A semiconductor package includes a first semiconductor chip including a first semiconductor substrate having a first active surface and a first inactive surface opposite to each other, a plurality of through electrodes penetrating the first semiconductor substrate, and a rear cover layer covering the first inactive surface, a second semiconductor chip stacked on the first semiconductor chip and including a second semiconductor substrate having a second active surface and a second inactive surface opposite to each other, and a front cover layer covering the second active surface, a plurality of signal pad structures penetrating the rear cover layer and the front cover layer to be electrically connected to the plurality of through electrodes, and a plurality of dummy pad structures apart from the plurality of signal pad structures in a horizontal direction, and penetrating the rear cover layer and the front cover layer.

A method of dispensing an underfill material on a semiconductor device package. A substrate having a semiconductor chip electrically connected thereto and offset from the substrate by solder joints is provided. The semiconductor chip has a footprint defined by a length and width of the semiconductor chip. Standoff heights between the substrate and the semiconductor chip are calculated and used to determine a volume of underfill material needed to substantially fill a space between the substrate and the semiconductor chip. The determined volume of underfill material is dispensed on the substrate such that the space between the substrate and the semiconductor chip is substantially filled by the underfill material. The method may allow for improved dispensing an underfill material to substantially fill the space between the substrate and semiconductor chip when variations in standoff height are present.

An electronic device may include a display having a monolithic array of light-emitting diodes mounted to a surface of a substrate layer. The diodes may include contact pads. Driver circuitry may independently drive each of the diodes in the array using drive signals. The driver circuitry may be formed on a driver integrated circuit. Bond pads may be formed on a surface of the integrated circuit. Copper pillars may be grown on the bond pads. In another suitable arrangement, the driver circuitry may be formed on a driver printed circuit board coupled to an interposer by a flexible printed circuit. The interposer may include bond pads and copper pillars grown on the bond pads. The contact pads on each of the diodes may be simultaneously bonded to the copper pillars. A surface of the substrate layer may be patterned to form light redirecting elements if desired.

A semiconductor structure includes an interposer including redistribution wiring interconnects and redistribution insulating layers; a first semiconductor die attached to the interposer through a first array of solder material portions; and a second semiconductor die attached to the interposer through a second array of solder material portions. The interposer includes at least one inductor structure located between an area of the first array of solder material portions and an area of the second array of solder material portions in a plan view and laterally encloses a respective area in the plan view.

A semiconductor structure includes a functional die, a dummy die, a conductive feature, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The conductive feature is electrically connected to the functional die. The seal ring is disposed aside the conductive feature. The alignment mark is disposed between the seal ring and the conductive feature, and the alignment mark is electrically isolated from the dummy die, the conductive feature and the seal ring.

A semiconductor package includes a first semiconductor chip having a first surface and a second surface. First connection pads are adjacent to the first surface. A second semiconductor chip has a lower surface facing the first surface of the first semiconductor chip and includes second connection pads, Connection bumps contact the first connection pads and the second connection pads between the first semiconductor chip and the second semiconductor chip. An adhesive layer is interposed between the first semiconductor chip and the second semiconductor chip to at least partially surround the connection bumps. The adhesive layer includes a protruding portion protruding from a side surface of the second semiconductor chip. A barrier structure covers a portion of the first connection pads, partially overlapping the second semiconductor chip on the first surface, and contacting the protruding portion of the adhesive layer.

A method for fabricating a package structure is provided. The method includes forming a metal layer over a carrier substrate. The method includes forming a dielectric layer over the metal layer. The method includes forming a plurality of first openings in the dielectric layer. The method includes forming a plurality of second openings in the dielectric layer. The first openings and the second openings expose the metal layer. The method includes forming a conductive material in the first openings and the second openings to form a plurality of conductive features. The method includes removing the metal layer and the carrier substrate. The method includes thinning the dielectric layer around the conductive features. The method also includes bonding a package component to the conductive features.

Provided are a semiconductor structure and a method of forming the same. The semiconductor structure includes: a substrate, an under bump metallurgy (UBM) structure, and a solder. The UBM structure is disposed over the substrate. The UBM structure includes a first metal layer; a second metal layer disposed on the first metal layer; and a third metal layer disposed on the second metal layer. A sidewall of the first metal layer is substantially aligned with a sidewall of the second metal layer, and a sidewall of the third metal layer is laterally offset inwardly from the sidewalls of the first and second metal layers. The solder is disposed on the third metal layer.

A semiconductor device has a photonic semiconductor die. The photonic semiconductor die is disposed on a carrier with a photonic circuit of the photonic semiconductor die oriented toward the carrier. An e-bar is disposed on the carrier. An encapsulant is deposited over the photonic semiconductor die and e-bar. A first surface of the encapsulant is backgrinded to expose the e-bar. A first build-up interconnect structure is formed over the first surface of the encapsulant. A second build-up interconnect structure is formed over a second surface of the encapsulant. The photonic circuit is exposed through an opening of the second build-up interconnect structure.

A semiconductor package including a package substrate defining a cavity therein; a first semiconductor chip on the package substrate; a first bump between the package substrate and the first semiconductor chip, the first bump electrically connecting the package substrate and the first semiconductor chip; a second semiconductor chip on the package substrate, the second semiconductor chip being at least partially in the cavity; a first bonding wire electrically connecting the package substrate and the second semiconductor chip; and an underfill layer covering the first bump and at least a portion of the first bonding wire.