Provided are nitride atomic layer etch including in situ generating a phosphoric acid on the surface of silicon nitride layer by reacting a phosphorus containing reactant with one or more oxidants. Phosphoric acid selectively etches silicon nitride layer over silicon oxide and/or silicon.

Embodiments of an ion cryo-implantation process utilize a post implantation heating stage to heat the implanted wafer while under the heavy vacuum used during cryo-implantation. The implanted wafer is then transferred to load locks which are held at a lesser vacuum than the heavy vacuum.

There is provided a technique including: at least one pipe heater configured to heat at least one gas pipe configured to supply a gas to a process chamber in which a substrate is processed; at least one temperature detector configured to detect a temperature of the at least one gas pipe; at least one temperature controller configured to be capable of, based on the temperature detected by the at least one temperature detector, outputting a manipulated variable indicating electric power to be supplied to the at least one pipe heater, and controlling the temperature of the at least one gas pipe to approach at least one desired setpoint; and a host controller configured to be capable of controlling start and stop of heating of the at least one gas pipe performed under the control of the at least one temperature controller.

A manufacturing apparatus of a semiconductor device includes: a stage; a bonding head, including a mounting tool, a tool heater, and a lifting and lowering mechanism; and a controller performing bonding processing. The controller performs, in the bonding processing: first processing in which, after a chip is brought into contact with a substrate, as heating of the chip is started, the chip is pressurized against the substrate; distortion elimination processing in which, after the first processing and before melting of a bump, the lifting and lowering mechanism is driven in a lifting direction, thereby eliminating distortion of the bonding head; and second processing in which, after the distortion elimination processing, position control is performed on the lifting and lowering mechanism so as to cancel thermal expansion and contraction of the bonding head, thereby maintaining a gap amount at a specified target value.

Embodiments of the present disclosure herein include an apparatus for processing a substrate. More specifically, embodiments of this disclosure provide a substrate support assembly that includes an electrostatic chuck (ESC) assembly. The ESC assembly comprises a cooling base having a top surface and an outer diameter sidewall, an ESC having a substrate support surface, a bottom surface and an outer diameter sidewall, the bottom surface of the ESC coupled to the top surface of the cooling base by an adhesive layer. The substrate support assembly includes a blocking ring disposed around the outer diameter sidewalls of the cooling base and ESC, the blocking ring shielding an interface between the bottom surface of the ESC and the top surface of the cooling base.

A member for semiconductor manufacturing apparatus includes: a ceramic plate that has an upper surface including a wafer placement surface; a conductive base that is disposed on a lower surface of the ceramic plate; a first hole that extends through the ceramic plate; a second hole that extends through the conductive base; a porous plug that has an upper surface that is exposed from an upper opening of the first hole and a lower surface that is flush with or below an upper surface of the conductive base; an insulating pipe that has an upper surface that is located below the wafer placement surface and a lower surface that is located below the lower surface of the porous plug; and an integrally formed member that is obtained by integrally forming the porous plug and the insulating pipe.

A heat treatment apparatus includes a heating unit, a chamber, an exhaust unit, a partition unit and a switching unit. The heating unit supports and heats a substrate on which a film of a processing liquid is formed. The chamber surrounds the substrate supported by the heating unit. The exhaust unit is configured to discharge a gas from an inner space of the chamber through a discharge opening located near the heating unit. The partition unit is configured to partition the inner space of the chamber into a first space where the substrate on the heating unit is exposed and a second space located above the first space. The switching unit is configured to switch between a first state where the gas is discharged by the exhaust unit through the first space and a second state where the gas is discharged by the exhaust unit through the second space.

An electrostatic chuck includes a ceramic top plate layer made of a beryllium oxide material, a ceramic bottom plate layer made of a beryllium oxide material, a ceramic middle plate layer disposed between the ceramic top plate layer and the ceramic bottom plate layer, an electrode layer disposed between the ceramic top plate layer and the ceramic middle plate layer, and a heater layer disposed between the ceramic middle plate layer and the ceramic bottom plate layer. The electrode layer joins and hermetically seals the ceramic top plate layer to the ceramic middle plate layer, and the heater layer joins and hermetically seals the ceramic middle plate layer to the ceramic bottom plate layer.

A semiconductor device manufacturing method includes: forming an organic film composed of a polymer having a urea bond in a recess by supplying amine and isocyanate to a surface of a substrate having the recess; performing a predetermined process on the substrate on which the organic film is formed in the recess; and removing the organic film in the recess by heating the substrate that has been subjected to the predetermined process to depolymerize the organic film. The amine and the isocyanate have a terminal bifunctional linear chain structure having two functional groups at both ends of a linear chain. At least one of the amine or the isocyanate has side chains connected to the linear chain contained in the linear chain structure.

There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a base, a ceramic member disposed on the base and having a substrate support surface and a ring support surface, one more annular members disposed on the ring support surface to surround a substrate on the substrate support surface, first and second central electrodes inserted into the ceramic member, first to fourth vertical connectors inserted into the ceramic member, first and second annular connectors inserted into the ceramic member, and a central heater electrode inserted into the ceramic member; a DC power source electrically connected to an outer region of the first annular connector through the third vertical connector; and a voltage pulse generator electrically connected to an outer region of the second annular connector through the fourth vertical connector.