A method of manufacturing a semiconductor device includes: adhering together a heat generating body and a heat dissipating body via a thermally conductive sheet by applying a pressure on the heat generating body and the heat dissipating body in a thickness direction of the thermally conductive sheet with the thermally conductive sheet disposed therebetween, the thermally conductive sheet having a compression modulus of 1.40 MPa or less under a compressive stress of 0.10 MPa at 150 C., and a tack strength of 5.0 N.Math.mm or more at 25 C.

A semiconductor package includes: a first redistribution layer including a first wiring; a first semiconductor chip disposed on the first redistribution layer; a post disposed on the first redistribution layer, and electrically connected to the first wiring; a second redistribution layer disposed on the post and including a second wiring and a base metallic layer, wherein the second wiring is electrically connected to the post, and the base metallic layer is disposed on the first semiconductor chip; a marking metallic layer disposed on an upper surface of the base metallic layer; and a heat transfer part disposed on an upper surface of the marking metallic layer and including a thermal interface material (TIM), wherein the marking metallic layer includes a recess that is formed from the upper surface of the marking metallic layer toward the base metallic layer, and the heat transfer part fills the recess.

A semiconductor package includes a substrate, a package structure, and a lid structure. The package structure is bonded over the substrate. The lid structure is bonded over the substrate and thermally coupled to the package structure, wherein the lid structure includes a fluid chamber and a plurality of spring members disposed in the fluid chamber, wherein each of the plurality of spring members is connected between an upper plate and a lower plate of the fluid chamber.

The present disclosure provides a semiconductor package. The semiconductor package includes a substrate, a die, a thermally conductive material, a plurality of bonding wires, a molding compound, and a heat-dissipating frame. The substrate has opposing top and bottom surfaces. The thermally conductive material is disposed between the die and the substrate to bond the die to the top surface of the substrate. One end of each of the bonding wires is connected to the die and the other end of each of the bonding wires is connected to the top surface of the substrate. The molding compound is formed on the top surface of the substrate to cover the die and the bonding wires. The heat-dissipating frame is disposed on the top surface of the substrate to enclose the molding compound. The present disclosure further provides a method of manufacturing the above semiconductor package.

A semiconductor device includes a leadframe, a first semiconductor chip arranged above a mounting surface of the leadframe, and a heatsink arranged above a top surface of the first semiconductor chip facing away from the mounting surface of the leadframe. At least one first lead of the leadframe extends towards a bottom surface of the heatsink facing the mounting surface of the leadframe. The at least one first lead is mechanically coupled to the bottom surface of the heatsink.

A method includes providing an interposer structure including conductive paths, forming micro bumps over the interposer structure and connected to the conductive paths, bonding a first die and a second die onto the micro bumps, forming a molding compound over and around the first die and the second die, performing a planarization process to expose a top surface of the second die, forming a trench in the molding compound to expose a top surface of the first die, forming a thermal interface material (TIM) layer in the trench and over the top surface of the second die, bonding the interposer structure to a substrate, and attaching a heat sink onto the TIM layer. The first die has a first height and the second die has a second height greater than the first height.

A thermal interface film is used between a semiconductor die and a heat sink. The thermal interface film includes at least two layers, a first layer with vertically oriented graphite and a second layer with horizontally oriented graphite. The thermal interface film directs heat away from the semiconductor die both upwards and outwards, spreading the heat over a larger surface area more quickly.

A semiconductor package includes; a package substrate, an interposer disposed on the package substrate, semiconductor chips mounted on the interposer, a molding member on the interposer and surrounding the semiconductor chips, a first sealing member on the molding member, and a heat dissipation member on the package substrate and covering the interposer, the semiconductor chips, and the first sealing member, wherein the heat dissipation member includes a lower structure contacting an upper surface of the package substrate, and an upper structure on the lower structure, extending over the first sealing member, and including a microchannel and a micropillar on the microchannel.

A method for mounting a fin system in a power module includes: sintering a fin system to a first base substrate, the fin system comprising a plurality of fins attached to and extending away from a base plate; sintering a first power switch component to the first base substrate; sintering a second power switch component to a second base substrate; and soldering a heat dissipation element to the second base substrate.

The present invention relates to a fluid-permeable cooler (100) for cooling a power module (208) that comprises a power substrate. The fluid-permeable cooler (101) comprises a first metal part (101), a second metal part (102) and a cooling structure (1). The first metal part (101) and the second metal part (102) are interconnected by means of a soldering process and define a cooling channel (111) which is permeable by a fluid and in which the cooling structure (1) is located.

The first metal part (101) comprises a receiving region (109) to which the power module (208) can be attached. The first metal part (101) is made from a metal material which has an expansion coefficient that is greater than the expansion coefficient of the power substrate (208). The invention also relates to a power electronics assembly (1000) having a cooler (100) of this kind and a power module (200).