The present disclosure generally describes a method and system for converting power to operate a load being supplied by line power having a line energy. The method includes rectifying the line power, bucking the rectified line power to generate a desired voltage output such that current is drawn from the line power in phase with the desired voltage output, and bypassing switching energy created during the bucking of the rectified line power.

A substrate processing apparatus including a chamber, a substrate support platform provided inside the chamber, a lamp disposed at an upper portion of the chamber, and emitting light to an inside of the chamber, and a plate interposed between the lamp and the substrate support platform in the chamber, and including a plurality of holes through which the light, when emitted by the lamp, passes, wherein a surface of the substrate support platform is positioned to be irradiated with the light, and wherein for at least a first hole of the plurality of holes, a diameter of the hole becomes greater in a direction going downward from a top surface of the plate toward a bottom surface of the plate.

The present invention relates to a heater block capable of precise control of a heating temperature and a substrate device including the heater block. The heater block may include: a first laser module having multiple laser cells; a second laser module which has multiple laser cells and is provided around the first laser module; and a first and a second power source part for independently supplying power to the first laser module and the second laser module, respectively, wherein, at least one among the first laser module and the second laser module is divided into multiple control areas each of which includes the one or more laser cells sharing an input terminal to which power is input, and the multiple control areas are controlled independently from each other.

A method of etching a thin film includes: a first puddling operation of forming a first puddle of a chemical solution on a substrate by supplying and spreading the chemical solution on the substrate on which a thin film is formed; a first etching operation of partially etching the thin film using the chemical solution on the substrate; a first rinsing operation of supplying the chemical solution onto the substrate to rinse off the first puddle of the chemical solution and apply the chemical solution onto the substrate; a second puddling operation of forming a second puddle of the chemical solution on the substrate; a second etching operation of partially etching the thin film; and a second rinsing operation of supplying the chemical solution onto the substrate to rinse off the second puddle of the chemical solution on the substrate and apply the chemical solution on to the substrate.

An abnormality detection device for detecting a treatment abnormality in a semiconductor wafer to be heat-treated in a heat treatment apparatus is provided. The abnormality detection device includes a lower radiation thermometer for measuring a temperature of the semiconductor wafer being heat-treated, a treatment information acquisition part (sensors) for acquiring a plurality of pieces of treatment information having a correlation with the temperature measured by the lower radiation thermometer, and a detection part for dividing heat treatment of the semiconductor wafer into a plurality of phases (heat treatment phases F1 to F7) to detect a treatment abnormality in the semiconductor wafer, based on a plurality of learning models created for the respective phases (heat treatment phases F1 to F7), based on the temperature and the treatment information.

A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

A laser processing device for forming an opening in an insulating layer of a wiring substrate includes a light source that emits a laser beam, an objective lens that focuses the laser beam onto a surface of a wiring substrate, a control device including circuitry that control irradiation of the laser beam, and a sensor that outputs to the control device a sensor output based on plasma light emitted from the wiring substrate irradiated with the laser beam. The circuitry of the control device calculates an integrated value from start of processing at one processing position for the sensor output corresponding to each of irradiations of the laser beam at the one processing position on the wiring substrate and terminates formation of the opening at the one processing position when the integrated value satisfies a predetermined condition.

A laser processing device for forming an opening in an insulating layer of a wiring substrate includes a light source that emits a laser beam, an objective lens that focuses the laser beam onto a surface of a wiring substrate, a control device including circuitry that controls an irradiation condition of the laser beam, and a sensor that outputs to the control device a sensor output based on plasma light emitted from the wiring substrate due to irradiation of the laser beam. The circuitry of the control device recognizes a change in an irradiation site of the laser beam based on the sensor output, reduces processing capability of the laser beam and continues the irradiation upon.

A substrate support device relating to technology disclosed in the description of the present application includes: a holding plate for opposing a substrate bowable by being heated by irradiation with flash light; and a plurality of substrate support pins provided on the holding plate and being for supporting the substrate, wherein the plurality of substrate support pins are arranged at locations where a volume of a space between the holding plate and the substrate in an unbowed state and a volume of a space between the holding plate and the substrate in a bowed state are equal to each other. Breakage of the substrate can be suppressed in a case where the substrate is bowed by flash light.

A system for processing a product includes a tool that processes the product and a rotor assembly including a rotor supporting the product and a stator with actuator(s) exerting torque on the rotor. A tool controller operates the tool and transmits speed request signals including a desired speed of the rotor and a control pulse having a threshold value repeating at the expiration of a period proportional to a desired rotation period of the rotor at the desired speed. A rotor controller receives both the speed request signal and the control pulse, controls the stator actuator(s) such that the rotor rotates at the desired speed and phase, and transmits a rotor position pulse and/or phase information to the tool controller once every predetermined angular displacement of the rotor. The tool controller operates the tool based on the angular position of the rotor as calculated using information from the rotor controller.