A semiconductor structure with dual side seal rings is provided. A semiconductor structure according to the present disclosure include a substrate including a device region and a ring region surrounding the device region, a frontside interconnect structure disposed over the substrate and including a frontside interconnect region and a frontside seal ring region, and a backside interconnect structure disposed below the substrate and including a backside interconnect region and a backside seal ring region. The frontside interconnect region is disposed over the device region and the backside interconnect region is disposed below the device region. The frontside seal ring region is disposed over the ring region and the backside seal ring region is disposed below the ring region.

A semiconductor structure with dual side seal rings is provided. A semiconductor structure according to the present disclosure include a substrate including a device region and a ring region surrounding the device region, a frontside interconnect structure disposed over the substrate and including a frontside interconnect region and a frontside seal ring region, and a backside interconnect structure disposed below the substrate and including a backside interconnect region and a backside seal ring region. The frontside interconnect region is disposed over the device region and the backside interconnect region is disposed below the device region. The frontside seal ring region is disposed over the ring region and the backside seal ring region is disposed below the ring region.

Provided are a package structure and a method of forming the same. The package structure includes a package substrate, a first die, and a stiffener ring. The first die is disposed on the package substrate and has a first sidewall and a second sidewall opposite to each other. The stiffener ring is disposed on the package substrate to surround the first die. The stiffener ring has an inner sidewall facing the first die, and the inner sidewall at least has a slant sidewall facing the first sidewall of the first die.

Provided are a package structure and a method of forming the same. The package structure includes a package substrate, a first die, and a stiffener ring. The first die is disposed on the package substrate and has a first sidewall and a second sidewall opposite to each other. The stiffener ring is disposed on the package substrate to surround the first die. The stiffener ring has an inner sidewall facing the first die, and the inner sidewall at least has a slant sidewall facing the first sidewall of the first die.

A package structure and method for forming the same are provided. The package structure includes a first die formed over a substrate, and a first package layer surrounding the first die. The package structure includes a lid structure formed over the first die and package layer and a first thermal interface material (TIM) formed between the first die and the lid structure. The first thermal interface material includes liquid metal. The package structure includes a second TIM formed between the first package layer and the lid structure, and a top surface of the second TIM is higher than a top surface of the first TIM.

A wafer-level cavity package with backside termination is disclosed. In one aspect, a package includes an air cavity that is adjacent to a substrate. Input/output (I/O) vias extend from the circuits in the air cavity through the substrate for connection to external pads for the package. A cap covers the air cavity and does not include metal conductors therethrough. By routing the vias through the substrate instead of the cap, numerous advantages are realized, including better thermal pathing, improved structural integrity of the cap, reductions in die and module stress, tighter frequency variation, enhanced yield, and options for shrinking overall package geometry.

A semiconductor device includes a first substrate, an electronic component, and a lid. The first substrate includes a first substrate top side, a first substrate bottom side opposite to the first substrate top side, a first substrate lateral side interposed between the first substrate top side and the first substrate bottom side, and a connector structure. The electronic component is coupled to the first substrate top side and coupled to the connector structure. The lid includes a wall part including a ring part coupled to the first substrate top side, a first part of an overhang part coupled to the first substrate lateral side, and a second part of the overhang part extending from the first part of the overhang part away from the first substrate lateral side.

A semiconductor device includes a first substrate, an electronic component, and a lid. The first substrate includes a first substrate top side, a first substrate bottom side opposite to the first substrate top side, a first substrate lateral side interposed between the first substrate top side and the first substrate bottom side, and a connector structure. The electronic component is coupled to the first substrate top side and coupled to the connector structure. The lid includes a wall part including a ring part coupled to the first substrate top side, a first part of an overhang part coupled to the first substrate lateral side, and a second part of the overhang part extending from the first part of the overhang part away from the first substrate lateral side.

A semiconductor package includes a flip chip die communicatively coupled to a substrate. A lid is also coupled to the substrate and covers the flip chip die. A non-curing thermal conductive liquid coolant fills a volume defined by the lid and is used to dissipate heat that is generated by the flip chip die. The non-curing thermal conductive liquid coolant may include nanometer-sized particles that enhance the heat dissipation properties of the non-curing thermal conductive liquid coolant. The semiconductor package also may include a micro-rotator that causes the non-curing thermal conductive liquid coolant to circulate within the volume when a temperature of the flip chip die exceeds a temperature threshold.

A semiconductor package includes a flip chip die communicatively coupled to a substrate. A lid is also coupled to the substrate and covers the flip chip die. A non-curing thermal conductive liquid coolant fills a volume defined by the lid and is used to dissipate heat that is generated by the flip chip die. The non-curing thermal conductive liquid coolant may include nanometer-sized particles that enhance the heat dissipation properties of the non-curing thermal conductive liquid coolant. The semiconductor package also may include a micro-rotator that causes the non-curing thermal conductive liquid coolant to circulate within the volume when a temperature of the flip chip die exceeds a temperature threshold.