A method includes bonding a first plurality of device dies onto a wafer, wherein the wafer includes a second plurality of device dies, with each of the first plurality of device dies bonded to one of the second plurality of device dies. The wafer is then sawed to form a die stack, wherein the die stack includes a first device die from the first plurality of device dies and a second device die from the second plurality of device dies. The method further includes bonding the die stack over a package substrate.

A three-dimensional (3D) laminated chip that includes a first semiconductor chip including a first through electrode disposed therein. A second semiconductor chip is arranged horizontally adjacent to the first semiconductor chip. A third semiconductor chip is arranged on the first semiconductor chip and the second semiconductor chip. A size of the third semiconductor chip is greater than a size of the first semiconductor chip.

An example memory device includes a logic die configured to output a control signal based on temperature data, and a first core die. The first core die includes a first plurality of memory cells configured to store data, a first temperature sensor configured to measure a temperature of the first plurality of memory cells and to output first temperature data based on the temperature of the first plurality of memory cells, and a first heating circuit configured to generate heat based on the control signal and the first temperature data.

Provided is a semiconductor package including a first semiconductor device, an encapsulant surrounding the first semiconductor device, an upper redistribution structure provided on the encapsulant, and a heat dissipation block provided on the upper redistribution structure. The heat dissipation block includes a first block surface facing a top surface of the upper redistribution structure, the heat dissipation block includes a first protrusion on the first block surface, a first concave portion corresponding to the first protrusion is provided on the top surface of the upper redistribution structure, the first protrusion is located in the first concave portion, and a heat transfer layer is provided between the heat dissipation block and the top surface of the upper redistribution structure.

A system and a method for a semiconductor integrated package are disclosed. An interposer has a top surface and a bottom surface. A first circuit layer is disposed on the top surface by a first bonding and has at least one first circuit. A second circuit layer is disposed on the first circuit layer by a second bonding and has at least one second circuit. A thermal layer having an embedded liquid cooling channel is bonded on the second circuit layer.

A package structure includes a first dielectric layer disposed on a first patterned circuit layer, a first conductive via in the first dielectric layer and electrically connected to the first patterned circuit layer, a circuit layer on the first dielectric layer, a second dielectric layer on the first dielectric layer and covering the circuit layer, a second patterned circuit layer on the second dielectric layer and including conductive features, a chip on the conductive features, and a molding layer disposed on the second dielectric layer and encapsulating the chip. The circuit layer includes a plurality of portions separated from each other and including a first portion and a second portion. The number of pads corresponding to the first portion is different from that of pads corresponding to the second portion. An orthographic projection of each portion overlaps orthographic projections of at least two of the conductive features.

Disclosed is a semiconductor package comprising a redistribution substrate and a semiconductor chip on the redistribution substrate. The redistribution substrate includes a plurality of first conductive patterns including a pair of first signal patterns that are adjacent to each other, and a plurality of second conductive patterns on surfaces of the first conductive patterns and coupled to the first conductive patterns. The second conductive patterns include a ground pattern insulated from the pair of first signal patterns. The ground pattern has an opening that penetrates the ground pattern. When viewed in plan, the pair of first signal patterns overlap the opening.

A 3D device including: a first level including first transistors and a first interconnect; a second level including second transistors, the second level overlaying the first level; and at least four electronic circuit units (ECUs), where each of the ECUs include a first circuit, the first circuit including a portion of the first transistors, where each of the ECUs includes a second circuit, the second circuit including a portion of the second transistors, where each of the ECUs includes a first vertical bus, where the first vertical bus provides electrical connections between the first circuit and the second circuit, where each of the ECUs includes at least one processor and at least one memory array, where the second level is bonded to the first level, and where the bonded includes oxide to oxide bonding regions and metal to metal bonding regions.

A power electronics module, having a PCB having power semiconductors arranged on connecting regions of an uppermost layer of said PCB, wherein the PCB has a preset dimension to arrange a preset maximum number of power semiconductors thereon. A lead frame arranged above the power semiconductors provides three-dimensional power and control routing, and includes a drain-source connection to connect to a drain-source contact of the PCB, and a load-source connection opposite the drain-source connection via the power semiconductors that is formed from a plurality of subregions, each of which can be brought into electrical contact with the power semiconductors, and a gate- and kelvin-source terminal, which are arranged above the load-source connection and have been brought into electrical contact with the power semiconductors. At least one dummy chip consisting of an electrically nonconductive material is arranged on each of the connecting regions that are not populated by power semiconductors.

A 3D semiconductor device including: a first level including a first single crystal layer and first transistors, which each include a single crystal channel; a first metal layer with an overlaying second metal layer; a second level including second transistors, overlaying the first level; a third level including third transistors, overlaying the second level; a fourth level including fourth transistors, overlaying the third level, where the second level includes first memory cells, where each of the first memory cells includes at least one of the second transistors, where the fourth level includes second memory cells, where each of the second memory cells includes at least one of the fourth transistors, where the first level includes memory control circuits, where second memory cells include at least four memory arrays, each of the four memory arrays are independently controlled, and at least one of the second transistors includes a metal gate.