An embodiment of an apparatus may include a chuck body, and a surface formed on the chuck body to hold a wafer, where the surface has a non-flat shape. Other embodiments are disclosed and claimed.

A member for semiconductor manufacturing apparatus includes: a ceramic plate that has an upper surface including a wafer placement surface; a conductive base that is disposed on a lower surface of the ceramic plate; a first hole that extends through the ceramic plate; a second hole that extends through the conductive base; a porous plug that has an upper surface that is exposed from an upper opening of the first hole and a lower surface that is flush with or below an upper surface of the conductive base; an insulating pipe that has an upper surface that is located below the wafer placement surface and a lower surface that is located below the lower surface of the porous plug; and an integrally formed member that is obtained by integrally forming the porous plug and the insulating pipe.

A temperature control system of a semiconductor manufacturing device includes first and second heating media storages that respectively store low-temperature heating media and high-temperature heating media, a mixing device including a mixing valve that mixes the low-temperature heating media and the high-temperature heating media at a predetermined mixing ratio, and a control device. The mixing device provides mixed heating media to a load, and distributes recovered heating media recovered from the load to the first and second heating media storages. The control device is configured to, by performing feed-forward control and feedback control over a mixing unit temperature using a relationship model between a reference temperature representing a temperature of heating media passing through the load and the mixing unit temperature which is a temperature of heating media output by the mixing valve, control the mixing ratio such that the reference temperature has a target reference temperature.

An electrostatic chuck includes a ceramic top plate layer made of a beryllium oxide material, a ceramic bottom plate layer made of a beryllium oxide material, a ceramic middle plate layer disposed between the ceramic top plate layer and the ceramic bottom plate layer, an electrode layer disposed between the ceramic top plate layer and the ceramic middle plate layer, and a heater layer disposed between the ceramic middle plate layer and the ceramic bottom plate layer. The electrode layer joins and hermetically seals the ceramic top plate layer to the ceramic middle plate layer, and the heater layer joins and hermetically seals the ceramic middle plate layer to the ceramic bottom plate layer.

There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a base, a ceramic member disposed on the base and having a substrate support surface and a ring support surface, one more annular members disposed on the ring support surface to surround a substrate on the substrate support surface, first and second central electrodes inserted into the ceramic member, first to fourth vertical connectors inserted into the ceramic member, first and second annular connectors inserted into the ceramic member, and a central heater electrode inserted into the ceramic member; a DC power source electrically connected to an outer region of the first annular connector through the third vertical connector; and a voltage pulse generator electrically connected to an outer region of the second annular connector through the fourth vertical connector.

An edge ring used in a chamber comprises a cover with an internal space, a circuit board disposed in the internal space of the cover and at least one electrical element disposed on the circuit board. Here, the electrical element includes a temperature sensor, and temperature of the edge ring, heat distribution generated when ion bombardment occurs in plasma state or heat flux in the edge ring is measured by using the temperature sensor.

An electrostatic chuck assembly includes an upper electrostatic chuck including an upper surface on which a wafer is adsorbed, a lower electrostatic chuck disposed below the upper electrostatic chuck and supporting the upper electrostatic chuck, a base disposed below the lower electrostatic chuck and supporting the lower electrostatic chuck, and a coating layer including an upper surface portion disposed on an upper surface of the lower electrostatic chuck, a side portion disposed on a side surface of the lower electrostatic chuck, and a bottom portion disposed on a part of a lower surface of the lower electrostatic chuck, wherein the lower surface of the lower electrostatic chuck includes a first surface in contact with an upper surface of the base, and a second surface spaced apart from an upper surface of the base, and the bottom portion is disposed horizontally apart from the first surface.

An electrostatic chuck 10 includes a dielectric substrate 100, an RF electrode 140 provided inside the dielectric substrate 100, a feed terminal 170 arranged on an inner side of a recessed section 160 which is formed on a surface 120 opposite to a placement surface in the dielectric substrate 100, and a connection section 190 configured to electrically connect the RF electrode 140 with the feed terminal 170. The connection section 190 extends from a bottom 161 of the recessed section 160 toward the placement surface, and extends up to a position closer to the placement surface side than the RF electrode 140.

The present disclosure describes a chuck-based device and a method for cleaning a semiconductor manufacturing system. The semiconductor manufacturing system can include a chamber, a chuck housed in the chamber and configured to hold a substrate, and a control device configured to control a translational displacement and a rotation of the chuck. The chuck can include a passage extending along a periphery of the chuck and dividing the chuck into an inner portion and an outer sidewall portion, and a first multiple of openings through the outer sidewall portion of the chuck and interconnected with the passage. The passage can be configured to transport a fluid. The first multiple of openings can be configured to dispense the fluid.

The inventive concept provides a substrate treating method. The substrate treating method for treating a substrate at which thin films are stacked and a hole is formed thereon including treating the substrate using a first plasma including an ion, which is a first treating step; and treating the substrate using a second plasma removed of an ion, which is a second treating step.