The present invention provides a package including a first pad, a die and at least one package ESD component is disclosed. The first pad is configured to receive a signal from a device external to the package. The die comprises a second pad and an internal circuit, wherein the internal circuit is configured to receive the signal from the first pad via the second pad. The at least one ESD component is positioned outside the die.

A package structure including a semiconductor die, a redistribution layer structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution layer structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution layer structure includes a backside dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the backside dielectric layer and the inter-dielectric layers. The electronic device is disposed over the backside dielectric layer and electrically connected to an outermost redistribution conductive layer among the redistribution conductive layers, wherein the outermost redistribution conductive layer is embedded in the backside dielectric layer, and the backside dielectric layer comprises a ring-shaped recess covered by the outermost redistribution conductive layer.

In some embodiments, a semiconductor package includes a package substrate that includes a first surface, a second surface that is opposite to the first surface, first substrate pads disposed on the first surface in a first row, and second substrate pads disposed on the first surface in a second row. The semiconductor package further includes a first semiconductor chip that includes first chip pads, lower bonding wires configured to respectively couple the first chip pads and the first substrate pads, a second semiconductor chip that includes second chip pads, upper bonding wires configured to respectively couple the second chip pads and the second substrate pads, and an encapsulant disposed on the package substrate and covering the first semiconductor chip and the second semiconductor chip. The lower bonding wires are ball-bonded to the first chip pads and stich-bonded to the first substrate pads.

An interconnect for a semiconductor device includes a first bonding pad having a first surface, a second bonding pad having a second surface bonded to the first surface of the first bonding pad, and a first guard dummy adjacent the second bonding pad and having a third surface substantially coplanar with the second surface of the second bonding pad.

A method of manufacturing a semiconductor device packaging panel is provided. The method includes forming a packaging substrate having a plurality of grooves orthogonally arranged and substantially surrounding a plurality of package sites. A plurality of semiconductor die is affixed on a first major side of the packaging substrate. Each semiconductor die of the plurality of semiconductor die is affixed at a unique package site of the plurality of package sites. An encapsulant encapsulates the first major side of the packaging substrate such that each semiconductor die of the plurality of semiconductor die is encapsulated by the encapsulant. A singulation cut is formed along each groove of the plurality of grooves of the packaging substrate to form individual semiconductor device units.

A semiconductor device has a first substrate. A first semiconductor die and second semiconductor die are disposed over the substrate. An interconnect bridge is disposed over the first semiconductor die and second semiconductor die. The interconnect bridge has a second substrate. A conductive trace is formed over the second substrate. The conductive trace is electrically coupled from the first semiconductor die to the second semiconductor die. An IPD is also formed over the second substrate. The IPD is electrically coupled between the first semiconductor die and second semiconductor die. An encapsulant is deposited over the first substrate, first semiconductor die, second semiconductor die, and interconnect bridge.

An electrical power module includes a base plate, including an electrically isolating substrate and a first metallic layer formed on a first side of the electrically isolating substrate. The electrical power module also includes electrical connection pillars extending from the first metallic layer. The electrical power module further includes at least one encapsulant retention feature extending from the first metallic layer and including at least one surface that is angled or parallel relative to the first side of the electrically isolating substrate and faces the first side of the electrically isolating substrate. The electrical power module additionally includes at least one electrical component electrically coupled with the metallic layer of the base plate. The electrical power module further includes an encapsulant encapsulating the at least one electrical component, the metallic layer, and the at least one encapsulant retention feature and partially encapsulating the electrical connection pillars.

A method of making an electronics package for an electrical power module includes positioning a base plate into an electrolyte solution such that a first metallic layer of the base plate directly contacts the electrolyte solution. The method also includes positioning a deposition anode array into the electrolyte solution such that a gap is established between the first metallic layer and the deposition anode array. The method further includes connecting the first metallic layer to a power source and connecting the deposition anode array to the power source. The method also includes transmitting electrical energy from the power source through the deposition anode array, through the electrolyte solution, and to the first metallic layer, such that material is deposited onto the first metallic layer and forms an electrical connection pillar, an electrical-component retention feature, and an encapsulant retention feature of the electronics package.

The present disclosure as an embodiment provides a semiconductor package including a first redistribution structure; conductive bumps arranged on a lower surface of the first redistribution structure; a semiconductor chip arranged on an upper surface of the first redistribution structure; an encapsulant that encapsulates at least a portion of the semiconductor chip; a second redistribution structure disposed on the encapsulant and including an insulating layer and a first wiring layer including a first conductive pattern exposed to a side surface of the insulating layer; and a conductive post that penetrates the encapsulant to electrically connect the first redistribution structure and the second redistribution structure.

A semiconductor package includes: a first redistribution structure; a first chip disposed on the first redistribution structure; a molding member at least partially surrounding the first chip and disposed on the first redistribution structure; a plurality of conductive pillars penetrating the molding member in a vertical direction; a support structure disposed between adjacent conductive pillars of the plurality of conductive pillars and disposed on the first redistribution structure; a second redistribution structure disposed on the molding member, the plurality of conductive pillars, and the support structure; a second chip disposed on the second redistribution structure and overlapping the plurality of conductive pillars; and a heat dissipation chip overlapping the first chip in the vertical direction.