A plasma processing apparatus including a metallic base material disposed inside a wafer stage and having a cylindrical shape or a circular plate shape; a dielectric film disposed on an upper surface of the base material; a film-shaped heater disposed inside the dielectric film; a refrigerant flow path disposed in a concentric shape or in a spiral shape about a center of the base material in the base material and allowing a refrigerant to flow therethrough; and at least one arc-shaped space multiply disposed about the center in the base material between the refrigerant flow path and the heater and having an inside reduced to a predetermined degree of vacuum and sealed. A region of a portion of the base material between the disposed arc-shaped spaces is projected and overlapped on a region of an intermediate portion of the base material that partitions two of the adjacent refrigerant flow paths.

A light emitting element transfer system includes: a vacuum chamber for creating a vacuum atmosphere or removing the vacuum atmosphere therein, an alignment portion for aligning a first substrate and a second substrate inside the vacuum chamber, a bonding portion for applying heat and pressure to the aligned first substrate and second substrate and which is disposed adjacent to the alignment portion in a an arrangement direction and inside the vacuum chamber, and a first transfer portion movable in the vacuum chamber the arrangement direction, for transferring the first substrate or the second substrate to the alignment portion, and for transferring the aligned first substrate and second substrate from the alignment portion to the bonding portion.

A substate gripper includes a first plate, a second plate, and a plurality of arms coupled with the first plate and the second plate. Each of the plurality of arms includes at least one flexure member configured to flex responsive to movement of the second plate with respect to the first plate. Flexure of the flexure members of the plurality of arms causes respective ends of the plurality of arms to perform a gripping action to grip a substrate.

Disclosed is a ceramic susceptor. The ceramic susceptor may include: an insulating plate in which one or more electrodes are arranged; a hollow shaft with one end connected to the insulating plate; and one or more electrode rods connected to the electrodes. The hollow shaft may include one or more side wall holes penetrating an interior of a side wall, and the one or more electrode rods may include one or more first electrode rods, each of which is electrically connected to a first electrode among the one or more electrodes. The first electrode rods may extend through the side wall holes, respectively.

The present invention relates to a substrate raising/lowering module, a substrate processing module including the same, and a substrate processing system. A lifting module includes: a substrate support disposed in an interior space and supporting a substrate; and an upward/downward driving unit coupled to the substrate support to drive upward/downward movement of the substrate support, wherein the upward/downward driving unit includes a shaft coupled to the substrate support and extending outwardly through a chamber, and an anti-rotation member coupled to the shaft to prevent circumferential rotation of the shaft about a longitudinal reference axis of the shaft.

Provided is a support unit for supporting a substrate, the support unit including: a heating member configured to transmit thermal energy to a supported substrate; a reflective plate disposed under the heating member and configured to reflect thermal energy generated by the heating member to the substrate; a cooling plate disposed under the reflective plate and formed with a cooling flow path in which a cooling fluid flows; and a gas supply line configured to supply gas to a space between the reflective plate and the cooling plate.

The present disclosure relates to a method of manufacturing a susceptor. The present disclosure may provide a method of manufacturing a susceptor in which a cap-type bushing structure or tube structure is applied to a bonding structure of a base substrate and an insulating plate, so that the bonding structure can withstand or prevent the increase in pressure inside a gas flow path during a curing process, thereby preventing clogging of a gas hole in a high-power susceptor or the like for a high aspect ratio contact (HARC) processes, and minimizing the occurrence of arcing by reducing contamination around the gas hole. In addition, the present disclosure may also provide a susceptor manufactured by the method.

An apparatus for bonding a substrate includes: a bonding chuck including a base having the substrate on one surface; at least one vacuum region, on one surface of the bonding chuck, configured to provide a vacuum pressure for vacuum-absorbing the substrate; a plurality of first sensors on the one surface of the base; and at least one second sensor on an outer region of the base, wherein the plurality of first sensors are configured to measure a first distance from the plurality of first sensors to one surface of the substrate, and wherein the at least one second sensor is configured to measure a second distance from the at least one second sensor to one surface of the substrate.

Provided is an apparatus for manufacturing a display device. The apparatus for manufacturing a display device includes a chamber having an internal space, a pressure control module that controls an internal pressure of the chamber, and a chuck including a base body arranged in the chamber, an adhesive member to which a substrate is adhered, and an intermediate member having porosity and arranged between the base body and the adhesive member.

A substrate processing apparatus is disclosed. The substrate processing apparatus includes a chamber having a processing space in which substrate processing is performed therein, one or more exhaust lines connected to the chamber and configured to discharge a processing fluid from the processing space to an outside of the chamber, a supporting chuck disposed in the processing space, configured to support the substrate from below so that the substrate is disposed on an upper portion of the supporting chuck, and having an inner space configured to accommodate a first processing fluid, and one or more first supply lines configured to receive the first processing fluid from the outside of the chamber and transfer the first processing fluid to the inner space of the supporting chuck. In addition, various embodiments may be possible.