Various examples relate to a diamond-based film for a die stack, to a method for forming a diamond-based film for a die stack, and to a die stack comprising at least one diamond-based film. The diamond-based film comprises a plurality of laser-induced graphitic structures configured to provide electrical connectivity between a first semiconductor die and a second semiconductor die arranged adjacent to the diamond-based film in the die stack.

A copper-diamond composite (30) according to the present invention includes a plurality of diamond particles (20) that are dispersed in a metal matrix (10) containing copper, in which when a particle size distribution of the diamond particles (20) is measured using an image particle size distribution analyzer, a number average of a sphericity distribution of the diamond particles (20) is 0.90 or more.

A semiconductor structure with a silicon through via (TSV) includes a semiconductor substrate. A TSV penetrates the semiconductor substrate. The TSV includes a metal layer, a barrier layer and an isolation layer. An end of the metal layer protrudes from a back side of the semiconductor substrate. A recess is disposed at one side of the end of the metal layer. A composite structure fills the recess. The composite structure includes a thermal conductive layer and a first dielectric layer. The thermal conductive layer contacts the sidewall of the end of the metal layer and contacts the barrier layer, the isolation layer and the semiconductor substrate. A first dielectric layer is disposed on the thermal conductive layer. A top surface of the first dielectric layer is aligned with the end of the metal layer. The thermal conductive layer includes aluminum nitride, aluminum oxide or diamond.