According to an embodiment, an apparatus for a hot plate apparatus is disclosed. The hot plate apparatus includes a housing structure, an alloy, and a heating element. The housing structure includes an outer shell surrounding a cavity. The alloy is disposed of within the cavity. The alloy has a melting temperature range. The heating element is configured to transition the alloy from a solid state to a liquid state at a set temperature between the melting temperature range.

The present disclosure provides a load-bearing device telescopic relative to a reference object, a wafer transfer device, a chamber device which is configured to exchange wafers between different pressure environments, and a wafer processing apparatus, the load-bearing device including a base, a movable platform opposite to the base, an ejector rod which is configured to extend through a bearing secured to the base and is coupled to the movable platform, and a driving member which is fixed relative to the reference object and is configured to push against the ejector rod and in turn to drive the ejector rod to displace relative to the base. The bearing device further includes a corrugated tube assembly, surrounding the ejector rod and includes a first corrugated tube sleeved on the ejector rod, the ejector rod and the first corrugated tube cooperating with each other to define collectively a first space.

A semiconductor wafer manufacturing apparatus includes a reaction chamber, a reactant gas supply pipe and a reactant gas discharge pipe communicated with the reaction chamber, a rotating device having a cylindrical member, a lid member disposed on one end portion of the cylindrical member, a heating device disposed in a hollow chamber that is a space surrounded by the cylindrical member and the lid member, an inert gas supply pipe and an inert gas discharge pipe communicated with the hollow chamber, and a controller. The controller is configured to adjust an amount of an inert gas discharged from the inert has discharge pipe such that a pressure in the hollow chamber is higher than a pressure in the reaction chamber and equal to or lower than a pressure of a minimum closing portion of the lid member.

A susceptor can include a generally circular shape and may include an inner and outer susceptor. The outer susceptor can include a support region having one or more support mechanisms as well as a channel region extending from the region boundary to an outer radial boundary radially inward of an outer edge of the susceptor, the channel region can include a plurality of channels extending radially from the region boundary to the outer radial boundary. The inner susceptor can include a second plurality of channels extending from the inner radial boundary to an edge of the inner susceptor.

A support apparatus is configured to be disposed in a semiconductor container. The support apparatus includes a body and a bearing surface. The bearing surface is located on an upper surface of the body. The bearing surface includes a first inclined surface gradually protruding obliquely from the bearing surface toward an opening of the semiconductor container, and a second inclined surface gradually protruding obliquely toward an inner rear wall of the semiconductor container. The bearing surface is configured to bear a contact surface of a semiconductor substrate. The contact surface makes surface contact along the first inclined surface and along the second inclined surface that are different inclined surfaces. The support apparatus can effectively reduce deformation during support and contamination caused during frictional contact.

An upper radiation thermometer is provided obliquely above a semiconductor wafer to be measured. The upper radiation thermometer includes a photovoltaic detector that produces an electromotive force when receiving light. The photovoltaic detector has both high-speed responsivity and good noise properties in a low-frequency range. The upper radiation thermometer does not require a mechanism for cooling because the photovoltaic detector is capable of obtaining sufficient sensitivity at room temperature without being cooled. There is no need to provide a light chopper and a differentiating circuit in the upper radiation thermometer. This allows the upper radiation thermometer to measure the front surface temperature of the semiconductor wafer with a simple configuration both during preheating by means of halogen lamps and during flash irradiation.