A device comprises a non-insulator structure, a dielectric layer, a metal via, a metal line, and a dielectric structure. The dielectric layer is over the non-insulator structure. The metal via is in a lower portion of the dielectric layer. The metal line is in an upper portion of the dielectric layer. The dielectric structure is embedded in a recessed region in the lower portion of the dielectric layer. The dielectric structure has a tapered top portion interfacing the metal via.

A device comprises a non-insulator structure, a dielectric layer, a metal via, a metal line, and a dielectric structure. The dielectric layer is over the non-insulator structure. The metal via is in a lower portion of the dielectric layer. The metal line is in an upper portion of the dielectric layer. The dielectric structure is embedded in a recessed region in the lower portion of the dielectric layer. The dielectric structure has a tapered top portion interfacing the metal via.

Disclosed is a bonded structure including an element with a bonding surface, the bonding surface having a dielectric region and a first semiconductor region laterally spaced from the dielectric region. The bonded structure further includes a first die directly bonded to the dielectric region of the element without an intervening adhesive. The bonded structure further includes a second die having a second bonding surface having a second semiconductor region, the second semiconductor region being bonded to the first semiconductor region of the element without an intervening adhesive and without an intervening deposited dielectric material.

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes levels of dielectric materials interleaved with levels of conductive materials, the levels of conductive materials including a first conductive level and a second conductive level; a memory cell string including a pillar extending in a direction from the first conductive level to the second conductive level, the second conductive level including a side wall; a conductive contact extending in the direction from the first conductive level to the second conductive level and contacting the second conductive level; a first dielectric material between the first conductive level and the conductive contact, the first dielectric material having a first dielectric constant; and a second dielectric material between the first dielectric material and the conductive contact, the second dielectric material having a second dielectric constant, wherein the second dielectric constant is greater than the first dielectric constant.

Provided is a three-dimensional integrated circuit. The three-dimensional integrated circuit includes: a first die having a first surface and a second surface opposite each other; and a second die vertically stacked on the first surface of the first die. The first die includes: a functional block arranged on the first surface of the first die; and a plurality of conductive terminals arranged on the functional block and electrically connecting the first die to the second die. The plurality of conductive terminals include a plurality of edge conductive terminals arranged on an edge region of the functional block, and the plurality of edge conductive terminals are each spaced apart from a boundary of the functional block by a first distance that is greater than or equal to a minimum distance between the plurality of conductive terminals.

Integrated circuitry comprises a stack comprising vertically-alternating insulative tiers and conductive tiers that extend from an array region into a stair-step region. The stair-step region comprises a flight of stairs that comprise treads that individually comprise a target conductive tier. A conductive via extends from directly above, through, and to directly below one of the individual treads to a bottom of the stack. It comprises conductor material that is directly electrically coupled to conductive material that is in the target conductive tier of the one individual tread. The conductive material that is in the target conductive tier of the one individual tread extends upwardly and downwardly from the target conductive tier of the one individual tread and is aside and directly against sidewalls of the conductor material of the conductive via directly above and directly below the target conductive tier of the one individual tread. Other embodiments, including method, are disclosed.

Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a first metal feature in a dielectric layer and a capping layer over the first metal feature, selectively depositing a blocking layer over the capping layer, depositing an etch stop layer (ESL) over the workpiece, removing the blocking layer, and depositing a second metal feature over the workpiece such that the first metal feature is electrically coupled to the second metal feature. The blocking layer prevents the ESL from being deposited over the capping layer.

An electronic device (e.g., semiconductor packages, semiconductor devices, semiconductor dice, semiconductor components, etc.) includes metallization or conductive layers that are stacked on non-conductive layers to define electrical pathways through the electronic devices, as well as methods of manufacturing the same. The metallization structures are at least directed to formation of uniform conductive or metal vias of the metallization structure, and to reduce resistance to improve transportation of an electrical signal through the one or more embodiments of the metallization structures of the present disclosure. For example, the metallization structures may include one or more metallization or conductive layers and one or more non-conductive layers that are stacked on one another to provide electrical pathways with reduced resistance to improve electrical performance of the metallization structures.

The present disclosure provides a semiconductor package structure and a fabrication method thereof. The semiconductor package structure includes: a plurality of first semiconductor chips arranged as being stacked along a first direction, wherein the first semiconductor chip includes at least one conductive structure; the conductive structure includes a first connection structure and a second connection structure both extending along the first direction, and an interconnection structure located between the first connection structure and the second connection structure in the first direction; and the interconnection structure is connected with both the first connection structure and the second connection structure; and a first hybrid bonding layer located between two adjacent ones of the first semiconductor chips in the first direction, wherein the first hybrid bonding layer includes at least one first bonding structure coupled with the conductive structures in the two adjacent ones of the first semiconductor chips.

In an integrated circuit device, a first first-type transistor and a first second-type transistor are stacked with each other at the front side of a substrate, and a second first-type transistor and a second second-type transistor are also stacked with each other at the front side of the substrate. The integrated circuit device also includes a front-side inductor having one or more conductors in a front-side upper metal layer at the front side of the substrate, and a back-side inductor having one or more conductors in a back-side lower metal layer at a back side of the substrate. The front-side inductor and the back-side inductor are conductively connected in series and forms a combined inductor. The front-side inductor, the first first-type transistor, and the first second-type transistor form a stack directly above the back-side inductor.