A voltage control system is disclosed and includes: an edge ring configured to be disposed on a substrate support and surround an outer periphery of a substrate; a tunable edge sheath (TES) ring; a generator; and a controller. The TES ring includes: a TES power electrode capacitively coupled to the edge ring and configured to receive a first radio frequency (RF) voltage signal; and a TES probe electrically coupled to the edge ring and configured to detect a second RF voltage signal at the edge ring. The controller is configured to, based on the second RF voltage signal, control the generator to adjust the first RF voltage signal.

There is provided a technique that includes: etching a film by performing a cycle a predetermined number of times, wherein the cycle includes: (a) supplying a modifying gas to the film; (b) supplying an inert gas to the film; and (c) supplying an etching gas to the film, wherein an execution period of (a) and an execution period of (b) are at least partially overlapped with each other in the cycle.

An etching technique removes a film by supplying a first gas containing a first halogen element and a second gas containing a second halogen element. In embodiments, the first gas includes a Group 13 halide and the second gas includes a chlorine-containing compound with a Group 16 element. The gases are introduced with different start times, optionally with a period of simultaneous supply, so the first gas weakens bonds in a nitride or oxide and the second gas accelerates removal. The method suits cleaning deposits from internal surfaces of a process vessel and etching films on a substrate. After etching, a cyclic purge removes residual species. A pre-coating step may form a nitride film to suppress diffusion of elements and stabilize initial film growth.

A substrate processing apparatus, a substrate processing method, and a method of fabricating a semiconductor device are provided. The substrate processing method includes providing a process gas, generating a preliminary etchant, which includes a first etchant and a second etchant, from the process gas through plasma ignition, generating a process etchant by controlling a composition ratio of the preliminary etchant, and performing a selective etching of the substrate with the process etchant.

The present disclosure relates to a method and apparatus for controlling a plasma sheath near a substrate edge. Changing the voltage/current distribution across the inner electrode and the outer electrode with in the substrate assembly facilitates the spatial distribution of the plasma across the substrate. The method includes providing a first radio frequency power to a central electrode embedded in a substrate support assembly, providing a second radio frequency power to an annular electrode embedded in the substrate support assembly at a location different than the central electrode, wherein the annular electrode circumferentially surrounds the central electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

An apparatus includes a processing chamber, a substrate support in the processing chamber, a plasma source coupled to the processing chamber, and a plurality of heating devices arranged on the processing chamber. Each heating device is configured to emit laser beam on a substrate positioned on the substrate support to heat the substrate.

Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of an article using an atomic layer deposition (ALD) process. The plasma resistant coating has a first layer of amorphous Al.sub.2O.sub.3 on the surface, and a second layer overlaying the first layer, the second layer including a solid solution of Y.sub.2O.sub.3ZrO.sub.2.

A technique includes: (a) forming a second film, whose etching rate is a second etching rate that is equal to or lower than a first etching rate of a first film when a first gas capable of removing at least a portion of the first film is supplied, on the first film; and (b) supplying the first gas to the first film.

A method of manufacturing a semiconductor device includes providing a substrate including a molded structure and a mask layer on the molded structure, loading the substrate into an etching process chamber, performing an etching process on the loaded substrate and forming a plurality of recesses penetrating at least a portion of the molded structure, unloading the substrate from the etching process chamber, and performing a second semiconductor process on the unloaded substrate. The performing the etching process includes supplying an etching process gas including a first process gas and a second process gas including a fluorine-containing gas. In the forming the plurality of recesses, first by-products are formed. Second by-products are formed by a reaction of at least a portion of the first by-products and the second process gas.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a dry etch chamber coupled with the first transfer chamber. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a process chamber coupled with the second transfer chamber.