A pixel-driving circuit for driving a digital display device, the pixel-driving circuit formed on an interposer that is electrically connected to a display substrate through a plurality of bumps. The pixel-driving circuit comprises a row terminal connected to a row bump connected to a row line of a row-driving circuit among the plurality of bumps, a column terminal connected to a column bump connected to a column line of a column-driving circuit among the plurality of bumps, a common element that shares at least one of the row terminal or the column terminal for L (L is a positive integer greater than or equal to 2) display pixels formed on the interposer, and L pixel individual elements connected to the common element and driving a plurality of light emitters included in each of the L display pixels.

A semiconductor package includes a connection structure having first and second surfaces opposing each other and including a first redistribution layer; a semiconductor chip disposed on the first surface of the connection structure and including connection pads connected to the first redistribution layer; an encapsulant disposed on the first surface of the connection structure and encapsulating the semiconductor chip; and a second redistribution layer disposed on the encapsulant; a wiring structure connecting the first and second redistribution layers to each other and extending in a stacking direction; and a heat dissipation element disposed on at least a portion of the second surface of the connection structure.

An electronic device includes a semiconductor die having a side, and a cap including a first portion spaced apart from the side of the semiconductor die to define a cavity over a portion of the side of the semiconductor die, and a second portion attached to the side of the semiconductor die and extending from the side of the semiconductor die to the first portion, wherein one of the first and second portions has an opening.

The present disclosure relates to power modules, methods for manufacturing same, and electrical systems. A power module is provided, comprising one or more power module units each comprising: an intra-cooling device formed of an insulating material; a first metal layer disposed on a top surface of the intra-cooling device; a first chip attached on the first metal layer, the first chip being electrically coupled by the first metal layer and at least one of a first conductive clip and a first conductive wire attached on the first chip and the first metal layer; a second metal layer disposed on a bottom surface of the intra-cooling device; and a second chip attached on the second metal layer, the second chip being electrically coupled by the second metal layer and at least one of a second conductive clip and a second conductive wire attached on the second chip and the second metal layer.

The electronic device includes a first electronic component, a second electronic component, a sealing resin covering the first/second electronic components, first, second, third and fourth leads, a first die pad supporting the first electronic component, and a second die pad supporting the second electronic component. The sealing resin has resin side surfaces facing in orthogonal directions perpendicular to a thickness direction of the sealing resin. A first outer portion of the first lead, a second outer portion of the second lead and a third outer portion of the third lead are exposed from one or more resin side surfaces different from the resin side surface from which a fourth outer portion of the fourth lead is exposed.

To manufacture a semiconductor device, a first heat treatment for curing a first adhesive material of a conductive paste type is performed, after a semiconductor chip is mounted on a die pad of a lead frame via the first adhesive material. After that, a metal plate is disposed on a pad of the semiconductor chip such that the metal plate faces the pad of the semiconductor chip via a second adhesive material of a conductive paste type, and a second heat treatment is performed for curing each of the first adhesive material and the second adhesive material. A time of the first heat treatment is less than a time of the second heat treatment. After the first adhesive material is cured by the first heat treatment, the first adhesive material is further cured by the second heat treatment.

A semiconductor package includes a plurality of leads, each lead having a planar portion and a non-planar portion, in which: the planar portion has a first side and a second side opposing the first side, and the non-planar portion is at an angle with the planar portion. The semiconductor package includes a first device mechanically coupled to the first side of the planar portion with first interconnects and a second device mechanically coupled to the second side of the planar portion with second interconnects. The semiconductor package includes mold compound covering the first device and the second device, in which: a first mold overlay is on a side of the first device distant from the leads, and a second mold overlay is on a side of the second device distant from to the leads.

A semiconductor device includes: a semiconductor element; an island lead on which the semiconductor element is mounted; a terminal lead electrically connected to the semiconductor element; a wire connected to the semiconductor element and the terminal lead; and a sealing resin covering the semiconductor element, the island lead, the terminal lead, and the wire. The terminal lead includes a base member having an obverse surface facing in a thickness direction of the terminal lead, and a metal layer located between the obverse surface and the wire. The base member has a greater bonding strength with respect to the sealing resin than the metal layer. The obverse surface includes an opposing side facing the island lead. The obverse surface includes a first portion that includes at least a portion of the opposing side and that is exposed from the metal layer.

An IC package structure with connections is provided in the present disclosure, including a die bonded to a leadframe, a plurality of connections bonded to the leadframe, a molding compound formed on the leadframe, a metal layer formed on the molding compound and electrically connecting with the connections, and an electronic component mounted on the metal layer.

A die of the package device is covered by an encapsulation layer, a plurality of lead portions are configured on the bottom surface of the encapsulation layer, a side portion of each lead portion is also exposed on a side surface of the encapsulation layer, and thereby the package device is used as a side-wettable package device; wherein, in a process of manufacturing the package device, a conductive electroplated conducting layer is formed on the surface of the encapsulation layer, and the electroplated conducting layer is used to conduct electric power required during an electroplating process. After the electroplating process is completed, the electroplated conducting layer can be used as a heat dissipation layer for the package device. The heat dissipation layer completely covers the surface of the package device so as to increase heat dissipation area and to be attached by a heat sink.