A semiconductor module arrangement includes: a housing; a substrate arranged in or forming a bottom of the housing; a bus bar including a first end and a second end opposite the first end, the first end being arranged inside the housing and the second end extending to outside of the housing; and at least one connecting element mechanically and electrically coupled to a top surface of the substrate. The first end of the bus bar is arranged distant from the substrate in a vertical direction. The vertical direction is a direction perpendicular to the top surface of the substrate. The first end of the bus bar is electrically coupled to at least one of the at least one connecting element by one or more electrical connections.

A heat sink, a thermal module, and an electronic device are provided. The heat sink includes a base and a plurality of curved fins arranged in parallel on the base. Each curved fin has a plurality of wave peaks, with a pitch defined between any two adjacent wave peaks, and at least two of the plurality of wave peaks are different.

Provided is a semiconductor package that may improve heat dissipation performance, including a package substrate on a system substrate, in which the package substrate includes a first surface and a second surface opposite the first surface, the second surface facing the system substrate, a connection member electrically connecting the system substrate and the package substrate, a first semiconductor chip on the first surface of the package substrate, a second semiconductor chip on the second surface of the package substrate, and electrically connected to the first semiconductor chip, and a heat transfer member between the second semiconductor chip and the system substrate.

A clip-integrated power module, a method thereof, and a clip-integrated power system are provided. The clip-integrated power module includes a negative temperature coefficient resistance (NTC) to monitor a temperature of a power module, a shunt resistor to monitor current of the power module, and a clip integrally formed with the NTC and the shunt resistor to electrically connect chips within the power module.

A power module includes a first end power semiconductor element and a second end power semiconductor element. A first sum is a sum of a path length between the gate electrode of the first end power semiconductor element and a first control terminal and a path length between the source electrode of the first end power semiconductor element and a first detection terminal. A second sum is a sum of a path length between the gate electrode of the second end power semiconductor element and the first control terminal and a path length between the source electrode of the second end power semiconductor element and the first detection terminal. The power module includes a first control layer connected to the gate electrode. The first control layer includes a first detour portion that detours the path to reduce a difference between the first sum and the second sum.

Disclosed are an intelligent power module and a manufacturing method thereof, which relate to the technical field of electronic devices. The intelligent power module includes a substrate, wherein a chip and a plurality of conductive pins are arranged on the substrate, one end of each of the conductive pins is connected to the chip, and a solder pin is formed at an end portion of the other end of the conductive pin; and an external pin frame, including a plurality of leads, and a connection structure is formed at an end portion of one end of each of the lead; and the connection structure includes a connection portion, and support portions, wherein an arrangement direction of the support portions is the same as that of the solder pins, an accommodation space is formed between the two support portions, and the solder pin is located between the two support portions.

Embodiments of the present disclosure relate to a semiconductor package, a method of forming the package and an electronic device. For example, the semiconductor package may comprise a first substrate assembly comprising a first surface and a second surface opposite the first surface. The semiconductor package may also comprise one or more chips connected or coupled to the first surface of the first substrate assembly by a first thermally and electrically conductive connecting material. In addition, the semiconductor package further comprises a second substrate assembly comprising a third surface and a fourth surface opposite the third surface, the third surface and the first surface being arranged to face each other, and the third surface being connected to one or more chips by a second thermally and electrically conductive connecting material. At least one of the first surface and the third surface is shaped to have a stepped pattern to match a surface of the one or more chips. Embodiments of the present disclosure may at least simplify the double-sided heat dissipation structure and improve the heat dissipation effect of the chip.

A semiconductor module includes a laminate substrate including an insulating plate and first and second circuit boards on an upper surface of the insulating plate, the first semiconductor device on an upper surface of the first circuit board, a first main terminal, and a first metal wiring board that electrically connects the first semiconductor device to the first main terminal. The first metal wiring board has a first bonding section bonded to an upper surface electrode of the first semiconductor device, a second bonding section bonded to an upper surface of the second circuit board, a first coupling section that couples the first bonding section to the second bonding section, a first raised section that rises upward from an end portion of the second bonding section. The first raised section has an upper end that is electrically connected to the first main terminal.

An object is to provide a semiconductor module capable achieving both a heat radiation property and an insulation property. A semiconductor module includes: a substrate having a main surface and a main surface on a side opposite to the main surface; a semiconductor device mounted on the main surface; and a heat sink attached to the main surface via an insulation sheet having a thermal conductivity, wherein the substrate includes a through hole passing from the main surface to the main surface, the semiconductor device includes a plurality of electrodes exposed from a surface facing the main surface and a protrusion formed between the plurality of electrodes to be inserted through the through hole, and the insulation sheet is formed so that a length in a thickness direction of the substrate is larger than a length of a tip end portion of the protrusion protruding from the through hole.

A semiconductor module includes a semiconductor element, a case configured to house the semiconductor element, and a plurality of control terminal units. Each of the control terminal units includes at least one control terminal electrically connected to the semiconductor element, and a guide block constituted of a separate component from the case fixed integrally to the at least one control terminal. The at least one control terminal each includes a terminal pin part protruding from an outer wall surface of the case. Each of the guide blocks includes a guide pin part protruding from the outer wall surface of the case in a direction the same as the direction in which the terminal pin part protrudes. The guide blocks of the control terminal units are constituted of separate components.