A wafer cleaning system including a stage, a defect inspection module and a defect remover is provided. The stage is configured to support a wafer. The defect inspection module is located above the stage and configured to detect a location of at least one defect on a surface of the wafer. The defect remover is located above the stage and configured to remove the at least one defect on the surface of the wafer according to the location of the at least one defect. In addition, a wafer detecting module and a wafer cleaning method are also provided.

Embodiments of the present disclosure relate to substrate bow measurement and control. For example, a system may include a memory, and at least one processing device, operatively coupled with the memory, to initiate a process with respect to a substrate, obtain thermal radiation data corresponding to one or more locations on the substrate, determine an amount of bow of the substrate based on the thermal radiation data, and cause at least one corrective action to be performed based on the amount of bow of the substrate. The least one action includes at least one of cause an alert to be generated, or cause at least one process parameter of the process to be changed.

An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

A substrate processing apparatus includes: a process chamber performing film-forming processing to a substrate; a substrate support that is provided in the process chamber and includes a plurality of mounting surfaces on which the substrate is mounted; and a detector that is disposed outside or inside the process chamber and detects a state of a film-forming material adhering to at least one of the plurality of mounting surfaces in a non-contact manner.

A substrate processing apparatus includes: a brush processing section configured to perform brush processing on a surface of a substrate taken out from a container; a substrate reversal section configured to flip the substrate before the brush processing and after the brush processing; a substrate imaging section configured to perform pre-processing imaging on the surface before the brush processing, and perform post-processing imaging on the surface after the brush processing and before the substrate is returned to the container; and a controller, wherein the controller determines whether or not the substrate after the brush processing is a good product based on a result of the post-processing imaging, and changes, as necessary, a process condition of the brush processing for the substrate having been subjected to the pre-processing imaging or a substrate to be processed afterward based on at least one of the pre-processing imaging or the post-processing imaging.

Methods and apparatus for processing a substrate is provided herein. For example, the method comprises prior to processing a substrate, obtaining a first measurement at a first point along a surface of the substrate, in a process chamber processing the substrate in a presence of an electric field, subsequent to processing the substrate, obtaining a second measurement at the first point along the surface of the substrate, and determining whether substrate warpage occurred based upon analysis of the first measurement and the second measurement.

Disclosed herein is a method comprising: determining parameters of a recipe of charged particle beam inspection of a region on a sample, based on a second set of characteristics of the sample; inspecting the region using the recipe.

A warpage amount estimation apparatus that estimates a warpage amount of a substrate includes a processor and a memory. The processor acquires a captured image of one surface of an estimation target substrate. The processor calculates a rate of change in pixel value relating to a substrate radial direction in the captured image of the one surface of the estimation target substrate. The processor estimates a warpage amount of the estimation target substrate based on a correlation obtained in advance between a rate of change in pixel value relating to the substrate radial direction in a captured image of the one surface of a substrate and a warpage amount of the substrate, and on a calculation result of the rate of change which is calculated.

The present application discloses a detection structure for chip edge cracks and a detection method thereof. In one embodiment, the detection structure comprises a test ring located between a chip scribe line and a sealing ring, wherein the chip internally comprises two test pads for detecting continuity of the test ring, the sealing ring comprises a P-type doped ring located in a substrate and a shallow trench isolation area for isolating the sealing ring the test ring, the shallow trench isolation area is formed with N-type doped regions electrically connected to the two test pads respectively; the test ring comprises a multi-layer interconnection structure located on the substrate and the interconnection structure is electrically connected to the two test pads through the N-type doped regions. The present application can detect edge cracks caused by wafer manufacturing, die sawing, and chip packaging processes to reduce reliability risk.

In certain embodiments, a workstation includes: a cleaning station configured to clean a die vessel, wherein the die vessel is configured to secure a semiconductor die; an inspection station configured to inspect the die vessel after cleaning to determine whether the die vessel is identified as passing inspection; and a conveyor configured to move the die vessel between the cleaning station and the inspection station.