An electronic package is provided. The electronic package includes an electronic component and a leadframe. The electronic component has a passive surface. The leadframe includes a first patterned part under the electronic component and configured to provide a power to the electronic component by the passive surface.

A semiconductor device includes: a semiconductor element having an element main surface and an element back surface spaced apart from each other in a thickness direction and including a plurality of main surface electrodes arranged on the element main surface; a die pad on which the semiconductor element is mounted; a plurality of leads including at least one first lead and at least one second lead and arranged around the die pad when viewed in the thickness direction; a plurality of connecting members including a first connecting member and a second connecting member and configured to electrically connect the plurality of main surface electrodes and the plurality of leads; and a resin member configured to seal the semiconductor element, a part of the die pad, parts of the plurality of leads, and the plurality of connecting members and having a rectangular shape when viewed in the thickness direction.

A semiconductor package comprises a leadframe with a first lead and a second lead where the first lead has a larger size compared to the second lead. The lead frame further comprises a die attach area on which a die with one or more bond pads of the die is attached and where the first lead and the second lead extend outwardly from the die attach area. The one or more bond pads are associated with the first lead and a plurality of bond wires is arranged between a bond pad and the first lead.

Systems, devices, and methods for high die stack packages with modular structures are provided herein. A die stack package can include a substrate, a proximal unit carried by the substrate, and a distal unit carried by the proximal unit. The proximal unit can include first and second proximal die stacks, a proximal portion of a modular structure, and proximal wire bonds electrically coupling the first and second proximal die stacks to conducting elements of the modular structure. The distal unit can include first and second distal die stacks, a distal portion of the modular structure, and distal wire bonds electrically coupling the first and second distal die stacks to the conducting elements of the modular structure. In some embodiments, the die stack package further includes one or more modular units stacked between the proximal unit and the distal unit.

A semiconductor device includes an insulated circuit board having a lower surface, a heat dissipation base plate having a front surface that includes an arrangement region in which the lower surface of the insulated circuit board is arranged via solder and a solder region in which the solder spreads over the arrangement region, a plating film formed on the front surface of the heat dissipation base plate except for the solder region, and an alloy layer disposed between the solder and the heat dissipation base plate in the arrangement region. The alloy layer contains a solder component that is contained in the solder. In particular, in the semiconductor device, the plating film is formed on an entire surface of the heat dissipation base plate except for an opening region surrounding an outer periphery of the arrangement region where the insulated circuit board is arranged via the solder.

A package for a semiconductor device includes a metal base plate, a wall portion, a first metal film, and a lead portion. The base plate has a first region and a second region surrounding the first region. The wall portion has a first frame body comprising metal and a second frame body comprising resin. The first frame body is provided on the second region. The second frame body is provided on the first frame body. The first metal film is provided on the second frame body. The lead portion is conductively bonded to the first metal film. The first frame body is conductively bonded to the base plate. A thickness of the first frame body in a first direction that is a direction in which the first frame body and the second frame body are arranged is larger than a thickness of the first metal film in the first direction.

A module arrangement for power semiconductor devices, includes two or more heat spreading layers with a first surface and a second surface being arranged opposite to the first surface. At least two or more power semiconductor devices are arranged on the first surface of the heat spreading layer and electrically connected thereto. An electrical isolation stack comprising an electrically insulating layer and electrically conductive layers is arranged in contact with the second surface of each heat spreading layer. The at least two or more power semiconductor devices, the heat spreading layers and a substantial part of each of the electrical isolation stacks are sealed from their surrounding environment by a molded enclosure. Accordingly, similar or better thermal characteristic of the module can be achieved instead of utilizing high cost electrically insulating layers, and double side cooling configurations can be easily implemented, without the use of a thick baseplate.

A semiconductor device includes: a baseplate; an insulating substrate on the baseplate; a semiconductor element on the insulating substrate; a case bonded to the baseplate by an adhesive, the case surrounding a space in which the semiconductor element is positioned; and an encapsulating material filling the space surrounded by the case, in which, the case includes a claw, the claw includes: a protrusion protruding from an inner wall surface of the case; and a hook inclined from the protrusion, a space being sandwiched between the hook and the inner wall surface of the case.

An object is to provide a technique capable of reducing stress in the entire semiconductor device. The semiconductor device includes a plurality of sub-modules including a first sealing member, an insulating substrate provided with a first circuit pattern electrically connected to at least one of the conductive plates of the plurality of sub-modules, connection members electrically connected to at least one of the conductive pieces of the plurality of sub-modules, and a second sealing member having lower hardness than the first sealing member, which seals the plurality of sub-modules, the insulating substrate, and the connection members.

A switching device includes: a switching element; a die pad; a gate terminal; a first power terminal integral with the die pad; and a second power terminal, the gate terminal, the first power terminal, and the second power terminal are located on a side of a first direction of the die pad, the gate terminal, the first power terminal, and the second power terminal are arranged in a second direction orthogonal to the first direction in the following order: the gate terminal, the first power terminal, and the second power terminal or the second power terminal, the first power terminal, and the gate terminal, the switching element includes a first and a second gate pad, the first gate pad is closer to the gate terminal than the second gate pad is, the second gate pad is closer to the second power terminal than the first gate pad is.