A method includes bonding an integrated circuit die to a carrier substrate, forming a gap-filling dielectric around the integrated circuit die and along the edge of the carrier substrate, performing a bevel clean process to remove portions of the gap-filling dielectric from the edge of the carrier substrate, after performing the bevel clean process, depositing a first bonding layer on the gap-filling dielectric and the integrated circuit die, forming a first dielectric layer on an outer sidewall of the first bonding layer, an outer sidewall of the gap-filling dielectric, and the first outer sidewall of the carrier substrate; and bonding a wafer to the first dielectric layer and the first bonding layer, wherein the wafer comprises a semiconductor substrate and a second dielectric layer on an outer sidewall of the semiconductor substrate.

Methods, apparatuses, and systems related to a memory controller on an interface die and outside of a processor are described. Operations of the memory controller may be further facilitated by a circuit interface fabric configured to utilize separate write and read data buses within the interface die.

An electronic device, includes (a) a semiconductor substrate, (b) a plurality of transistors formed on a first side of the semiconductor substrate, and (c) a first set of metal interconnect layers formed on the first side of the semiconductor substrate, and a second set of metal interconnect layers formed on a second side of the semiconductor substrate opposite to the first side, each of the first set and the second set of metal interconnect layers includes (i) one or more layers whose electrical resistance is in a first range of resistances, and (ii) at least one layer whose electrical resistance is in a second range of resistances, lower than the first range.

A semiconductor structure and method for manufacturing thereof are provided. The semiconductor structure includes a silicon substrate having a first surface, a III-V layer on the first surface of the silicon substrate and over a first active region, and an isolation region in a portion of the III-V layer extended beyond the first active region. The first active region is in proximal to the first surface. The method includes the following operations. A silicon substrate having a first device region and a second device region is provided, a first active region is defined in the first device region, a III-V layer is formed on the silicon substrate, an isolation region is defined across a material interface in the III-V layer by an implantation operation, and an interconnect penetrating through the isolation region is formed.

A package structure includes a first dielectric layer disposed on a first patterned circuit layer, a first conductive via in the first dielectric layer and electrically connected to the first patterned circuit layer, a circuit layer on the first dielectric layer, a second dielectric layer on the first dielectric layer and covering the circuit layer, a second patterned circuit layer on the second dielectric layer and including conductive features, a chip on the conductive features, and a molding layer disposed on the second dielectric layer and encapsulating the chip. The circuit layer includes a plurality of portions separated from each other and including a first portion and a second portion. The number of pads corresponding to the first portion is different from that of pads corresponding to the second portion. An orthographic projection of each portion overlaps orthographic projections of at least two of the conductive features.

A semiconductor arrangement and method of forming the semiconductor arrangement are provided. The semiconductor arrangement includes a device having a first surface and a second surface opposite the first surface. A first through substrate via (TSV) structure extends between the first surface and the second surface in a first region of the device. A second TSV structure extends between the first surface and the second surface in a second region of the device. The first TSV structure has a first cross-sectional area. The second TSV structure has a second cross-sectional area greater than the first cross-sectional area.

Integrated circuit structures having deep via structures, and methods of fabricating integrated circuit structures having deep via structures, are described. For example, an integrated circuit structure includes a plurality of horizontally stacked nanowires. A gate structure is over the plurality of horizontally stacked nanowires. An epitaxial source or drain structure is at an end of the plurality of horizontally stacked nanowires. A conductive trench contact structure is vertically over the epitaxial source or drain structure. A conductive via is vertically beneath and extends into the conductive trench contact structure. The conductive via has a first width beneath the epitaxial source or drain structure less than a second width laterally adjacent to the epitaxial source or drain structure.

A method of manufacturing a semiconductor package includes: forming through-vias extending from a front side of a semiconductor substrate into the substrate; forming, on the front side of the semiconductor substrate, a circuit structure including a wiring structure electrically connected to the through-vias; removing a portion of the semiconductor substrate so that at least a portion of each of the through-vias protrudes to a rear side of the semiconductor substrate; forming a passivation layer covering the protruding portion of each of the through-vias; forming trenches recessed along a periphery of a corresponding one of the through-vias; removing a portion of the passivation layer so that one end of each of the through-vias is exposed to the upper surface of the passivation layer; and forming backside pads including a dam structure in each of the trenches, the dam structure being spaced apart from the corresponding one of the through-vias.

Disclosed is a stacked electronic device including a first and second bonded structure. The first bonded structure includes a first and second semiconductor element, each having a semiconductor region, a front side on one side of the semiconductor region including active circuitry, and a back side opposite the front side. The front side of the first semiconductor element is bonded and electrically connected to the front side of the second semiconductor element. The second bonded structure includes a third and fourth semiconductor element, which can include similar components to the first and second semiconductor elements. The front side of the third semiconductor element is bonded and electrically connected to the front side of the fourth semiconductor element. The back side of the second semiconductor element is bonded and electrically connected to the back side of the third semiconductor element.

A semiconductor device is provided. The semiconductor device includes: a first substrate; an active pattern extending on the first substrate; a gate electrode extending on the active pattern; a source/drain region on the active pattern; a first interlayer insulating layer on the source/drain region; a sacrificial layer on the first substrate; a lower wiring layer on a lower surface of the sacrificial layer; a through via trench extending to the lower wiring layer by passing through the first interlayer insulating layer and the sacrificial layer in a vertical direction; a through via inside the through via trench and connected to the lower wiring layer; a recess inside the sacrificial layer and protruding from a sidewall of the through via trench in the second horizontal direction; and a through via insulating layer extending along the sidewall of the through via trench and into the recess.