An electronic device may include a first die that may include a first set of die contacts. The electronic device may include a second die that may include a second set of die contacts. The electronic device may include a bridge interconnect that may include a first set of bridge contacts and may include a second set of bridge contacts. The first set of bridge contacts may be directly coupled to the first set of die contacts (e.g., with an interconnecting material, such as solder). The second set of bridge contacts may be directly coupled to the second set of die contacts (e.g., with solder). The bridge interconnect may help facilitate electrical communication between the first die and the second die.

A manufacturing method includes: forming a stacked chip structure, wherein forming the stacked chip structure includes: attaching a semiconductor wafer for first semiconductor chips onto a carrier and attaching second semiconductor chips onto the semiconductor wafer, forming a first heat dissipation pattern on an upper surface of the semiconductor wafer and side surfaces of the second semiconductor chips, and cutting the first heat dissipation pattern and the semiconductor wafer to separate the semiconductor wafer into the first semiconductor chips; mounting the stacked chip structure including at least one of the first semiconductor chips and at least one of the second semiconductor chips on a first interconnection structure; and forming a second heat dissipation pattern on the first interconnection structure.

An electronic device package includes a circuit layer, a first semiconductor die, a second semiconductor die, a plurality of first conductive structures and a second conductive structure. The first semiconductor die is disposed on the circuit layer. The second semiconductor die is disposed on the first semiconductor die, and has an active surface toward the circuit layer. The first conductive structures are disposed between a first region of the second semiconductor die and the first semiconductor die, and electrically connecting the first semiconductor die to the second semiconductor die. The second conductive structure is disposed between a second region of the second semiconductor die and the circuit layer, and electrically connecting the circuit layer to the second semiconductor die.

A method includes: providing an active photonic component of a photonic integrated circuit (PIC); attaching two electrodes to the active photonic component of the PIC; providing a first landing pad on a front surface of the PIC, wherein, when viewed from a direction perpendicular to the front surface of the PIC, a center of the active photonic component of the PIC is offset from a nearest edge of the first landing pad by about a distance less than 10 m; and electrically connecting the first landing pad to one of the two electrodes.

A semiconductor package according to an embodiment includes a substrate; a protective layer disposed on the substrate; a first adhesive member disposed on the protective layer and having an open loop shape along a circumferential direction of an upper surface of the protective layer; and a cover member disposed on the first adhesive member, wherein a lower surface of the cover member includes: a first lower surface that contacts the first adhesive member, and a second lower surface that does not contact the first adhesive member, and the protective layer includes a first opening that vertically overlaps the second lower surface of the cover member and does not vertically overlap the first adhesive member.

A semiconductor package (100) and a data transmission method for the semiconductor package (100) are disclosed. The semiconductor package (100) includes a photonic integrated circuit chip (110), a plurality of memory chips (120), and a first chip (130). The first chip (130) is electrically connected to the photonic integrated circuit chip (110), so that data is transmitted between the first chip (130) and the photonic integrated circuit (110) through an electrical signal. The first chip (130) is further electrically connected to each memory chip (120), so that data is transmitted between the first chip (130) and each of the plurality of memory chips (120) via electrical signals.

A semiconductor structure includes an interposer that includes: a substrate; a redistribution structure (RDS) on the substrate; a passivation film on the RDS, where the passivation film includes a first etch stop layer (ESL) on the RDS and a first dielectric layer on the first ESL; a via embedded in the passivation film, where the via is electrically coupled to a conductive feature of the RDS; a bonding film on the passivation film, where the bonding film includes a second ESL on the passivation film and a second dielectric layer on the second ESL; and a bonding pad and a first dummy bonding pad that are embedded in the bonding film, where the bonding pad is electrically coupled to the via, and the first dummy bonding pad is electrically isolated; and a die attached to the interposer, where a die connector of the die is bonded to the bonding pad.

This application discloses a chip packaging structure, an electronic device, and a preparation method. The packaging structure includes: a first redistribution layer, chip wafers, a second redistribution layer, and a packaging layer. The first redistribution layer and the second redistribution layer are electrically connected to each other. The packaging layer is sandwiched between the first redistribution layer and the second redistribution layer. At least two stacked chip wafers are embedded in the packaging layer. Any two adjacent chip wafers are electrically connected to each other, and any of the chip wafers is electrically connected to at least one of the first redistribution layer and the second redistribution layer.

Provided is a semiconductor package including a first redistribution structure, a second redistribution structure on the first redistribution structure, a first semiconductor device being between the first redistribution structure and the second redistribution structure, a first dummy chip being apart from the first semiconductor device in a lateral direction, a first connection wire being between the first semiconductor device and a first side surface of the first dummy chip, the first connection wire electrically connecting the first redistribution structure to the second redistribution structure, and a second connection wire being on a second side surface opposite to the first side surface of the first dummy chip, the second connection wire electrically connecting the first redistribution structure to the second redistribution structure.

A semiconductor die includes: a main body including a top surface and a bottom surface; a plurality of first bonding pads disposed on the top surface; and a plurality of second bonding pads disposed on the bottom surface. When viewed in a direction perpendicular to the top surface or the bottom surface, the plurality of first bonding pads are disposed at positions that match positions to which the plurality of second bonding pads are shifted in a plane of the bottom surface while maintaining a positional relationship between the plurality of second bonding pads. The main body includes a first inter-die interface circuit and a second inter-die interface circuit. The plurality of first bonding pads are connected to the first inter-die interface circuit, and the plurality of second bonding pads are connected to the second inter-die interface circuit.