A package structure includes a die, an encapsulant laterally encapsulating the die, a warpage control material disposed over the die, and a protection material disposed over the encapsulant and around the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

A method of manufacturing a package structure at least includes the following steps. An encapsulant laterally is formed to encapsulate the die and the plurality of through vias. A plurality of first connectors are formed to electrically connect to first surfaces of the plurality of through vias. A warpage control material is formed over the die, wherein the warpage control material is disposed to cover an entire surface of the die. A protection material is formed over the encapsulant and around the plurality of first connectors and the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Embodiments include packages and methods for forming packages which include interposers having a substrate made of a dielectric material. The interposers may also include a redistribution structure over the substrate which includes metallization patterns which are stitched together in a patterning process which includes multiple lateral overlapping patterning exposures.

An electronic device and associated methods are disclosed. In one example, the electronic device includes a photonic integrated circuit and an in situ formed waveguide. In selected examples, the electronic device includes a photonic integrated circuit coupled to an electronic integrated circuit, in a glass layer, where a waveguide is formed in the glass layer.

A power electronics module, having a DBC PCB having power semiconductors arranged thereon, and a multilayered leadframe including at least two separate subframes. No power or control routing takes place on the PCB. A region of the load source subregion is arranged between the PCB and the gate source and kelvin source subregion and is in electrical contact with the power semiconductors, and an adjoining region is located outside the PCB. A region of the drain source subregion is in electrical contact with a drain terminal on the PCB, and an adjoining region is located outside the PCB. The gate source subregion and the kelvin source subregion have a region above the load source subregion at which said subregions are in electrical contact with the power semiconductors and have an adjoining region outside the PCB which is opposite the drain source subregion and has pins bent above the PCB.

A package structure including a semiconductor die, a redistribution layer, a plurality of antenna patterns, a die attach film, and an insulating encapsulant is provided. The semiconductor die have an active surface and a backside surface opposite to the active surface. The redistribution layer is located on the active surface of the semiconductor die and electrically connected to the semiconductor die. The antenna patterns are located over the backside surface of the semiconductor die. The die attach film is located in between the semiconductor die and the antenna patterns, wherein the die attach film includes a plurality of fillers, and an average height of the die attach film is substantially equal to an average diameter of the plurality of fillers. The insulating encapsulant is located in between the redistribution layer and the antenna patterns, wherein the insulating encapsulant encapsulates the semiconductor die and the die attach film.

A packaging structure and a formation method thereof are provided. The packaging structure includes a carrier board, and a plurality of semiconductor chips adhered to the carrier board. Each semiconductor chip has a functional surface and a non-functional surface opposite to the functional surface, and a plurality of pads are formed on the functional surface of a semiconductor chip of the plurality of chips. A metal bump is formed on a surface of a pad of the plurality of pads, and a first encapsulation layer is formed on the functional surface. The packaging structure also includes a second encapsulation layer formed over the carrier board.

A memory module, includes a module substrate and at least one semiconductor package on the module substrate that includes a package substrate having a lower surface and an upper surface. First and second groups of lower pads are on the lower surface, and upper pads are on the upper surface and are electrically connected to the lower pads of the first group. A chip structure is on the upper surface of the package substrate and is electrically connected to the upper pads. First connection bumps connect the lower pads of the first group to the module substrate, and second connection bumps connect the lower pads of the second group to the module substrate. The first connection bumps have a first maximum width at a first distance from the package substrate, and the second connection bumps have a second maximum width at a second, shorter distance from the package substrate.

A semiconductor structure includes a core layer; a passive component disposed within the core layer; and a first redistribution layer disposed over the core layer, wherein the first redistribution layer includes a first interconnect, a second interconnect, and a third interconnect disposed between and electrically isolated from the first interconnect and the second interconnect. The third interconnect is electrically connected to the passive component, and at least one of the first interconnect and the second interconnect is electrically isolated from the passive component. A method of manufacturing the semiconductor structure includes providing a first bias between the first interconnect and the second interconnect, providing a second bias to the passive component through the third interconnect, wherein the first bias is greater than the second bias.

A semiconductor device includes a substrate, a conductive part formed on a front surface of the substrate, a semiconductor chip disposed on the front surface of the substrate, a control unit that controls the semiconductor chip, a sealing resin that covers the semiconductor chip, the control unit and the conductive part, and a first lead bonded to the conductive part and partially exposed from the sealing resin. The conductive part includes a first pad and a second pad disposed apart from each other. The first lead is bonded to the first pad and the second pad.