A semiconductor device includes a first die pad having a main surface, a second die pad having a second main surface, a first switching element connected to the first main surface, a second switching element connected to the second main surface, a first connecting member connecting the first main surface electrode of the first switching element to the second die pad, an encapsulation resin encapsulating the first switching element, the second switching element, the first die pad, the second die pad, and the first connecting member, and leads projecting out of one of the resin side surfaces of the encapsulation resin.

A semiconductor device includes a die carrier, a semiconductor die, a first set of external connectors, and a second set of external connectors. The semiconductor die includes at least a first load electrode and a second load electrode, and is mounted onto the die carrier with the first load electrode being electrically connected to the die carrier. The first set of external connectors is electrically and thermally connected to the die carrier. The second set of external connectors is spaced apart from the die carrier and electrically connected to the second load electrode. An overall wire size of the second set of external connectors is greater than an overall wire size of the first set of external connectors.

A stacked transistor arrangement and process of manufacture thereof are provided. Switched electrodes of first and second transistor chips are accessible on opposite sides of the first and second transistor chips. The first and second transistor chips are stacked one on top of the other. Switched electrodes of adjacent sides of the transistor chips are coupled together by a conductive layer positioned between the first and second transistor chips. Switched electrodes on sides of the first transistor chip and the second transistor chip that are opposite the adjacent sides are coupled to a lead frame by bond wires or solder bumps.

A semiconductor device has a joint part in which a first conducting part and a second conducting part are joined by a joint material. The first conducting part has a high wettability region and a low wettability region in a surface opposite to the second conducting part. The low wettability region is adjacent to the high wettability region to define an outer periphery of the high wettability region and has wettability lower than the high wettability region to the joint material. The high wettability region has an overlap region overlapping a formation region of the joint part in the second conducting part in a planar view, and a non-overlap region connected to the overlap region and not overlapping the formation region of the joint part in the second conducting part. The non-overlap region includes a holding region capable of holding the joint material that is surplus for the joint part.

A semiconductor device has a substrate with a die mounting site and a plurality of leads. A first electrical component is disposed over a first surface of the die mounting site. A second electrical component is disposed over a second surface of the die mounting site opposite the first surface of the die mounting site. A first bond wire is coupled between the first electrical component and a first lead, and a second bond wire is coupled between the second electrical component and a second lead. A first encapsulant is deposited over the first electrical component, and a second encapsulant is deposited over the second electrical component with the leads exposed between the first encapsulant and second encapsulant. The leads are exposed from the first encapsulant and second encapsulant on a side of the semiconductor device.

In one example, an electronic device comprises a substrate comprising a first side and a second side opposite the first side, wherein the substrate comprises a first groove at the second side of the substrate, a first electronic component over the first side of the substrate, and a resin in the first groove. The substrate comprises a floating pad at the first side of the substrate, a second groove at the first side of the substrate, and a third groove at the first side of the substrate, wherein the floating pad is between the second groove and the third groove. Other examples and related methods are also disclosed herein.

A microelectronic device package includes: a package substrate having a first set of leads spaced from a first die pad configured for mounting semiconductor devices, and a second set of leads spaced from a second die pad configured for mounting additional semiconductor devices, the first die pad and the first set of leads spaced from the second die pad and the second set of leads. Semiconductor devices are mounted to the first die pad and second die pad. A ceramic interposer is mounted to the package substrate in thermal contact with at least the first die pad. Mold compound covers the semiconductor devices, a portion of the ceramic interposer, and portions of the first set and the second set of leads.

An electronic device includes a leadframe, where the leadframe includes inner leads, external leads, and die attach portions. The leadframe has channels defined at a junction between the die attach portions and the inner leads, where the channel mitigates crack propagation along a path of the die attach portions. A die assembly is attached to the die attach portions and copper pillars are provided to connect the die assembly to the die attach portions. A mold compound encapsulates the die assembly, the inner leads, the die attach portions, and the copper pillars.

A semiconductor package contains a first semiconductor die, electrically coupled to a plurality of leads around a perimeter of the semiconductor package via a molded interconnect. The molded interconnect comprises a plurality of embedded interconnects in a first mold compound which electrically couple the plurality of bond pads of the first semiconductor die to the plurality of leads of the semiconductor package. The molded interconnect may have a greater cross-sectional area at a given pitch compared to a similar wire bonded semiconductor package and allow advantageous thermal management of the semiconductor package compared to other electrical coupling techniques. The molded interconnect may allow small high-power integrated circuits to be packaged with a package footprint which is smaller than would otherwise be available.

A MEMS pressure sensor packaged with a molding compound. The MEMS pressure sensor features a lead frame, a MEMS semiconductor die, a second semiconductor die, multiple pluralities of bonding wires, and a molding compound. The MEMS semiconductor die has an internal chamber, a sensing component, and apertures. The MEMS semiconductor die and the apertures are exposed to an ambient atmosphere. A method is desired to form a MEMS pressure sensor package that reduces defects caused by mold flashing and die cracking. Fabrication of the MEMS pressure sensor package comprises placing a lead frame on a lead frame tape; placing a MEMS semiconductor die adjacent to the lead frame and on the lead frame tape with the apertures facing the tape and being sealed thereby; attaching a second semiconductor die to the MEMS semiconductor die; attaching pluralities of bonding wires to form electrical connections between the MEMS semiconductor die, the second semiconductor die, and the lead frame; and forming a molding compound.