A substrate processing apparatus includes a substrate processing unit and a controller. The substrate processing unit is configured to perform an etching processing on one or more substrates each having a silicon nitride film and a silicon oxide film on a surface thereof with a processing liquid containing a phosphoric acid aqueous solution and a silicic acid compound. The controller is configured to control individual components of the substrate processing apparatus. The controller includes a concentration control unit configured to control a phosphoric acid concentration of the processing liquid such that etching selectivity of the silicon nitride film with respect to the silicon oxide film falls within a given range from a beginning of the etching processing to an end thereof.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit horizontally maintaining a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photo-detector for detecting an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, and wherein the processor irradiates a first laser of a first output to the substrate, and sets a second output of a second laser for irradiating the substrate to heat the substrate, based on an energy of a first reflective light reflected from the substrate by the first laser detected from the photo-detector.

A substrate processing apparatus, includes: a rotary holder configured to hold and rotate a substrate; a processing liquid supply configured to supply a processing liquid to the substrate held and rotated by the rotary holder; a heater including a heat source configured to heat the substrate or the processing liquid in contact with the substrate in a non-contact manner; a temperature measurer arranged at a position facing the rotary holder and configured to measure a temperature of a heating target object heated by the heater in a non-contact manner; and a stop controller configured to stop supply of electric power to the heater when it is determined that the temperature measured by the temperature measurer exceeds a preset temperature.

The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber, a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber, and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere.

Various technologies are described herein pertaining to electrochemical etching of a semiconductor controlled by way of a laser that emits light with an energy below a bandgap energy of the semiconductor.

An apparatus for treating a substrate includes a support unit that supports the substrate and a nozzle that dispenses liquid plasma to etch a film formed on the substrate supported on the support unit.

A fluid control device that controls a fluid supplied into a process container includes: a flow path block; and a fluid controller installed to the flow path block. The flow path block includes: a gas supply flow path including an inlet, through which the fluid is introduced, and an outlet through which the fluid flows into the process container; and a storage chamber that stores the fluid in the gas supply flow path between the inlet and the outlet. The fluid controller includes: a first valve that opens and closes the gas supply flow path between the inlet and the storage chamber; and a second valve that opens and closes the gas supply flow path between the storage chamber and the outlet.

A semiconductor manufacturing system and a method are capable of restraining a pattern on a semiconductor substrate from collapsing while performing wet etching on the semiconductor substrate. As an example, a semiconductor manufacturing system includes a first fluid reservoir that retains a first fluid generated by adding, to a first liquid, an adjusting substance for adjusting a pH. The first fluid supplier supplies the first fluid to a mixer. A second fluid supplier causes a second fluid to turn into a supercritical fluid and supplies the supercritical fluid to the mixer. A first heating mechanism houses the mixer and heats the mixer. A second heating mechanism heats a chamber capable of housing a substrate. A fluid mixture supplier supplies the second heating mechanism with a fluid mixture into which the first fluid and the supercritical fluid are mixed in the mixer.

A semiconductor memory device includes a first region where a plurality of conductive layers, a plurality of insulating layers, a semiconductor layer, and a gate insulating layer are formed and a second region different from the first region above a substrate. The plurality of conductive layers include a plurality of first conductive layers and a plurality of second conductive layers. The semiconductor memory device includes a plurality of first films different from the first conductive layers disposed in same layers as the plurality of first conductive layers in the second region and a plurality of second films different from the second conductive layers and the first films disposed in same layers as the plurality of second conductive layers in the second region.

A wet-processing dark laboratory for scientific research includes a laboratory body, a wet-processing equipment, a transfer robot, a sample supplying and storing apparatus, a chemical supplying and storing apparatus, and a control apparatus. The laboratory body is configured to provide a clean space. The transfer robot includes a moving device, a mechanical arm device, at least one end effector, and an accompanying device. The accompanying device can move with the moving device and provide a temporary storage space. The mechanical arm device is mounted on the moving device. The at least one end effector is mounted on the mechanical arm device for grasping a semiconductor sample and/or a chemical tank. The above design enables 24/7 experiments conduction without the need for human presence, which forms a dark laboratory.