A structure is manufactured by forming a mask that has an opening pattern on a fine recessed and projected structure of a substrate having the fine recessed and projected structure with an average period of 1 m or less on a surface thereof, etching the surface of the substrate from a side of the mask to form a recessed portion which has an opening greater than the average period of the fine recessed and projected structure according to the opening pattern of the mask, the recessed portion having a depth equal to or greater than double a difference in height between recesses and projections of the fine recessed and projected structure, and then removing the mask.

A method for forming a semiconductor structure includes following operations. First fins are formed in a first region of a substrate, and second fins are formed in a second region of the substrate. Widths of the first fins are greater than widths of the second fins. An isolation structure is formed over the substrate. A first ion implantation is performed on the first fins. A portion of the isolation structure is removed to expose a portion of each first fin and a portion of each second fin. The widths of the first fins are equal to or less than the widths of the second fins after the removing of the portion of the isolation structure. A 3D capacitor is formed in the first region, and a FinFET device is formed in the second region. The 3D capacitor includes the first fins, and the FinFET device includes the second fins.

The disclosure relates to systems and methods for forming etch masks using direct atomic layer processing. Specifically, the disclosure relates to methods of forming etch masks having fine features at the substrate level, using microreactor direct atomic layer processing (DALP).

An etching method includes forming a recess overlapping an opening of a mask by etching a silicon layer, forming a protective layer on at least a side wall of the recess, and etching a bottom of the recess, in which the forming of the protective layer includes forming a precursor layer on at least the side wall of the recess, and modifying the precursor layer into the protective layer, the etching of the bottom of the recess includes supplying a pulse of source radio frequency power from a radio frequency power supply, and supplying a pulse of bias power to a support configured to support the substrate from a bias power supply, and a period during which the forming of the precursor layer is performed does not overlap a period during which the modifying of the precursor layer is performed.

A method of manufacturing the same is provided. The method includes providing a substrate. The method also includes forming a target layer over the substrate. The method further includes forming a patterned mask structure over the target layer. In addition, the method includes forming an etching stop layer over the patterned mask structure. The method also includes forming an underlayer over the etching stop layer; and performing an etching process to pattern the target layer.

A substrate, a first layer disposed on the substrate, and a second layer disposed on the first layer are provided. An opening is etched through the second layer to the first layer. A first portion of the first layer is etched through the opening using a first etchant, to expose a surface of the substrate through the opening. A feature is deposited on the surface of the substrate through the opening. A second portion of the first layer is etched using a gaseous etchant, to release the substrate from the second layer.

A method of fabricating semiconductor fins, including, patterning a film stack to produce one or more sacrificial mandrels having sidewalls, exposing the sidewall on one side of the one or more sacrificial mandrels to an ion beam to make the exposed sidewall more susceptible to oxidation, oxidizing the opposite sidewalls of the one or more sacrificial mandrels to form a plurality of oxide pillars, removing the one or more sacrificial mandrels, forming spacers on opposite sides of each of the plurality of oxide pillars to produce a spacer pattern, removing the plurality of oxide pillars, and transferring the spacer pattern to the substrate to produce a plurality of fins.

Provided is a composition for forming an organic film which has both embedding and planarization properties, and a method for forming an organic film and a patterning process using the composition. A composition for forming an organic film, containing: (A) an aromatic ring-containing resin; (B) a polymer containing a repeating unit containing a -diketone structure represented by the following formula (1):

##STR00001## wherein L.sub.1 is a saturated or unsaturated linear or branched divalent hydrocarbon group having 2 to 20 carbon atoms, R.sub.A and R.sub.B each are a hydrogen atom, a substituted or unsubstituted linear alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted branched or cyclic alkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aliphatic unsaturated hydrocarbon group having 2 to 20 carbon atoms and containing one or more double or triple bonds, a substituted or unsubstituted heteroalkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a thiol group, a hydroxy group, an amino group, a carboxy group, or a halogen group; and (C) a solvent.

A method for manufacturing a semiconductor substrate, includes: applying an underlayer film-forming composition directly or indirectly to a substrate to form an underlayer film; applying a composition for forming a metal-containing resist film to the underlayer film to form a metal-containing resist film; exposing the metal-containing resist film to extreme ultraviolet rays; and developing the exposed metal-containing resist film. The underlayer film-forming composition includes: a compound including at least one structural unit selected from the group consisting of a structural unit (-1) represented by formula (1-1) and a structural unit (-2) represented by formula (1-2). X is a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms substituted with at least one halogen atom. Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom.

##STR00001##

A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. An oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. Spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.