A manufacturing method includes: forming a stacked chip structure, wherein forming the stacked chip structure includes: attaching a semiconductor wafer for first semiconductor chips onto a carrier and attaching second semiconductor chips onto the semiconductor wafer, forming a first heat dissipation pattern on an upper surface of the semiconductor wafer and side surfaces of the second semiconductor chips, and cutting the first heat dissipation pattern and the semiconductor wafer to separate the semiconductor wafer into the first semiconductor chips; mounting the stacked chip structure including at least one of the first semiconductor chips and at least one of the second semiconductor chips on a first interconnection structure; and forming a second heat dissipation pattern on the first interconnection structure.

An electronic device package includes a circuit layer, a first semiconductor die, a second semiconductor die, a plurality of first conductive structures and a second conductive structure. The first semiconductor die is disposed on the circuit layer. The second semiconductor die is disposed on the first semiconductor die, and has an active surface toward the circuit layer. The first conductive structures are disposed between a first region of the second semiconductor die and the first semiconductor die, and electrically connecting the first semiconductor die to the second semiconductor die. The second conductive structure is disposed between a second region of the second semiconductor die and the circuit layer, and electrically connecting the circuit layer to the second semiconductor die.

A method includes: providing an active photonic component of a photonic integrated circuit (PIC); attaching two electrodes to the active photonic component of the PIC; providing a first landing pad on a front surface of the PIC, wherein, when viewed from a direction perpendicular to the front surface of the PIC, a center of the active photonic component of the PIC is offset from a nearest edge of the first landing pad by about a distance less than 10 m; and electrically connecting the first landing pad to one of the two electrodes.

A semiconductor package according to an embodiment includes a substrate; a protective layer disposed on the substrate; a first adhesive member disposed on the protective layer and having an open loop shape along a circumferential direction of an upper surface of the protective layer; and a cover member disposed on the first adhesive member, wherein a lower surface of the cover member includes: a first lower surface that contacts the first adhesive member, and a second lower surface that does not contact the first adhesive member, and the protective layer includes a first opening that vertically overlaps the second lower surface of the cover member and does not vertically overlap the first adhesive member.

In an embodiment, a package including: a redistribution structure including a first dielectric layer and a first conductive element disposed in the first dielectric layer; a first semiconductor device bonded to the redistribution structure, wherein the first semiconductor device includes a first corner; and an underfill disposed over the redistribution structure and including a first protrusion extending into the first dielectric layer of the redistribution structure, wherein the first protrusion of the underfill overlaps the first corner of the first semiconductor device in a plan view.

A method of forming a semiconductor structure includes: forming a first redistribution structure on a first side of a wafer, the first redistribution structure including dielectric layers and conductive features in the dielectric layers; forming grooves in the first redistribution structure, the grooves exposing sidewalls of the dielectric layers and the wafer, the grooves defining a plurality of die attaching regions; bonding a plurality of dies to the first redistribution structure in the plurality of die attaching regions; forming a first molding material on the first side of the wafer around the plurality of dies, the first molding material filling the grooves; forming a passivation layer on a second side of the wafer opposing the first side; and dicing along the grooves from the second side of the wafer to form a plurality of individual semiconductor packages, each of the plurality of individual semiconductor packages including a respective die.

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of semiconductor fins having a longest dimension along a first direction. Adjacent individual semiconductor fins of the first plurality of semiconductor fins are spaced apart from one another by a first amount in a second direction orthogonal to the first direction. A second plurality of semiconductor fins has a longest dimension along the first direction. Adjacent individual semiconductor fins of the second plurality of semiconductor fins are spaced apart from one another by the first amount in the second direction, and closest semiconductor fins of the first plurality of semiconductor fins and the second plurality of semiconductor fins are spaced apart by a second amount in the second direction.

A die substrate, including a dielectric body, the body having a first body surface, a second body surface on an opposite side and body edge surfaces located in between. Current-carrying metal lines located in the dielectric body. One or more of the metal lines routed to one or more of the body edge surfaces. A termination layer located on the at least one body edge surface and electrically connected to the least one of the metal lines routed to the body edge surfaces. Electrically conductive plating located on the at least one body edge surface. The plating connected to the termination layer for an electrical current connection or a ground connection to the at least one metal line. A method of manufacturing an integrated circuit package, the package and a computer having the die substrate are also disclosed.

A package structure and method for forming the same are provided. The package structure includes a substrate having a front surface and a back surface, and a die formed on the back surface of the substrate. The package structure includes a first through via structure formed in the substrate, a conductive structure formed in a passivation layer) over the front surface of the substrate. The conductive structure includes a via portion in direct contact with the substrate. The package structure includes a connector (formed over the via portion, wherein the connector includes an extending portion directly on a recessed top surface of the via portion.

A package structure is provided. The package structure includes a chip structure having opposite surfaces with different widths. The chip structure has an inclined sidewall between the opposite surfaces. The package structure also includes a protective layer laterally surrounding the chip structure.