Some modular heat-transfer systems can have an array of at least one heat-transfer element being configured to transfer heat to a working fluid from an operable element. A manifold module can have a distribution manifold and a collection manifold. A decouplable inlet coupler can be configured to fluidicly couple the distribution manifold to a respective heat-transfer element. A decouplable outlet coupler can be configured to fluidicly couple the respective heat-transfer element to the collection manifold. An environmental coupler can be configured to receive the working fluid from the collection manifold, to transfer heat to an environmental fluid from the working fluid or to transfer heat from an environmental fluid to the working fluid, and to discharge the working fluid to the distribution manifold.

A semiconductor device includes a chip and a cooling apparatus dissipating heat generated in the chip during an operation of the chip, the cooling apparatus including a base, a plurality of microchannels, and a manifold disposed over the plurality of microchannels. A method of fabricating the semiconductor device includes increasing a thermal conductivity of the base of the cooling apparatus, or a thermal conductivity of the chip, or both, and directly bonding the cooling apparatus to the chip.

The present invention relates to a method of connecting a cooler module (4) to a metal plate by a sintering process, wherein the cooler module (4) comprises a metallic housing (5) having a coolant inlet (7), a coolant outlet (8) and a first housing side (9), and within the housing (5) a coolant flow structure (6), and wherein the method comprises the steps of: introducing at least one glycol between the coolant flow structure (6), applying a sinter paste and sintering to join the metal plate and the first housing side (9) under pressure and temperature.

A power conversion device has heat generating components mounted to a base part, which is a component mounting part, side by side, and a cooling part that is integrally provided to the base part and cools the heat generating components. The cooling part has a flow passage formation part that forms a refrigerant flow passage in a direction in which the heat generating components are arranged, and a fin that extends from an upstream side to a downstream side in the refrigerant flow passage. The heat generating portion on the upstream side and the heat generating portion on the downstream side of the heat generating portions in the cooling part differ in fin structure, and at the heat generating portion on the downstream side, the number of fins separated from each other in a refrigerant circulation direction is larger than that at the heat generating portion on the upstream side.

The purpose of this invention is to provide a semiconductor device that prevents defects in semiconductor elements caused by differences in thermal expansion and maintains low electrical resistance by directly or indirectly laminating an FeNi alloy metal layer onto the front-surface or back-surface electrodes of the semiconductor element. In this invention, an FeNi alloy metal layer is directly or indirectly applied on the surface electrodes of the semiconductor element, and the semiconductor element is connected to a conductor through the FeNi alloy metal layer. Depending on the application, the Ni content of the FeNi alloy metal layer is set within the range of 36% to 45% by weight, and the thickness of the FeNi alloy metal layer is set within the range of 2 m to 20 m.

A system and a method for a semiconductor integrated package are disclosed. An interposer has a top surface and a bottom surface. A first circuit layer is disposed on the top surface by a first bonding and has at least one first circuit. A second circuit layer is disposed on the first circuit layer by a second bonding and has at least one second circuit. A thermal layer having an embedded liquid cooling channel is bonded on the second circuit layer.

A panel-level semiconductor package structure is provided. The panel-level semiconductor package structure includes a panel-level substrate structure and at least one wafer-level package structure. The panel-level substrate structure has a first side and a second side opposite to the first side. The wafer-level package structure is bonded over the panel-level substrate structure. Each of the wafer-level package structures includes a first redistribution layer (RDL) over the elastomeric connector and a plurality of first semiconductor devices laterally disposed over the first RDL. A method for manufacturing a panel-level substrate structure is also provided.

A package structure includes a package substrate. Numerous leads penetrate the package substrate. A top plate is disposed on the package substrate. An extension component extends from the top plate to the package substrate. Four side plates are disposed between the package substrate and the top plate. A die is disposed on the package substrate. The die includes a first surface and a second surface, and the first surface and the second surface are opposite. The extension component is bonded to the first surface of the die through a thermal conductive adhesive. Numerous conductive terminals are disposed on the die and exposed through the first surface. Numerous wires are disposed on the package substrate. Each wire is connected to one of the leads and one of the conductive terminals.

An immersive cooling system is described. The system includes an immersive cooling container, including: a first reservoir; a second reservoir; numerous slots, each configured to hold a casing; a reservoir connector corresponding to each slot, and configured to provide fluid communication with the first reservoir; and a pump configured to convey a dielectric immersion cooling liquid from the second reservoir to the first reservoir. The immersive cooling system also includes a casing, configured to contain an electronic device and to fit within a slot of the container. The casing includes an inlet configured to be in fluid communication with the reservoir connector of the slot within which the casing is disposed to facilitate flow of the cooling liquid into an interior of the casing through the reservoir connector and an outlet configured to facilitate flow of the cooling liquid from the interior of the casing into the second reservoir.

A power module includes: a first substrate having an outer surface and an inner surface; a semiconductor die coupled to the inner surface of the first substrate; a second substrate having an outer surface and an inner surface, the semiconductor die being coupled to the inner surface of the second substrate; and a flex circuit coupled to the semiconductor die.