A package structure includes a circuit substrate, a semiconductor package, a lid structure, a passive device and a barrier structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The lid structure is disposed on the circuit substrate covering the semiconductor package. The lid structure is attached to the circuit substrate through an adhesive material. The passive device is disposed on the circuit substrate in between the semiconductor package and the lid structure. The barrier structure is separating the passive device from the lid structure and the adhesive material, and the barrier structure is in contact with the adhesive material.

A device includes a redistribution layer (RDL) substrate. The device also includes a passive component in the RDL substrate proximate a first surface of the RDL substrate. The device further includes a first die coupled to a second surface of the RDL substrate, opposite the first surface of the RDL substrate.

A semiconductor package includes a semiconductor die, a device layer over the semiconductor die and including an optical device, an insulator layer over the device layer, a buffer layer over the insulator layer, an etch stop layer between the device layer and the insulator layer, a connective terminal, and a bonding via passing through the device layer and electrically connecting the semiconductor die to the connective terminal. The conductive terminal passes through the etch stop layer, the insulator layer, and the buffer layer. The conductive terminal is in direct contact with the etch stop layer.

A method of manufacturing a semiconductor package of stacked semiconductor chips includes forming a reverse wire bond by bonding one end of a reverse wire to a chip pad of the second-highest semiconductor chip of the stacked semiconductor chips and connecting the other end of the reverse wire to a conductive bump on a chip pad of the uppermost semiconductor chip of the stacked semiconductor chips. The method also includes molding the stacked semiconductor chips with the reverse wire bond using a mold layer. The method further includes processing the mold layer to expose the conductive bump and the other end of the reverse wire in the reverse wire bond through an upper surface of the mold layer.

Disclosed is a semiconductor package device comprising a lower redistribution substrate, a first semiconductor chip on the lower redistribution substrate, vertical structures on the lower redistribution substrate, and a first molding member on the lower redistribution substrate and on the first semiconductor chip and the vertical structures. The vertical structure includes a first post having a first diameter, a second post on the first post and having a second diameter, and a bonding pad on the second post opposite the first post and having a third diameter. The first, second, and third diameters are different from each other. The third diameter is greater than the second diameter.

A multiple die package is described that has an embedded bridge to connect the dies. One example is a microelectronic package that includes a package substrate, a silicon bridge embedded in the substrate, a first interconnect having a first plurality of contacts at a first location of the silicon bridge, a second interconnect having a second plurality of contacts at a second location of the silicon bridge, a third interconnect having a third plurality of contacts at a third location of the silicon bridge, and an electrically conductive line in the silicon bridge connecting a contact of the first interconnect, a contact of the second interconnect, and a contact of the third interconnect each to each other.

The present disclosure relates to systems and methods for fabricating semiconductor packages, and more particularly, for forming features in semiconductor packages by laser ablation. In one embodiment, the laser systems and methods described herein can be utilized to pattern a substrate to be utilized as a package frame for a semiconductor package having one or more interconnections formed therethrough and/or one or more semiconductor dies disposed therein. The laser systems described herein can produce tunable laser beams for forming features in a substrate or other package structure. Specifically, frequency, pulse width, pulse shape, and pulse energy of laser beams are tunable based on desired sizes of patterned features and on the material in which the patterned features are formed. The adjustability of the laser beams enables rapid and accurate formation of features in semiconductor substrates and packages with controlled depth and topography.

A package structure and a formation method are provided. The method includes forming multiple patterned material elements over a carrier substrate, and the patterned material elements are more thermal conductive than copper. The method also includes forming a protective layer laterally surrounding each of the patterned material elements. The method further includes bonding a chip-containing structure to a first patterned material element of the patterned material elements through dielectric-to-dielectric bonding and metal-to-metal bonding.

A method includes forming a package substrate comprising forming through-openings in a glass substrate, filling the through-openings to form through-vias in the glass substrate, forming a first interconnect structure underlying the glass substrate, and forming a second interconnect structure overlying the glass substrate. The method further includes forming an interposer over the package substrate, and bonding package components over and electrically connected to the package substrate through the interposer.

A method of making an interconnect substrate, comprising disposing an embedded component and at least one tracking identifier in a substrate core, and planarizing the substrate core to form a planar surface, forming a conductive layer over a frontside planar surface, disposing a layer of dielectric over the frontside planar surface, the embedded component, and the conductive layer, rotating the substrate core such that a back surface of the substrate core is configured for processing, and forming a conductive layer over the back surface of the substrate core.