Methods of fabricating a 3D semiconductor device including: forming a first level including a first single crystal layer and first transistors, includes a single crystal channel; forming a first metal layer in the first level and a second metal layer overlaying the first metal layer; forming memory control circuits in the first level; forming a second level including second transistors, where at least one of the second transistors includes a metal gate; forming a third level including third transistors; forming a fourth level including fourth transistors, where the second level includes first memory cells, where the fourth level includes second memory cells, where the memory control circuits include control of data written into the first memory cells and into the second memory cells, where at least one of the transistors includes a hafnium oxide gate dielectric.

Methods of forming an integrated circuit devices may include providing first and second active regions, an isolation layer, and first and second sacrificial stack structures. The first and second sacrificial stack structures may contact the first and second active regions, and the first and second sacrificial stack structures may each include a channel layer and a sacrificial layer. The methods may also include forming an etch stop layer on the isolation layer, replacing portions of the first and second sacrificial stack structures with first and second source/drain regions, forming a front contact including a front contact plug, forming a back-side insulator, and forming a back contact plug in the isolation layer and the back-side insulator. At least one of a portion of the front contact plug and a portion of the back contact plug may be in the etch stop layer.

A bonded structure is provided. The bonded structure includes a first stack structure on a substrate, a second stack structure over the first stack structure, and a bonding interface between the first stack structure and the second stack structure. The second stack includes a via structure extending in the second stack structure and towards the bonding interface, the via structure having a first width closer to the bonding interface and a second width further away from the bonding interface. The first width is greater than the second width.

What is disclosed is structures and methods of integrating micro devices into system substrate. Further, the disclosure, also relates to methods and structures for enhancing the bonding process of micro-devices into a substrate. More specifically, it relates to expanding the micro device area or bonding area of micro devices.

A semiconductor package is provided. The semiconductor package includes a first semiconductor substrate, a first semiconductor element layer on an upper surface of the first semiconductor substrate, a first wiring structure on the first semiconductor element layer, a first connecting pad connected to the first wiring structure, a first test pad connected to the first wiring structure, a first front side bonding pad connected to the first connecting pad and including copper (Cu), and a second front side bonding pad connected to the first front side bonding pad and including copper (Cu) which has a nanotwin crystal structure different from a crystal structure of copper (Cu) included in the first front side bonding pad, wherein a width of the first front side bonding pad in the horizontal direction is different from a width of the second front side bonding pad in the horizontal direction.

An electronic device includes a substrate and a semiconductor die having conductive terminals along a first side, and a conductive shield with electrically and/or thermally conductive material that extends through the semiconductor die from the first side to an opposite second side, the conductive terminals coupled to respective conductive features of the substrate. A method includes forming via openings extending from a first side of a wafer to an opposite second side, forming a conductive shield that extends in the via openings and covers a portion of the second side of the wafer, and forming conductive terminals along the first side of the wafer.

A device comprising a memory device comprising: a first memory chip; a second memory chip coupled to the first memory chip, wherein a front side of the first memory chip is coupled to a front side of the second memory chip; a third memory chip coupled to the second memory chip, wherein a back side of the second memory chip is coupled to a back side of the third memory chip through fusion bonding; and a fourth memory chip coupled to the third memory chip, wherein a front side of the third memory chip is coupled to a front side of the fourth memory chip.

A semiconductor device including a first source/drain region (S/D) located on a frontside of a substrate, wherein the first source/drain region has a first width, a second S/D region located on the frontside of the substrate, wherein the second source/drain region is located above the first source drain region, wherein the second source/drain region has second width, wherein the first width is larger than the second width, a first power rail located on a backside of the substrate, a second power rail located on the backside of the substrate, a first connector in contact with the first source/drain region, wherein the first connector is only in contact with a sidewall of the first source/drain region, and a second connector in contact with the second source/drain region, wherein the second connector is in contact with a top surface and a side surface of the second source/drain region.

A method includes forming a semiconductive sheet over a front-side of a semiconductive region that is on a front-side of a substrate; forming semiconductive layers on the front-side of the semiconductive region and at either side of the semiconductive sheet; forming source/drain structures over the semiconductive layers and on the either side of the semiconductive sheet; forming a gate structure wrapping around the semiconductive sheet; performing a planarization process on a back-side of the substrate to expose the semiconductive region; etching the semiconductive region from a back-side of the semiconductive region to form a first opening exposing a first one of the semiconductive layers, while remains covering a second one of the semiconductive layers; selectively removing the first one of the semiconductive layers through the first opening to form a second opening; forming a contact in the first and second openings.

A system-in-package includes an interposer substrate having a first side and a second side opposite the first side, and a redistribution layer disposed on the first side. The redistribution layer includes a plurality of contact pads and a plurality of interconnections disposed on the first side. The plurality of interconnections is electrically connected to a plurality of terminals disposed on the second side opposite the first side. A first semiconductor die is disposed on the first side and electrically coupled to a first of the plurality of contact pads and a first of the plurality of interconnections disposed on the first side of the interposer substrate. A second semiconductor die is disposed on the first side. The second semiconductor die is electrically coupled to a second of the plurality of contact pads and a second of the plurality of interconnections disposed on the first side of the interposer substrate.