A member for semiconductor manufacturing apparatus includes: a ceramic plate that has an upper surface including a wafer placement surface; a conductive base that is disposed on a lower surface of the ceramic plate; a first hole that extends through the ceramic plate; a second hole that extends through the conductive base; a porous plug that has an upper surface that is exposed from an upper opening of the first hole and a lower surface that is flush with or below an upper surface of the conductive base; an insulating pipe that has an upper surface that is located below the wafer placement surface and a lower surface that is located below the lower surface of the porous plug; and an integrally formed member that is obtained by integrally forming the porous plug and the insulating pipe.

A temperature control system of a semiconductor manufacturing device includes first and second heating media storages that respectively store low-temperature heating media and high-temperature heating media, a mixing device including a mixing valve that mixes the low-temperature heating media and the high-temperature heating media at a predetermined mixing ratio, and a control device. The mixing device provides mixed heating media to a load, and distributes recovered heating media recovered from the load to the first and second heating media storages. The control device is configured to, by performing feed-forward control and feedback control over a mixing unit temperature using a relationship model between a reference temperature representing a temperature of heating media passing through the load and the mixing unit temperature which is a temperature of heating media output by the mixing valve, control the mixing ratio such that the reference temperature has a target reference temperature.

A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.

A heat treatment apparatus includes a heating unit, a chamber, an exhaust unit, a partition unit and a switching unit. The heating unit supports and heats a substrate on which a film of a processing liquid is formed. The chamber surrounds the substrate supported by the heating unit. The exhaust unit is configured to discharge a gas from an inner space of the chamber through a discharge opening located near the heating unit. The partition unit is configured to partition the inner space of the chamber into a first space where the substrate on the heating unit is exposed and a second space located above the first space. The switching unit is configured to switch between a first state where the gas is discharged by the exhaust unit through the first space and a second state where the gas is discharged by the exhaust unit through the second space.

A semiconductor device manufacturing method includes: forming an organic film composed of a polymer having a urea bond in a recess by supplying amine and isocyanate to a surface of a substrate having the recess; performing a predetermined process on the substrate on which the organic film is formed in the recess; and removing the organic film in the recess by heating the substrate that has been subjected to the predetermined process to depolymerize the organic film. The amine and the isocyanate have a terminal bifunctional linear chain structure having two functional groups at both ends of a linear chain. At least one of the amine or the isocyanate has side chains connected to the linear chain contained in the linear chain structure.

A film forming method includes: a supply operation of supplying a processing gas into a processing container in which a substrate is accommodated, the processing gas including a silicon-containing gas, a nitrogen-containing gas, and a diluent gas; and a film forming operation of plasmarizing the processing gas by supplying, into the processing container, power obtained by phase-controlling and superimposing first power with a first frequency in a VHF band and second power with a second frequency different from the first frequency in the VHF band, and forming a silicon nitride film on the substrate by the plasmarized processing gas.

There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a base, a ceramic member disposed on the base and having a substrate support surface and a ring support surface, one more annular members disposed on the ring support surface to surround a substrate on the substrate support surface, first and second central electrodes inserted into the ceramic member, first to fourth vertical connectors inserted into the ceramic member, first and second annular connectors inserted into the ceramic member, and a central heater electrode inserted into the ceramic member; a DC power source electrically connected to an outer region of the first annular connector through the third vertical connector; and a voltage pulse generator electrically connected to an outer region of the second annular connector through the fourth vertical connector.

A heat exchange module installed to be in constant communication with a high-pressure vessel forming a heating space (S2) under high-temperature and high-pressure process conditions, comprises: a main body unit (500) forming a heat exchange space (S4) therein; a flow path forming unit (600) provided to form a flow path in which exhaust gas discharged from the high-pressure vessel flows within the heat exchange space (S4); and a heat medium piping unit (700), at least a portion of which is installed within the heat exchange space (S4), with a heat medium flowing therein for direct or indirect heat exchange with the exhaust gas.

A substrate processing apparatus comprises: a heater unit (200) forming a heating space (S2) therein ; a processing vessel (300) including a vessel part (310) in which the heater unit (200) is disposed and having an opening (301) formed on a side thereof, and an opening/closing part provided in the vessel part (310) to open and close the opening (301) and having a door opening (331) formed therethrough ; and a damper unit (500) installed in the processing vessel (300) to cover the door opening (331) and transferring exhaust gas discharged from the heating space (S2) to the outside through the door opening (331).

A substrate processing apparatus comprises: an inner tube (100) forming a processing space (S1) in which a plurality of substrates are stacked and processed in a vertical direction ; a heater unit (200) installed to surround at least a portion of the inner tube (100) to form a heating space (S2) between itself and the inner tube (100), and generating heat by receiving power from outside ; and an outer tube (300) in which the heater unit (200) is disposed to form an internal space (S3) between itself and the heater unit (200), and having at least one openable/closable opening (302) formed on a side thereof to allow external access to the internal space (S3), wherein the heater unit (200) is electrically connected to a power supply unit (700) that transfers power through the outer tube (300) at a position corresponding to the opening (302).