Methods and apparatus for bonding chiplets to substrates are provided herein. In some embodiments, a multi-chamber processing tool for processing substrates includes: an equipment front end module (EFEM) having one or more loadports for receiving one or more types of substrates; and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM, wherein each of the plurality of automation modules include a transfer chamber and one or more process chambers coupled to the transfer chamber, wherein the transfer chamber includes a buffer, and wherein the transfer chamber includes a transfer robot configured to transfer the one or more types of substrates, wherein at least one of the plurality of automation modules include a bonder chamber and at least one of the plurality of automation modules include a wet clean chamber.

A process flow for bonding a die to a substrate incorporates defectivity risk management and yield promotion by reducing flow complexity. In some embodiments, the process flow may include a radiation process on a component substrate to weaken an adhesive bonding of dies from a surface of the component substrate, a first wet clean process on the component substrate after the radiation process to clean die bonding surfaces, eject and pick processes after performing the first wet clean process to remove dies from the component substrate for bonding to a substrate, a plasma activation process on the substrate, a second wet clean process after the plasma activation process on the substrate to clean a substrate bonding surface of the substrate, and a hybrid bonding process to bond die bonding surfaces of the dies to the substrate bonding surface of the substrate.

A method for forming a package structure is provided. The method includes transporting a first package component into a processing chamber. The method includes positioning the first package component on a chuck table. The method includes using the chuck table to heat the first package component. The method includes holding a second package component with a bonding head. The bonding head communicates with a plurality of vacuum devices via a plurality of vacuum tubes, and the vacuum devices each operate independently. The method also includes bonding the first package component and the second package component in the processing chamber to form the package structure.

A solder ball attaching apparatus includes a working die, having an internal space maintained in a vacuum state, and a plurality of lifting members installed on the working die to be movable upwardly and downwardly. The working die may be provided with an upper plate on which the lifting members are installed. The upper plate may be provided with an insertion groove, into which an upper end portion of the lifting member is inserted when the lifting member is lowered, and a locking groove into which a lower end portion of the lifting member is inserted when the lifting member is raised. The lifting member may be lowered by a chip when the chip is seated on the lifting member and may be raised by elastic restoring force when the chip is removed.

An apparatus and method for debonding a pair of bonded wafers are disclosed herein. In some embodiments, the debonding apparatus, comprises: a wafer chuck having a preset maximum lateral dimension and configured to rotate the pair of bonded wafers attached to a top surface of the wafer chuck, a pair of circular plate separating blades including a first separating blade and a second separating blade arranged diametrically opposite to each other at edges of the pair of bonded wafers, wherein the first and the second separating blades are inserted between a first and a second wafers of the pair of bonded wafers, and at least two pulling heads configured to pull the second wafer upwardly so as to debond the second wafer from the first wafer.

A method of making an inverter comprising: a substrate; a first transistor in thermal contact with the substrate, wherein the transistor comprises a gate; the substrate sintered to a heat sink through a sintered layer; an encapsulant that at least partially encapsulates the first transistor; and a Kelvin connection to the transistor gate.

A die flip bonding device includes a substrate holder configured to provide a substrate including a plurality of die stacks having a gap in a first direction, the plurality of die stacks being wire-bonded; a first moving body configured to move to a first position to pick up a first uppermost die of a first die stack, among the plurality of die stacks, and then half-flip the first uppermost die in the first direction to move the first uppermost die to a second position; and a second moving body configured to move to the second position to receive the first uppermost die of the first die stack from the first moving body, and after the movement of the first moving body, half-flip the first uppermost die of the first die stack in the first direction at the second position to move the first uppermost die to a third position.

A method and an apparatus for forming an electronic device is provided. The method comprises: providing a substrate; disposing at least one electronic component on the substrate via a solder paste; applying an inert atmosphere to the substrate and the solder paste, wherein the inert atmosphere has a reduced oxygen partial pressure compared with air atmosphere; and reflowing the solder paste by a heating process within the inert atmosphere to reduce voids formed within the solder paste during the reflowing of the solder paste.

A semiconductor device has a substrate. The substrate is disposed on a quartz carrier. An electrical component is disposed over the substrate opposite the quartz carrier. An epoxy-solder paste bump is disposed between the substrate and electrical component. The epoxy-solder paste bump comprises an epoxy and a solder powder disposed in the epoxy. Laser energy is applied to a surface of the substrate through the quartz carrier. The laser energy is converted to thermal energy to reflow the solder powder and cure the epoxy.

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a bond head assembly including a bonding tool configured for bonding the semiconductor element to the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas to a bonding area of the bonding system. The reducing gas delivery system includes a manifold. The manifold includes a lower surface defining (i) a reducing gas port for providing the reducing gas to the bonding area, and (ii) an exhaust port for removing a reaction product from the bonding area.