount that indicates a difference between a film thickness obtained before the process for the film and a film thickness obtained after the process for the film wherein the learning model includes a first convolutional neural network.

Methods and apparatus for multi-sensor determination of a state of semiconductor equipment are provided In some embodiments disclosed herein, semiconductor manufacturing equipment may include: a plurality of sensors comprising one or more spatial sensors, one or more spectral sensors, and one or more temporal sensors disposed about the semiconductor manufacturing equipment; and a controller communicatively coupled to the plurality of sensors, the controller configured to cause: determining a set of signals, from the plurality of sensors, to monitor during a process to be performed by the semiconductor manufacturing equipment; during the process, obtaining measurements associated with the set of signals from the plurality of sensors; and determining an indication of a state of the semiconductor manufacturing equipment based on a combination of data generated from the measurements associated with the set of signals.

A mapping device capable of detecting a stored state of a square shaped plate-form object including: a first detection part having a first detection axis which crosses a first side and a second side perpendicular to the first side object to detect a first corner thickness; a second detection part having a second detection axis which crosses the first and third sides of the object to detect a second corner thickness; a first information acquiring unit acquiring a first information relating to a warpage amount in the first direction of the object; an adjustment calculation unit calculating an adjusted detection value relating to the thickness of the object in the first direction by adjusting, based on the first information, a sum of the first and second corner thicknesses or an average thereof; and a distinguishing unit distinguishing the stored state of the object using the adjusted detection value.

A substrate processing apparatus and a substrate processing method are provided, in which a flow rate of CO.sub.2 injected into a supercritical drying vessel is controlled through multi-level pressure control. The substrate processing method includes disposing a substrate coated with a chemical liquid in a process chamber, that includes a space in which the substrate is processed; drying the substrate by using a supercritical fluid; and taking the substrate out of the process chamber when the substrate is dried.

A method includes: supplying a processing liquid to a center position of a substrate surface; shifting a supply position of the processing liquid from the center position to a first eccentric position; holding the supply position of the processing liquid at the first eccentric position and supplying a substitute liquid to a second eccentric position; shifting the supply position of the processing liquid in a direction away from the center position, and shifting a supply position of the substitute liquid to the center position; and supplying the processing liquid to the first eccentric position at a first flow rate, and reducing the flow rate of the processing liquid to a second flow rate after the supply position of the processing liquid starts to be shifted from the first eccentric position in the direction and until the supply position of the substitute liquid reaches the center position.

A process condition measurement apparatus is disclosed. The apparatus includes a substrate, one or more insulation portions, a first plurality of interconnect traces, a second plurality of interconnect traces, and a plurality of sensors disposed on the substrate. The second plurality of interconnect traces is disposed over the first plurality of interconnect traces and intersects at a plurality of locations to form a matrix of interconnect junctions across one or more locations of the substrate. A respective sensor is electrically coupled to a respective trace of the first and second plurality of interconnect traces. The respective sensor is individually readable by addressing the respective trace of the first and second plurality of interconnect traces.

Disclosed herein is a liquid precursor delivery system for precise vaporization processes. The system comprises an ampoule, a light-emitting diode heater, a level sensor, and a controller. The level sensor monitors the precursor's surface level, with data processed by the controller to adjust heater power. Optionally, a precursor consumption predictor estimates precursor usage. The design allows dynamic adjustments, enhancing precision in precursor delivery.

Systems, methods, and apparatus including designs embodied in machine-readable media for exhaust control. One of the methods includes measuring an airflow through an exhaust path of a gas panel of a semiconductor processing system; determining whether the measured airflow is within a defined range; in response to determining that the measured airflow is outside of the defined range, selectively opening or closing the exhaust gate by an incremental amount.

A cleaning device includes a base unit adapted to support a wafer and a drive unit disposed above the base unit. The drive unit includes a left-right mount, a left-right slide seat slidably disposed on the left-right mount, a top-bottom mount fixed to the left-right slide seat, a top-bottom slide seat slidably disposed on the top-bottom mount, and a carry plate fixed to the top-bottom slide seat. A nozzle seat is connected to the carry plate. A nozzle is connected to the nozzle seat to spray a cleaning solution onto the wafer. A laser marking unit is connected to the left-right mount to project laser lights to the cleaning solution sprayed onto the wafer.