A semiconductor package including one or more dam structures and the method of forming are provided. A semiconductor package may include an interposer, a semiconductor die bonded to a first side of the interposer, an encapsulant on the first side of the interposer encircling the semiconductor die, a substrate bonded to the a second side of the interposer, an underfill between the interposer and the substrate, and one or more of dam structures on the substrate. The one or more dam structures may be disposed adjacent respective corners of the interposer and may be in direct contact with the underfill. The coefficient of thermal expansion of the one or more of dam structures may be smaller than the coefficient of thermal expansion of the underfill.

A composite package may have a feature for enhancing thermal dissipation. The feature may include an array of metal pillar located on a backside a semiconductor die. Alternatively, the feature may include a cavity, to which a backside surface of a semiconductor die is exposed and which is laterally surrounded by a portion of a molding compound die frame.

A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, an electronic component, an encapsulant, and a dam structure. The substrate has a lower surface and an upper surface opposite to the first surface. The electronic component is disposed on the upper surface of the substrate. The encapsulant is disposed on the upper surface of the substrate and has a portion penetrating the substrate. The dam structure vertically overlaps the portion of the encapsulant.

A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, an electronic component, an encapsulant, and a dam structure. The substrate has a lower surface and an upper surface opposite to the first surface. The electronic component is disposed on the upper surface of the substrate. The encapsulant is disposed on the upper surface of the substrate and has a portion penetrating the substrate. The dam structure vertically overlaps the portion of the encapsulant.

A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

To improve performance of a semiconductor device. A semiconductor device includes a wiring substrate, a semiconductor chip mounted on a first upper surface of the wiring substrate, an electronic component mounted on the first upper surface, and a stiffener ring fixed to the first upper surface. The stiffener ring includes a first portion arranged to continuously surround a periphery of the semiconductor chip in plan view and adhering to the first upper surface of the wiring substrate, and a second portion connected to the first portion and arranged at a position spaced away from the first upper surface of the wiring substrate in plan view. The second portion of the stiffener ring partially overlaps the electronic component.

The technology of this application relates to a switching power module that includes a substrate, a die embedded in the substrate, and a packaging layer. The packaging layer covers an integrated circuit layout layer of the die. The packaging layer packages the integrated circuit layout layer of the die, the die includes a composite material layer covering the integrated circuit layout layer, and the composite material layer includes at least two material layers that have different functions. The at least two material layers include a first material layer covering the integrated circuit layout layer, the first material layer is a mixed layer of undoped silicate glass and tetraethyl orthosilicate, and the first material layer is filled in a gap between metal protrusions of the integrated circuit layout layer, thereby improving an isolation effect between the metal protrusions. The mixed layer of the undoped silicate glass and the tetraethyl orthosilicate has a good thermal stress effect.

Provided are a package structure and a method of forming the same. The package structure includes a package substrate, a first die, and a stiffener ring. The first die is disposed on the package substrate and has a first sidewall and a second sidewall opposite to each other. The stiffener ring is disposed on the package substrate to surround the first die. The stiffener ring has an inner sidewall facing the first die, and the inner sidewall at least has a slant sidewall facing the first sidewall of the first die.

An embodiment semiconductor package assembly may include an interposer, an integrated passive device electrically coupled to a first side of the interposer, an underfill material portion formed between the integrated passive device and the first side of the interposer, and a dam protruding from the first side of the interposer and configured to constrain a spatial extent of the underfill material portion. The dam may include a first portion extending above a surface of the first side of the interposer and a second portion embedded below the surface of the first side of the interposer. The dam may be formed in a dielectric layer that also includes a component of a redistribution interconnect structure. The dam may further be electrically isolated from the redistribution interconnect structure and may be configured to form a connected or disconnected boundary of a two-dimensional region of the first side of the interposer.

An embodiment semiconductor package assembly may include an interposer, an integrated passive device electrically coupled to a first side of the interposer, an underfill material portion formed between the integrated passive device and the first side of the interposer, and a dam protruding from the first side of the interposer and configured to constrain a spatial extent of the underfill material portion. The dam may include a first portion extending above a surface of the first side of the interposer and a second portion embedded below the surface of the first side of the interposer. The dam may be formed in a dielectric layer that also includes a component of a redistribution interconnect structure. The dam may further be electrically isolated from the redistribution interconnect structure and may be configured to form a connected or disconnected boundary of a two-dimensional region of the first side of the interposer.