A vapor phase growth apparatus of embodiments includes: a reactor; a holder provided in the reactor to place a substrate thereon; an annular out-heater provided below the holder; an in-heater provided below the out-heater; a disk-shaped upper reflector provided below the in-heater and formed of pyrolytic graphite; and a disk-shaped lower reflector provided below the upper reflector, formed of silicon carbide, and having a thickness smaller than that of the upper reflector.

The disclosure provides a semiconductor substrate heating device, comprising a heating cavity, a main heating part, a compensation control part and at least one temperature compensation unit. The compensation control part and several temperature compensation units are arranged in the heating cavity of the semiconductor substrate heating device, a top surface of the compensation control part and a bottom surface of a heating plate are arranged in a correspondence manner, and the several temperature compensation units arranged between the heating plate and the compensation control part and being in communication connection with the compensation control part are arranged in one-to-one correspondence with several temperature control compensation areas at the bottom surface of the heating plate. Complicated outgoing design is avoided, and temperature compensation adjustment can be performed on the temperature control compensation areas under the control of the compensation control part, thereby effectively controlling the temperature uniformity of the semiconductor substrate with as little manufacturing and maintenance costs as possible.

An apparatus, system and method for providing a stationary chuck for positionally maintaining an associated in-process wafer. The stationary chuck may include a base plate having, on an upper surface thereof, a plurality of machined concentric ridges that form a series of concentric circular zones; a silicon carbide coating on the upper surface of the base plate; and a plurality of silicon carbide inlays capable of being bonded onto the silicon carbide coating in the concentric circular zones.

Provided are nitride atomic layer etch including in situ generating a phosphoric acid on the surface of silicon nitride layer by reacting a phosphorus containing reactant with one or more oxidants. Phosphoric acid selectively etches silicon nitride layer over silicon oxide and/or silicon.

Provided is a substrate processing apparatus including a chamber defining a substrate processing space, a supporting plate inside the chamber and comprising an upper surface configured to seat a substrate, a temperature controlling plate facing at least a portion of the supporting plate, and at least one electrochromic module at the temperature controlling plate, and configured to change light transmittance depending on applied electrical energy.

Provided are an apparatus and method for manufacturing a display apparatus. The apparatus includes a mask frame including an opening area in a central portion of the mask frame, a mask sheet disposed on the mask frame to cover the opening area, a chuck part disposed to face the mask sheet and fix a display substrate, a gripper disposed between the mask sheet and the chuck part to grip the display substrate and to release gripping in case that the chuck part approaches the display substrate and fixes the display substrate, and a deposition source disposed opposite the chuck part with the mask sheet between the deposition source and the chuck part.

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a first plurality of apertures and a second plurality of apertures. The systems may include a plurality of lid stacks equal to a number of the first plurality of apertures. Each lid stack may include a choke plate seated on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture axially aligned with an associated aperture of the first plurality of apertures. The choke plate may define a second aperture axially aligned with an associated aperture of the second plurality of apertures. The choke plate may define protrusions extending from each of a top and bottom surface of the choke plate that are arranged substantially symmetrically about the first aperture.

Embodiments of the present disclosure herein include an apparatus for processing a substrate. More specifically, embodiments of this disclosure provide a substrate support assembly that includes an electrostatic chuck (ESC) assembly. The ESC assembly comprises a cooling base having a top surface and an outer diameter sidewall, an ESC having a substrate support surface, a bottom surface and an outer diameter sidewall, the bottom surface of the ESC coupled to the top surface of the cooling base by an adhesive layer. The substrate support assembly includes a blocking ring disposed around the outer diameter sidewalls of the cooling base and ESC, the blocking ring shielding an interface between the bottom surface of the ESC and the top surface of the cooling base.

An embodiment of an apparatus may include a chuck body, and a surface formed on the chuck body to hold a wafer, where the surface has a non-flat shape. Other embodiments are disclosed and claimed.

A member for semiconductor manufacturing apparatus includes: a ceramic plate that has an upper surface including a wafer placement surface; a conductive base that is disposed on a lower surface of the ceramic plate; a first hole that extends through the ceramic plate; a second hole that extends through the conductive base; a porous plug that has an upper surface that is exposed from an upper opening of the first hole and a lower surface that is flush with or below an upper surface of the conductive base; an insulating pipe that has an upper surface that is located below the wafer placement surface and a lower surface that is located below the lower surface of the porous plug; and an integrally formed member that is obtained by integrally forming the porous plug and the insulating pipe.