There is provided a technique including: at least one pipe heater configured to heat at least one gas pipe configured to supply a gas to a process chamber in which a substrate is processed; at least one temperature detector configured to detect a temperature of the at least one gas pipe; at least one temperature controller configured to be capable of, based on the temperature detected by the at least one temperature detector, outputting a manipulated variable indicating electric power to be supplied to the at least one pipe heater, and controlling the temperature of the at least one gas pipe to approach at least one desired setpoint; and a host controller configured to be capable of controlling start and stop of heating of the at least one gas pipe performed under the control of the at least one temperature controller.

Apparatuses for controlling gas flow are important components for delivering process gases for semiconductor fabrication. These apparatuses for controlling gas flow frequently rely on flow restrictors which can provide a known flow impedance of the process gas. In one embodiment, a flow restrictor is disclosed, the flow restrictor constructed of a plurality of layers, one or more of the layers having a flow passage therein that extends from a first aperture at a first end of the flow restrictor to a second aperture at a second end of the flow restrictor.

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a first plurality of apertures and a second plurality of apertures. The systems may include a plurality of lid stacks equal to a number of the first plurality of apertures. Each lid stack may include a choke plate seated on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture axially aligned with an associated aperture of the first plurality of apertures. The choke plate may define a second aperture axially aligned with an associated aperture of the second plurality of apertures. The choke plate may define protrusions extending from each of a top and bottom surface of the choke plate that are arranged substantially symmetrically about the first aperture.

A temperature control system of a semiconductor manufacturing device includes first and second heating media storages that respectively store low-temperature heating media and high-temperature heating media, a mixing device including a mixing valve that mixes the low-temperature heating media and the high-temperature heating media at a predetermined mixing ratio, and a control device. The mixing device provides mixed heating media to a load, and distributes recovered heating media recovered from the load to the first and second heating media storages. The control device is configured to, by performing feed-forward control and feedback control over a mixing unit temperature using a relationship model between a reference temperature representing a temperature of heating media passing through the load and the mixing unit temperature which is a temperature of heating media output by the mixing valve, control the mixing ratio such that the reference temperature has a target reference temperature.

A substrate treating apparatus includes: a spin chuck supporting a substrate; a rinse liquid supply unit supplying a rinse liquid; and a bowl member surrounding the spin chuck, wherein the bowl member includes: a first bowl including an inclined surface inclined downward in an outward direction and having an upper surface of which at least a portion has a curvature; and an upper base disposed on the first bowl, a space between the upper surface of the first bowl and a lower surface of the upper base forms a first flow passage and at least a portion of the first flow passage is formed in an arc shape along the upper surface of the first bowl, and the rinse liquid is supplied toward the inclined surface of the first bowl through the first flow passage.

Exemplary fluid delivery assemblies for a semiconductor processing system may include a liquid delivery source. The assemblies may include a heater that is fluidly coupled with an outlet of the liquid delivery source. The assemblies may include a liquid flow controller that is fluidly coupled with the liquid delivery source downstream of the heater. The assemblies may include a liquid vaporizer fluidly coupled with a downstream end of the liquid flow controller. The assemblies may include a chamber delivery line coupled with an output of the liquid vaporizer.

A substrate processing apparatus comprises: a heater unit (200) forming a heating space (S2) therein ; a processing vessel (300) including a vessel part (310) in which the heater unit (200) is disposed and having an opening (301) formed on a side thereof, and an opening/closing part provided in the vessel part (310) to open and close the opening (301) and having a door opening (331) formed therethrough ; and a damper unit (500) installed in the processing vessel (300) to cover the door opening (331) and transferring exhaust gas discharged from the heating space (S2) to the outside through the door opening (331).

A pneumatic control nozzle assembly, a substrate processing device and a control method thereof are provided. The pneumatic control nozzle assembly includes a nozzle body, a closed movable element, and a pneumatic driving part. The nozzle body includes an inlet end, an outlet end, and an internal channel. The closed movable element is movably disposed in the internal channel of the nozzle body. The pneumatic driving part is connected to the nozzle body and the closed movable element, and is configured to drive the closed movable element to perform a linear movement in the internal channel so that the nozzle body changes between an open state and a closed state. When the nozzle body is in the closed state, the closed movable element plugs the outlet end located at an end of the nozzle body.

There is provided a flow control apparatus and a flow control method that may diagnose and compensate for the span error of a mass flow controller to improve the accuracy. The flow control apparatus includes a first valve at an inlet of a fluid conduit, a second valve an outlet end of the fluid conduit, a flow controller which is disposed between the first valve and the second valve, and that includes a pressure sensor and a third valve, and a controller configured to control the first and second valves to be closed and the third valve to be open, sense a rate of decay of the pressure of the fluid using the mass flow controller, and to determine a span error of the flow controller using the rate of decay to derive a compensation value.

An apparatus for treating a substrate includes a support unit that supports the substrate and a nozzle that dispenses liquid plasma to etch a film formed on the substrate supported on the support unit.