The present disclosure provides a semiconductor structure, including: a semiconductor device layer including a first surface and a second surface, wherein the first surface is at a front side of the semiconductor device layer, and the second surface is at a backside of the semiconductor device layer; an insulating layer above the second surface of the semiconductor device; and a through-silicon via (TSV) traversing the insulating layer. Associated manufacturing methods of the same are also provided.

In an embodiment, a package including: a redistribution structure including a first dielectric layer and a first conductive element disposed in the first dielectric layer; a first semiconductor device bonded to the redistribution structure, wherein the first semiconductor device includes a first corner; and an underfill disposed over the redistribution structure and including a first protrusion extending into the first dielectric layer of the redistribution structure, wherein the first protrusion of the underfill overlaps the first corner of the first semiconductor device in a plan view.

A method for manufacturing a semiconductor device, the method including irradiating a laminated body for temporary fixing with light and thereby separating the semiconductor member from a resin layer for temporary fixing. The laminated body for temporary fixing is formed by a method including: laminating a film material for temporary fixing on a light-absorbing layer in a direction in which a first principal surface is in contact with the light-absorbing layer; and peeling off a second release film from the film material for temporary fixing to expose a second principal surface. When the maximum values of logarithmic decrements of the first principal surface and the second principal surface of the resin layer for temporary fixing in rigid pendulum measurement are designated as .sub.max1 and .sub.max2, respectively, .sub.max2 is smaller than .sub.max1.

Suppressing deflection and reducing weight are to be achieved. A supporting glass substrate has a ratio of a Young's modulus (GPa) to a density (g/cm.sup.3) that is 37.0 (GPa.Math.cm.sup.3/g) or more and the ratio has a value larger than a ratio calculation value, the ratio calculation value being a ratio of a Young's modulus (GPa) calculated from a composition to a density (g/cm.sup.3). The ratio calculation value is represented by the following expression: =2.Math.{(V.sub.i.Math.G.sub.i)/M.sub.i.Math.X.sub.i}, where, in the expression, V.sub.i is a filling parameter of a metal oxide contained in the supporting glass substrate, G.sub.i is a dissociation energy of a metal oxide contained in the supporting glass substrate, M.sub.i is a molecular weight of a metal oxide contained in the supporting glass substrate, and X.sub.i is a molar ratio of a metal oxide contained in the supporting glass substrate.

Electronic devices are formed on donor substrates and transferred to carrier substrates by forming bonding regions on the electronic devices and bonding the bonding regions to a carrier substrate. The transfer process may include forming anchors and removing sacrificial regions.

A mass transfer device includes at least one transfer cavity. Each transfer cavity is configured to accommodate a plurality of micro light-emitting diodes. Each transfer cavity includes a bottom plate and a cavity wall connecting the bottom plate. The bottom plate defines a plurality of through holes spaced apart from each other. The transfer cavity is used to transfer the plurality of micro light-emitting diodes to the array substrate of a display panel through the plurality of through holes.

Methods, systems, and devices for manufacturing technique for mechanical debonding of a carrier wafer from other structures in a stacked semiconductor system are described. The carrier wafer may include a first bonding layer that includes a first plurality of cavities. The stacked semiconductor system may also include a device wafer with a second bonding layer that is fusion bonded with the first bonding layer of the carrier wafer. The second bonding layer of the device wafer may include a second plurality of cavities.

Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.

A method of manufacturing a light-emitting unit includes disposing a plurality of light-emitting diode (LED) chips on a carrier, wherein gaps are between the LED chips. The method includes forming a film on the LED chips and the carrier, and transferring at least one of the LED chips onto a first substrate, wherein the film is disconnected in the gaps adjacent to the at least one LED chip during the transferring the at least one of the LED chips onto the first substrate.

A dry adhesive microfiber array comprising a plurality of fibers with enlarged tips, where the dry adhesive is capable of adhering to a surface of a silicon wafer and/or carrier, in which the dry adhesive can be debonded without the use of chemicals or heat and does not leave a residue on the surface of the wafer, and, a liquid can be introduced to the interface between the dry adhesive and semiconductor device to adjust the force of adhesion.