Implementations described herein relate to various semiconductor device assemblies. In some implementations, an apparatus includes a dielectric layer having a first material that is an insulative material, a conductive layer having a second material that is a conductive material, and a stimulus-responsive strain layer having a third material that deforms in response to an applied stimulus.

A package structure includes an embedded component circuit structure layer, a signal interconnection structure layer, a power structure layer, and an electronic component layer. The embedded component circuit structure layer includes at least one embedded component and has a first surface and a second surface opposite to each other. The signal interconnection structure layer is disposed on the first surface and is electrically connected to the embedded component circuit structure layer. The power structure layer is disposed on and electrically connected to the signal interconnection structure layer. The electronic component layer includes a plurality of electronic components, is disposed on the second surface, and is electrically connected to the embedded component circuit structure layer. A coefficient of thermal expansion of the signal interconnection structure layer is higher than a coefficient of thermal expansion of the electronic component layer and a coefficient of thermal expansion of the power structure layer.

A semiconductor device includes a wiring substrate having an upper surface, a semiconductor chip mounted on the wiring substrate, and a stiffener ring fixed onto the wiring substrate via a plurality of adhesive layers. The upper surface is a quadrangular shape, and first and second center lines and first and second diagonal lines can be drawn. The stiffener ring has four extension portions and four corner portions. Adhesive layers include first, second, third and fourth adhesive layers that respectively overlap with the four extension portions and that are arranged at a portion overlapping with one of the first center line and the second center line. Also the adhesive layers include fifth, sixth, seventh, and eighth adhesive layers that respectively overlap with the four corner portions and that are arranged at a portion overlapping with one of the first diagonal line and the second diagonal line.

A semiconductor package includes a package substrate having an upper surface, a lower surface opposite to the upper surface, and a receiving groove that extends from the upper surface, toward the lower surface, by a predetermined depth; a first semiconductor chip in the receiving groove and protruding from the upper surface of the package substrate to have a predetermined height from the upper surface of the package substrate; an underfill member in the receiving groove and between the first semiconductor chip and an inner surface of the receiving groove; a plurality of second semiconductor chips sequentially stacked on the first semiconductor chip; and a molding member on the package substrate and covering the first semiconductor chip and the plurality of second semiconductor chips.

Provided is a redistribution structure having reduced parasitic capacitance. The redistribution structure may include a via layer and a wiring layer disposed on the via layer in a first direction perpendicular to the via layer, the wiring layer including a metal plate and a first insulation pattern configured to penetrate the metal plate in the first direction. An outer side surface of the first insulation pattern may be exposed from a side surface of the metal plate.

A semiconductor package may include a first semiconductor chip including a first area, a second area, an optical conversion device that is in the first area, and vertical wires that are in the second area, the optical conversion device being configured to receive an optical signal and convert it into an electrical signal, a first dummy chip on the first semiconductor chip and at least partially overlapping with the first area, a second semiconductor chip at least partially overlapping with the second area, a wiring layer between the first and second semiconductor chips and including first wiring patterns that connect the vertical wires and the second semiconductor chip, and second wiring patterns that at least partially overlap with the first dummy chip, and a second dummy chip on the first dummy chip and on the second semiconductor chip.

A microelectronic system may include a microelectronic component having electrically conductive elements exposed at a first surface thereof, a socket mounted to a first surface of the microelectronic component and including a substrate embedded therein, one or more microelectronic elements each having active semiconductor devices therein and each having element contacts exposed at a front face thereof, and a plurality of socket pins mounted to and extending above the substrate, the socket pins being ground shielded coaxial socket pins. The one or more microelectronic elements may be disposed at least partially within a recess defined within the socket. The socket may have a land grid array comprising top surfaces of the plurality of the socket pins or electrically conductive pads mounted to corresponding ones of the socket pins, and the element contacts of the one or more microelectronic elements may be pressed into contact with the land grid array.

Provided is a printed circuit board including a substrate structure having a first surface including a chip mounting region on which a semiconductor chip is mounted and a second surface opposite to the first surface, the second surface having a rectangular shape having a first edge, a second edge, a third edge, and a fourth edge and a first corner, a second corner, a third corner, and a fourth corner formed by the first to fourth edges, and pad patterns disposed on the second surface of the substrate structure, wherein the second surface includes a first region including a region corresponding to the chip mounting region and in contact with the first to fourth edges of the second surface, respectively, and second regions adjacent to the first to fourth corners of the second surface, respectively and spaced apart from each other by the first region, wherein the pad patterns include first pad patterns disposed in the first region and surface-treated with a nickel/gold (Ni/Au) layer, and second pad patterns disposed in the second regions and surface-treated with an organic solderability preservative.

A semiconductor package includes a laminate package substrate, first and second power transistor dies embedded within the laminate package substrate, a driver die embedded within the laminate package substrate, a plurality of I/O routings electrically connected with I/O terminals of the driver die, a switching signal pad electrically connected with a second load terminal of the first power transistor die and a first load terminal of the second power transistor die, and a shielding pad that is configured to electrically shield at least one of the I/O routings from the switching signal pad during operation of the first and second power transistor dies, wherein the shielding pad is exposed from the electrically insulating layer.

A method of fabricating an electronic device including fabricating a multilevel package substrate with first, second, third, and fourth levels, a semiconductor die mounted to the first level, and fabricating a conductor backed coplanar waveguide transmission line feed with an interconnect and a conductor, the interconnect including coplanar first, second, and third conductive lines extending in the first level along a first direction from respective ends to an antenna, the second and third conductive lines spaced apart from opposite sides of the first conductive line along an orthogonal second direction, and the conductor extending in the third level under the interconnect and under the antenna.