A microelectronic structure with through substrate vias (TSVs) and method for forming the same is disclosed. The microelectronic structure can include a bulk semiconductor with a via structure. The via structure can have a first and second conductive portion. The via structure can also have a barrier layer between the first conductive portion and the bulk semiconductor. The structure can have a second barrier layer between the first and second conductive portions. The second conductive portion can extend from the second barrier layer to the upper surface of the bulk semiconductor. The microelectronic structure containing TSVs is configured so that the microelectronic structure can be bonded to a second element or structure.

A semiconductor device includes a stack of alternating word line layers and insulating layers. The stack includes a core area, a stair step area, and, optionally, a dummy transition area connecting the core area to the stair step area. The semiconductor device also includes a gate line (GL) trench through the stack extending from the core area through the dummy transition area to the stair step area. The GL trench has a first width within the core area and a second width within the stair step area that is different from the first width. The semiconductor device also includes a first channel structure formed through the stack within the core area, and a stair step contact (SCT) formed through at least a portion of the stack within the stair step area. The SCT connects one of the word line layers of the stack within the stair step area.

A chip structure having an interconnect and a manufacturing method thereof include a buffer layer formed between an upper metal structure and a passivation layer under the upper metal structure so as to prevent fractures, such as cracks, from occurring in the passivation layer due to difference of stress between the upper metal structure and the passivation layer.

A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the cap layer.

An apparatus comprises a first metal feature in a first dielectric layer over a substrate, wherein a sidewall portion of the first dielectric layer is over a top surface of the first metal feature, a second dielectric layer over the first dielectric layer and a second metal feature extending through the second dielectric layer, wherein a bottom of a first portion of the second metal feature is in contact with the top surface of the first metal feature and a bottom of a second portion of the second metal feature is in contact with the sidewall portion of the first dielectric layer.

A quantum computing system that includes a quantum circuit device having at least one operating frequency; a first substrate having a first surface on which the quantum circuit device is disposed; a second substrate having a first surface that defines a recess of the second substrate, the first and second substrates being arranged such that the recess of the second substrate forms an enclosure that houses the quantum circuit device; and an electrically conducting layer that covers at least a portion of the recess of the second substrate.

A semiconductor device includes a stack including gate layers and insulating layers alternately stacked along a first direction, channel structures located in an array region of the stack, a first staircase located at a first section in a connection region of the stack, the connection region and the array region arranged in a second direction perpendicular to the first direction, a second staircase located at a second section in the connection region of the stack, and an intermediate staircase located at the first section and disposed between the first staircase and the second staircase in the second direction. The intermediate staircase includes intermediate group stair steps ascending in the second direction. The intermediate staircase has a first sidewall and a second sidewall in the second direction. The second sidewall is closer to the second staircase than the first sidewall. The second sidewall is parallel to the first direction. The intermediate group stair steps of the intermediate staircase face the first staircase.

Microelectronic deviceshaving at least one conductive contact structure adjacent a silicide regionare formed using methods that avoid unintentional contact expansion and contact reduction. A first metal nitride liner is formed in a contact opening, and an exposed surface of a polysilicon structure is thereafter treated (e.g., cleaned and dried) in preparation for formation of a silicide region. During the pretreatments (e.g., cleaning and drying), neighboring dielectric material is protected by the presence of the metal nitride liner, inhibiting expansion of the contact opening. After forming the silicide region, a second metal nitride liner is formed on the silicide region before a conductive material is formed to fill the contact opening and form a conductive contact structure (e.g., a memory cell contact structure, a peripheral contact structure).

Various embodiments of the present disclosure are directed towards an integrated circuit (IC) in which cavities separate wires of an interconnect structure. For example, a conductive feature overlies a substrate, and an intermetal dielectric (IMD) layer overlies the conductive feature. A first wire and a second wire neighbor in the IMD layer and respectively have a first sidewall and a second sidewall that face each other while being separated from each other by the IMD layer. Further, the first wire overlies and borders the conductive feature. A first cavity and a second cavity further separate the first and second sidewalls from each other. The first cavity separates the first sidewall from the IMD layer, and the second cavity separates the second sidewall from the IMD layer. The cavities reduce parasitic capacitance between the first and second wires and hence resistance-capacitance (RC) delay that degrades IC performance.

A method for forming a semiconductor device structure is provided. The method includes forming a first conductive structure surrounded by a first dielectric layer and forming a second dielectric layer over the first conductive structure and the first dielectric layer. The method also includes forming a via hole in the second dielectric layer, and the via hole exposes the first conductive structure. The method further includes partially removing the first conductive structure through the via hole to form a recess in the first conductive structure. In addition, the method includes forming a second conductive structure filling the recess and the via hole.