According to an aspect of the disclosure, a substrate holder includes a first retaining ring, a second retaining ring, a mounting component configured to detachably mount the first retaining ring on the second retaining ring; and a plurality of pins disposed on an inner circumference of each of the first and second retaining rings. Each of the pins has a curved surface at a distal end of each of the pins.

Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma-assisted processing thereof. In one embodiment, a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate, and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded in the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

A susceptor of an embodiment includes a support base and an annular wafer guide. The support base has a support surface for supporting the wafer. The wafer guide surrounds the periphery of the wafer. When viewed from an axial direction of the center axis, the inner peripheral surface of the wafer guide is provided with an arc portion and a rotation stopper portion. The arc portion extends on a virtual circle centered on the center axis. The rotation stopper portion is located radially inside the virtual circle. The rotation stopper portion has a tip portion and a side portion. The tip portion is located at the radially inner end of the rotation stopper portion. The side portion is located on at least one side of the tip portion in a circumferential direction centered on the center axis. The side portion is connected to the arc portion.

Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include exposing an edge region to treatment gases such as etch gases and/or inhibition gases. Also provided herein are exclusion ring assemblies including multiple rings that may be implemented to provide control of the processing environment at the edge of the wafer.

A wafer centering adjustment method, comprising: before a wafer (4) is etched, a wafer centering system (1) confirms whether the center of the wafer (4) coincides with the center of the first adsorption platform (3), and if not, the wafer centering system (1) corrects the position of the wafer (4). After the etching of the wafer (4) is completed, a wafer edge cleaning effect detection system (2) confirms whether the center of the wafer (4) coincides with the center of the first adsorption platform (3) during the process of etching, and obtains the second offset data. The wafer edge cleaning effect detection system (2) feeds back the second offset data to the wafer centering system (1). Before etching the next wafer, the wafer centering system (1) obtains the first offset data and preforms correction firstly, and then makes a secondary correction to the position of the wafer according to the second offset data obtained after the previous wafer is etched, thereby realizing a closed-loop control of the centering adjustment apparatus. In addition, the degree of coincidence between the center of the wafer and the center of the first adsorption platform is greatly improved by means of the secondary correction, thereby effectively guaranteeing the uniformity of the edge etching width of the wafer.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a treating bath having an accommodation space for accommodating a treating liquid; a support member configured to support at least one substrate in a vertical posture at the accommodation space; and a posture changing robot configured to change a posture of a substrate immersed in the treating liquid from the vertical posture to a horizontal posture, and wherein the posture changing robot comprises: a body configured to hold the substrate thereon; and a liquid supply member configured to supply a wetting liquid to the substrate placed on the body.

A wafer boat system comprises a carrier and a plurality of holder rings configured to support a wafer in the carrier. Each of the holder rings has an annular body and ring projections projecting from said annular body for contact with the wafer. At the ring projections, a local surface area of the annular body is small compared to a circumferential average or median of the local surface area of the annular body, in particular so as to at least partly compensate for a surface area of the respective ring projection, thereby promoting evenness of vapor deposition on wafers supported on the holder rings in the carrier. The reduced local surface area is preferably realized by a relatively large inner radius of the annular body at the ring projection. The carrier may provide a reference structure for automated wafer positioning.

A substrate holding device includes a porous component, a supporting component, a rotation driver, and a holding driver. The porous component includes an adsorbing surface that adsorbs a film of a framed substrate. The supporting component surrounds the porous component and supports a frame of the framed substrate. The rotation driver rotates the supporting component and the porous component in unison. The holding driver includes at least one magnet disposed opposite to the frame with respect to the supporting component and separated from the supporting component, the holding driver compressively holding the frame against the supporting component by a magnetic force of the magnet.

Disclosed are a support unit and a substrate processing apparatus including the same, which prevent a backflow, a wake, or an upward airflow from occurring around a spin chuck. The support unit and the substrate processing apparatus including the same include: a spin chuck; a guide ring provided to surround the spin chuck; a guide ring is installed under the guide ring, and includes cylindrical support with open top and bottom, and a supporting body installed under the guide ring and having a cylindrical shape with open top and bottom portions, in which the supporting body is provided to surround the side of the spin chuck, and a plurality of discharge ports is formed in the supporting body.

A ring assembly for a substrate support is disclosed herein. The ring assembly has a ring shaped body. The ring shaped body has an inner diameter and an outer diameter, a top surface, an inner portion at the inner diameter, and an outer portion at the outer diameter. A carbon based coating is disposed on the top surface of the ring shaped body, wherein the carbon based coating is thicker on the inner portion of the ring shaped body than the outer portion of the ring shaped body.