A method of cleaning a process chamber is provided including supplying a plasma from a remote plasma source to an interior volume of a rapid thermal processing chamber during a first time period, the rapid thermal processing chamber including a plurality of lamps configured to heat an interior volume of the rapid thermal processing chamber; and providing heat from the plurality of lamps to heat the interior volume of the rapid thermal processing chamber during the first time period when the plasma from the remote plasma source is provided to the interior volume of the rapid thermal processing chamber.

A processing method of a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part is to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In the forming the modified layers, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer in a direction from an inner side of the first wafer toward an outer side thereof, so that the plurality of ring-shaped modified layers are formed in a form of descending stairs.

A method of manufacturing semiconductor devices, the semiconductor devices manufactured, and apparatuses for forming the semiconductor devices are described in which by-products from etching processes are independently heated separately from a semiconductor wafer. In embodiments a dielectric material is deposited into a trench over a semiconductor substrate and the dielectric material is recessed with an etching process. The etching process includes heating the semiconductor substrate and separately heating a by-product of the etching process.

Provided are nitride atomic layer etch including in situ generating a phosphoric acid on the surface of silicon nitride layer by reacting a phosphorus containing reactant with one or more oxidants. Phosphoric acid selectively etches silicon nitride layer over silicon oxide and/or silicon.

A method including using a plurality of clamp electrodes of a substrate support to electrostatically secure a substrate during a process. The method further includes actively discharging a residual charge from the substrate after completion of the process based on at least one of contacting a backside of the substrate with a conductive lift pin or exposing the substrate to ultraviolet light. The method further includes raising a plurality of lift pins disposed in the substrate support to a first height to lift the substrate off of the substrate support after the discharging of the residual charge.

The present invention relates to a tape sticking system for sticking a protective tape for protecting a peripheral portion of a substrate, such as a wafer. The tape sticking apparatus (10) includes a substrate holder (21) for sticking, a side roller (43), a first roller (46), a second roller (47), a roller-driving motor (49) coupled to the second roller (47), and a nipping mechanism (60) for nipping the peripheral portion of the substrate (W) with the first roller (46) and the second roller (47). The tape sticking apparatus (10) is configured to cause the second roller (47) to be rotated by use of the roller-driving motor (49) while nipping the peripheral portion of the substrate, held to the substrate holder (21) for sticking, with the first roller (46) and the second roller (47), to thereby rotate the substrate.

A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.

A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.

A cutting apparatus for dividing a wafer that is stuck to an adhesive tape in which the adhesive layer is cured by ultraviolet light and that is supported by an annular frame through the adhesive tape, into individual chips, includes: a holding unit having a frame support section that supports the annular frame, and a wafer table that is formed of a transparent body and supports the wafer; a cutting unit including, in a rotatable manner, a cutting blade for cutting the wafer; and an ultraviolet light applying unit that applies ultraviolet light, the ultraviolet light applying unit being disposed facing the cutting blade in such a manner that the wafer table is interposed therebetween. The ultraviolet light applying unit applies ultraviolet light to a region where the wafer is to be cut by the cutting blade, to form a cured region where the adhesive layer is cured.

Embodiments of the present disclosure relate to reflective silver for chamber components in substrate processing, and related processing chambers and methods. The reflective silver can be used for a variety of processing operations. As an example, the reflective silver can be used in RTP chambers and/or epitaxial deposition chambers. In one or more embodiments, a processing chamber includes one or more walls at least partially defining a chamber volume, one or more substrate supports disposed in the chamber volume, and one or more heat sources operable to heat the chamber volume. The processing chamber includes a reflector oriented to reflect energy toward the chamber volume. At least a section of the reflector includes an opaque material at least partially coated with a reflective material. The opaque material includes silicon carbide (SiC).