H10P72/7624

SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
20260047385 · 2026-02-12 ·

There is provided a substrate processing apparatus comprising: a substrate transfer chamber having a floor provided with a first magnet; a substrate transfer module including a stage on which a substrate is placed, a traveling plate disposed below the stage, and a second magnet having a repulsive force with respect to the first magnet, the substrate transfer module being configured to be movable in the substrate transfer chamber by magnetic levitation using the repulsive force; and a substrate processing chamber disposed on an upper surface side of the substrate transfer chamber to process the substrate, the substrate processing chamber having an opening having a size that allows at least a part of the stage on which the substrate is placed to pass therethrough, the opening being open toward the inside of the substrate transfer chamber. The substrate is processed in a state where the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening by raising the substrate transfer module and the opening is closed by the traveling plate.

Susceptor and manufacturing method therefor

Disclosed are a susceptor for enabling uniform plasma treatment over the entire surface of a wafer, and a manufacturing method therefor. Provided is the susceptor comprising: a dielectric plate having an upper surface on which a wafer is loaded, and a lower surface facing same; and an inner RF electrode and an outer RF electrode that are buried in the dielectric plate, wherein, with respect to the lower surface, the height of a first plane in which the inner RF electrode is buried is less than the height of a second plane in which the outer RF electrode is buried.

Apparatus for treating substrate

Provided is an apparatus for treating a substrate, which includes: a chamber having a treating space; a substrate support unit supporting and rotating a substrate in the treating space; a liquid supply unit supplying a chemical liquid to the substrate supported on the substrate support unit; a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit; and a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate, in which the laser reflection unit includes a reflection member reflecting the laser reflected from the substrate, and a driving member tilting the reflection member at a predetermined tilt angle.

Ceramic substrate, electrostatic chuck, substrate fixing device, and package for semiconductor device
12550673 · 2026-02-10 · ·

A ceramic substrate includes a base body, and an electrical conductor pattern embedded in the base body. The base body is composed of ceramics. The electrical conductor pattern has, as a main component, a solid solution having a body-centered cubic lattice structure in which copper is solid-dissolved in tungsten.

CONTAINER TRANSFER METHOD, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS
20260040877 · 2026-02-05 · ·

It is possible to increase a transfer throughput of the substrate. There is provided a technique that includes: (a) supporting a container capable of accommodating a substrate with a first container support; and (b) controlling a rotating shaft for revolving placement structures arranged in a circumferential direction, an elevating structure for elevating a transfer robot and the transfer robot such that, when transferring a container from the transfer robot to a predetermined placement structure, a second moving speed of the elevating structure at which the transfer robot is elevated is faster than a first moving speed at which the predetermined placement structure is moved to a transfer position where the container is transferable from the transfer robot.

CATHODE ASSEMBLY FOR INTEGRATION OF EMBEDDED ELECTROSTATIC CHUCK (ESC)

Embodiments disclosed herein include an apparatus that includes an electrostatic chuck (ESC). The electrostatic chuck may include a first body that is electrically conductive, and a ceramic insert on the first body with an electrode embedded within the ceramic insert. In an embodiment, the apparatus may further include a facility plate that is coupled to the ESC. The facility plate may include a second body that is electrically conductive with a hole through the second body. In an embodiment, a DC input connector is provided through the hole, and an RF feed line is coupled to the second body. In an embodiment, a pin of the DC input connector is electrically isolated from the RF feed line.

WAFER ALIGNER
20260040879 · 2026-02-05 · ·

Disclosed is a wafer aligner device including a platform, a lifting gripper disposed on the platform to be lifted up or lowered down relative to the platform, a rotating gripper disposed on the platform to be rotated relative to the platform, a rangefinder disposed next to the platform, and a control module. The control module is electrically connected to the lifting gripper, the rotating gripper, and the rangefinder. The control module drives the lifting gripper to be lifted up or lowered down to transfer a wafer between the lifting gripper and the rotating gripper. When the wafer is disposed on the rotating gripper, the control module rotates the rotating gripper relative to the platform and drives the rangefinder to detect a change in a relative distance along an edge of the wafer so as to determine a position of a notch of the wafer.

Wafer placement table, and member for semiconductor manufacturing apparatus, using the same
12543527 · 2026-02-03 · ·

A wafer placement table includes a ceramic base having a wafer placement surface on its top surface and incorporating an electrode, a cooling base provided on a bottom surface side of the ceramic base, and a refrigerant flow channel groove provided in the cooling base so as to open at a bottom surface of the cooling base.

SUBSTRATE SUPPORT APPARATUS
20260068601 · 2026-03-05 ·

Some embodiments of the present disclosure provide a substrate support apparatus including a support member configured to support a substrate on a substrate support surface, wherein the support member has a plurality of injection holes, each having a first end that is positioned on the substrate support surface and configured to inject a cleaning gas, and a plurality of exhaust holes, each having a first end that is positioned on the substrate support surface and configured to enable exhaust.

Electrostatic chuck assembly for high temperature processes
RE050821 · 2026-03-10 · ·

An electrostatic chuck assembly includes a puck and a cooling plate. The puck includes an electrically insulative upper puck plate comprising one or more heating elements and one or more electrodes to electrostatically secure a substrate and further includes a lower puck plate bonded to the upper puck plate by a metal bond, the lower puck plate comprising a plurality of features distributed over a bottom side of the lower puck plate at a plurality of different distances from a center of the lower puck plate, wherein each of the plurality of features accommodates one of a plurality of fasteners. The cooling plate is coupled to the puck by the plurality of fasteners, wherein the plurality of fasteners each apply an approximately equal fastening force to couple the cooling plate to the puck.