Disclosed are a laser annealing system and a method of fabricating a semiconductor device using the same. The laser annealing system having multiple laser devices may include a stage, on which a substrate is loaded, a light source generating a plurality of laser beams to be provided to the substrate, an optical delivery system disposed between the light source and the stage and used to deliver the laser beams, a homogenizing system disposed between the optical delivery system and the stage, the homogenizing system including an array lens including a plurality of lens cells which allow the laser beams to pass therethrough and homogenize the laser beams, and an imaging optical system disposed between the homogenizing system and the stage to image the laser beams on the substrate.

A substrate processing apparatus includes: a processing module including a process container in which a substrate is processed and a substrate loading port installed at a front side of the processing module; and a utility system arranged behind the processing module. The utility system includes: a supply system that supplies a processing gas into the process container; a vacuum-exhauster arranged at a rearmost position in the utility system, and including a pump that exhausts an inside of the process container and a gantry that holds the pump in a vertical direction; and an exhaust system including an exhaust pipe that brings an exhaust port provided at a rear side of the process container into fluid communication with an intake port of the pump, and the gantry holds the pump at a predetermined height such that the intake port of the pump faces the exhaust port at a substantially same height.

The present invention relates to a substrate processing apparatus, and more particularly, the substrate processing apparatus includes a gas utility exhausting each of the reaction space and the protective space so that a pressure change process including a high-pressure process, which is in a state of a pressure higher than atmospheric pressure, and a low-pressure process that is in a state of a pressure lower than the atmospheric pressure, is performed on a plurality of substrates introduced into the reaction space.

The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a chamber body. The chamber body includes a processing volume, a plurality of gas inject passages, and an exhaust port. The apparatus includes one or more upper heat sources positioned above the processing volume, one or more lower heat sources positioned below the processing volume, and a pedestal assembly positioned in the processing volume. The apparatus includes one or more side heat sources positioned outwardly of the processing volume and configured to heat the processing volume through a side of the processing volume. The chamber body can be a dual-chamber body that includes a second processing volume, and the one or more side heat sources can be positioned outwardly of one or more of the processing volume or the second processing volume.