A substrate support apparatus includes a lower support having a plate shape and having a first axis as a central axis extending in a vertical direction, an upper support on the lower support, and a connector connecting the lower support and the upper support, wherein the connector includes a connection pillar extending parallel to the first axis and at least one substrate support connected to the connection pillar and extending from the connection pillar toward the first axis, an upper surface of the at least one substrate support includes a first upper surface connected to the connection pillar and a second upper surface positioned at a vertical level lower than a vertical level of the first upper surface, and a first distance between the first upper surface and the first axis is larger than a second distance between the second upper surface and the first axis.

The present disclosure relates to a multi-axis stage apparatus capable of significantly improving the precision of wafer bonding. The apparatus may include a base portion, a first driving device configured to vertically move at least a portion thereof in a third axis direction by a first distance with respect to the base portion, a second driving device formed on the first driving device and configured to vertically move at least a portion thereof in the third axis direction by a second distance, and an alignment stage connected to the second driving device and configured to align a first wafer chuck holding a first wafer such that the first wafer can be vertically moved in the third axis direction by a distance equal to the sum of the first and second distances.

A load lock device includes a load lock chamber, and a substrate holding structure configured to hold a substrate in the load lock chamber, wherein the substrate holding structure includes a facing surface facing the substrate, and is configured to allow a gas to flow through a space between the substrate and the facing surface, and in a state in which the substrate is held by the substrate holding structure, a distance between the substrate and a portion located inside an outer edge of the facing surface is larger than a distance between the substrate and the outer edge of the facing surface.

A stage includes: a plate-shaped member having a mounting surface on which a substrate is to be placed and a rear surface opposite to the mounting surface, and having a through-hole penetrating the mounting surface and the rear surface, and an embedded member disposed in the through-hole, the embedded member includes a first member having a positive thermal expansion coefficient and a second member having a negative thermal expansion coefficient having an absolute value substantially equal to a thermal expansion coefficient of the first member along an axial direction of the embedded member.

A member for semiconductor manufacturing apparatus includes a ceramic plate in which an electrode is embedded; a power feeder receiving hole extending from a lower surface of the ceramic plate to a position close to the electrode; a power feeder inserted in the power feeder receiving hole; a recess extending from a bottom surface of the power feeder receiving hole to the electrode or an electrode lead-out portion attached to the electrode, the recess having an opening diameter smaller than a diameter of the power feeder receiving hole and greater than or equal to a diameter of the power feeder; a first brazing material layer filling the recess; and a second brazing material layer bonding an entire end surface of the power feeder to the first brazing material layer and not extending to a boundary between the bottom surface and a side surface of the power feeder receiving hole.

Exemplary semiconductor processing chambers may include a chamber body defining a substrate processing region. The chambers may include a substrate support positioned within the substrate processing region. The substrate support may include a ceramic or polymeric insulator plate positioned between a cathode assembly and an electrostatic chuck assembly. The chambers may include an acoustic emission probe in contact with the insulator plate of the substrate support.

Provided is a substrate-holding device capable of improving the in-plane uniformity of a wafer back surface pressure and the flatness of wafer holding, flattening not only a flat wafer but also a warped wafer, and holding a wafer in a back surface non-contact manner, and an optical inspection device including the substrate-holding device. The substrate-holding device includes a wafer chuck 102 (rotary chuck) and a clamp unit 103 that supports an edge of a substrate 101 to be rotated by the wafer chuck 102 (rotary chuck) in a radial direction and a circumferential direction of the substrate 101, in which the wafer chuck 102 is provided with a plurality of static pressure bearing pads that hold the substrate 101 in a back surface non-contact manner, the plurality of static pressure bearing pads including a plurality of gas supply ports 111 that supplies gas to the substrate 101.

A wafer cleaning device includes a rotary table that rotate around a rotation axis, and includes a mounting surface having one or more disposition regions spaced apart from the rotation axis, the mounting surface being disposed downwardly, and a cleaning fluid supply disposed below and opposite to the mounting surface and supplying a cleaning fluid upwardly to the one or more disposition regions.

Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., areas proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.

There is provided a substrate holder including: a ceramic base member, an electrode and a shaft. The ceramic base member is provided with: an annular projected part and a plurality of projected parts. A circular area of which diameter is not less than 0.4 times an inner diameter of the cylindrical part is provided on a center in an upper surface of the ceramic base member. A first envelope surface of projected parts arranged in the circular area is a flat surface, and a second envelope surface of projected parts arranged at outside of the circular area is a curved surface. Alternatively, the first envelope surface is a curved surface having a first curvature and the second envelope surface is a flat surface or a curved surface having a second curvature which is different from the first curvature.